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Felix Julian Schupp
Felix Julian Schupp
IBM Research
Bestätigte E-Mail-Adresse bei zurich.ibm.com
Titel
Zitiert von
Zitiert von
Jahr
Shuttling a single charge across a one-dimensional array of silicon quantum dots
AR Mills, DM Zajac, MJ Gullans, FJ Schupp, TM Hazard, JR Petta
Nature communications 10 (1), 1063, 2019
2452019
A coherent nanomechanical oscillator driven by single-electron tunnelling
Y Wen, N Ares, FJ Schupp, T Pei, GAD Briggs, EA Laird
Nature physics 16 (1), 75-82, 2020
722020
Sensitive radio-frequency measurements of a quantum dot by tuning to perfect impedance matching
N Ares, FJ Schupp, A Mavalankar, G Rogers, J Griffiths, GAC Jones, ...
Physical Review Applied 5 (3), 034011, 2016
682016
One dimensional transport in silicon nanowire junction-less field effect transistors
MM Mirza, FJ Schupp, JA Mol, DA MacLaren, GAD Briggs, DJ Paul
Scientific reports 7 (1), 3004, 2017
442017
Secondary electron interference from trigonal warping in clean carbon nanotubes
A Dirnaichner, M Del Valle, KJG Götz, FJ Schupp, N Paradiso, M Grifoni, ...
Physical review letters 117 (16), 166804, 2016
252016
Nanomechanical characterization of the Kondo charge dynamics in a carbon nanotube
KJG Götz, DR Schmid, FJ Schupp, PL Stiller, C Strunk, AK Hüttel
Physical review letters 120 (24), 246802, 2018
242018
Sensitive radiofrequency readout of quantum dots using an ultra-low-noise SQUID amplifier
FJ Schupp, F Vigneau, Y Wen, A Mavalankar, J Griffiths, GAC Jones, ...
Journal of Applied Physics 127 (24), 2020
232020
Sweet-spot operation of a germanium hole spin qubit with highly anisotropic noise sensitivity
NW Hendrickx, L Massai, M Mergenthaler, F Schupp, S Paredes, ...
arXiv preprint arXiv:2305.13150, 2023
172023
Single-electron devices in silicon
FJ Schupp
Materials Science and Technology 33 (8), 944-962, 2017
152017
Anisotropic etching of graphene in inert and oxygen atmospheres
F Oberhuber, S Blien, F Schupp, D Weiss, J Eroms
physica status solidi (a) 214 (2), 1600459, 2017
142017
Impact of interface traps on charge noise, mobility and percolation density in Ge/SiGe heterostructures
L Massai, B Hetényi, M Mergenthaler, FJ Schupp, L Sommer, S Paredes, ...
arXiv preprint arXiv:2310.05902, 2023
82023
Quantum interference in silicon one-dimensional junctionless nanowire field-effect transistors
FJ Schupp, MM Mirza, DA MacLaren, GAD Briggs, DJ Paul, JA Mol
Physical Review B 98 (23), 235428, 2018
52018
Carbon nanotube millikelvin transport and nanomechanics
KJG Götz, FJ Schupp, AK Hüttel
physica status solidi (b) 256 (6), 1800517, 2019
42019
Nanomanipulation an Graphen
F Schupp
22011
Spin Qubits in Silicon FinFET Devices
A Fuhrer, M Aldeghi, T Berger, LC Camenzind, RS Eggli, S Geyer, ...
2022 International Electron Devices Meeting (IEDM), 14.1. 1-14.1. 4, 2022
12022
Novel contact materials for carbon-nanotube nano-electromechanical resonators
F Schupp
12014
Fast cryogenic probing of quantum dot spin qubit devices
A Kuhlmann, S Geyer, M de Kruijf, F Schupp, S Paredes, M Mergenthaler, ...
Bulletin of the American Physical Society, 2024
2024
Capacitive crosstalk in gate-based dispersive sensing of spin qubits
EG Kelly, A Orekhov, NW Hendrickx, M Mergenthaler, FJ Schupp, ...
Applied Physics Letters 123 (26), 2023
2023
Towards Si finFET quantum devices with reproducible behavior
M Mergenthaler, F Schupp, N Vico-Trivino, K Tsoukalas, L Sommer, ...
APS March Meeting Abstracts 2023, W74. 005, 2023
2023
Radio-frequency characterization of a supercurrent transistor made of a carbon nanotube
M Mergenthaler, FJ Schupp, A Nersisyan, N Ares, A Baumgartner, ...
Materials for Quantum Technology 1 (3), 035003, 2021
2021
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