Run-Wei Li
Run-Wei Li
Ningbo Institute of industrial Technology
Verified email at nimte.ac.cn
Title
Cited by
Cited by
Year
Sub-10 nm Fe3O4@Cu2–xS Core–Shell Nanoparticles for Dual-Modal Imaging and Photothermal Therapy
Q Tian, J Hu, Y Zhu, R Zou, Z Chen, S Yang, R Li, Q Su, Y Han, X Liu
Journal of the American Chemical Society 135 (23), 8571-8577, 2013
5292013
Recommended methods to study resistive switching devices
M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
2902019
Nonvolatile resistive switching in graphene oxide thin films
CL He, F Zhuge, XF Zhou, M Li, GC Zhou, YW Liu, JZ Wang, B Chen, ...
Applied Physics Letters 95 (23), 232101, 2009
2402009
Observation of conductance quantization in oxide‐based resistive switching memory
X Zhu, W Su, Y Liu, B Hu, L Pan, W Lu, J Zhang, RW Li
Advanced Materials 24 (29), 3941-3946, 2012
2102012
Effect of top electrodes on photovoltaic properties of polycrystalline BiFeO3 based thin film capacitors
B Chen, M Li, Y Liu, Z Zuo, F Zhuge, QF Zhan, RW Li
Nanotechnology 22 (19), 195201, 2011
1722011
Edge-mediated skyrmion chain and its collective dynamics in a confined geometry
H Du, R Che, L Kong, X Zhao, C Jin, C Wang, J Yang, W Ning, R Li, C Jin, ...
Nature communications 6 (1), 1-7, 2015
1712015
Organic and hybrid resistive switching materials and devices
S Gao, X Yi, J Shang, G Liu, RW Li
Chemical Society Reviews 48 (6), 1531-1565, 2019
1612019
Polymer memristor for information storage and neuromorphic applications
Y Chen, G Liu, C Wang, W Zhang, RW Li, L Wang
Materials Horizons 1 (5), 489-506, 2014
1602014
Nonvolatile resistive switching memory based on amorphous carbon
F Zhuge, W Dai, CL He, AY Wang, YW Liu, M Li, YH Wu, P Cui, RW Li
Applied Physics Letters 96 (16), 163505, 2010
1602010
Resistance switching in polycrystalline thin films
K Yin, M Li, Y Liu, C He, F Zhuge, B Chen, W Lu, X Pan, RW Li
Applied Physics Letters 97 (4), 042101, 2010
1582010
Pushing Extended p-Quinodimethanes to the Limit: Stable Tetracyano-oligo(N-annulated perylene)quinodimethanes with Tunable Ground States
Z Zeng, M Ishida, JL Zafra, X Zhu, YM Sung, N Bao, RD Webster, BS Lee, ...
Journal of the American Chemical Society 135 (16), 6363-6371, 2013
1492013
Dibenzoheptazethrene isomers with different biradical characters: an exercise of Clar’s aromatic sextet rule in singlet biradicaloids
Z Sun, S Lee, KH Park, X Zhu, W Zhang, B Zheng, P Hu, Z Zeng, S Das, ...
Journal of the American Chemical Society 135 (48), 18229-18236, 2013
1462013
Thermally stable transparent resistive random access memory based on all‐oxide heterostructures
J Shang, G Liu, H Yang, X Zhu, X Chen, H Tan, B Hu, L Pan, W Xue, ...
Advanced Functional Materials 24 (15), 2171-2179, 2014
1422014
Mechanism of nonvolatile resistive switching in graphene oxide thin films
F Zhuge, B Hu, C He, X Zhou, Z Liu, RW Li
Carbon 49 (12), 3796-3802, 2011
1412011
A multilevel memory based on proton-doped polyazomethine with an excellent uniformity in resistive switching
B Hu, X Zhu, X Chen, L Pan, S Peng, Y Wu, J Shang, G Liu, Q Yan, RW Li
Journal of the American Chemical Society 134 (42), 17408-17411, 2012
1352012
Mechanism for resistive switching in an oxide-based electrochemical metallization memory
S Peng, F Zhuge, X Chen, X Zhu, B Hu, L Pan, B Chen, RW Li
Applied Physics Letters 100 (7), 072101, 2012
1322012
Organic biomimicking memristor for information storage and processing applications
G Liu, C Wang, W Zhang, L Pan, C Zhang, X Yang, F Fan, Y Chen, RW Li
Advanced Electronic Materials 2 (2), 1500298, 2016
1312016
An optoelectronic resistive switching memory with integrated demodulating and arithmetic functions
H Tan, G Liu, X Zhu, H Yang, B Chen, X Chen, J Shang, WD Lu, Y Wu, ...
Advanced Materials 27 (17), 2797-2803, 2015
1252015
An oxide Schottky junction artificial optoelectronic synapse
S Gao, G Liu, H Yang, C Hu, Q Chen, G Gong, W Xue, X Yi, J Shang, ...
ACS nano 13 (2), 2634-2642, 2019
1202019
Nonvolatile resistive switching in metal/La-doped BiFeO3/Pt sandwiches
M Li, F Zhuge, X Zhu, K Yin, J Wang, Y Liu, C He, B Chen, RW Li
Nanotechnology 21 (42), 425202, 2010
1162010
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