| Fabrication, characterization, and physics of III–V heterojunction tunneling field effect transistors (H-TFET) for steep sub-threshold swing G Dewey, B Chu-Kung, J Boardman, JM Fastenau, J Kavalieros, R Kotlyar, ... 2011 International electron devices meeting, 33.6. 1-33.6. 4, 2011 | 446 | 2011 |
| 3D heterogeneous integration of high performance high-K metal gate GaN NMOS and Si PMOS transistors on 300mm high-resistivity Si substrate for energy-efficient and compact … HW Then, S Dasgupta, M Radosavljevic, P Agababov, I Ban, R Bristol, ... 2019 IEEE International Electron Devices Meeting (IEDM), 17.3. 1-17.3. 4, 2019 | 210 | 2019 |
| Electrostatics improvement in 3-D tri-gate over ultra-thin body planar InGaAs quantum well field effect transistors with high-K gate dielectric and scaled gate-to-drain/gate-to … M Radosavljevic, G Dewey, D Basu, J Boardman, B Chu-Kung, ... 2011 international electron devices meeting, 33.1. 1-33.1. 4, 2011 | 196 | 2011 |
| High mobility strained germanium quantum well field effect transistor as the p-channel device option for low power (Vcc= 0.5 V) III–V CMOS architecture R Pillarisetty, B Chu-Kung, S Corcoran, G Dewey, J Kavalieros, H Kennel, ... 2010 International Electron Devices Meeting, 6.7. 1-6.7. 4, 2010 | 172 | 2010 |
| Charge control analysis of transistor laser operation M Feng, N Holonyak, HW Then, G Walter Applied physics letters 91 (5), 2007 | 125 | 2007 |
| P-channel GaN transistor based on p-GaN/AlGaN/GaN on Si N Chowdhury, J Lemettinen, Q Xie, Y Zhang, NS Rajput, P Xiang, ... IEEE Electron Device Letters 40 (7), 1036-1039, 2019 | 121 | 2019 |
| Regrowth-free GaN-based complementary logic on a Si substrate N Chowdhury, Q Xie, M Yuan, K Cheng, HW Then, T Palacios IEEE Electron Device Letters 41 (6), 820-823, 2020 | 114 | 2020 |
| Non-planar III-V field effect transistors with conformal metal gate electrode and nitrogen doping of gate dielectric interface G Dewey, RS Chau, M Radosavljevic, HW Then, SB Clendenning, ... US Patent 8,890,264, 2014 | 111 | 2014 |
| Trench confined epitaxially grown device layer (s) R Pillarisetty, SH Sung, N Goel, JT Kavalieros, S Dasgupta, VH Le, ... US Patent 8,765,563, 2014 | 110 | 2014 |
| Prospects for wide bandgap and ultrawide bandgap CMOS devices SJ Bader, H Lee, R Chaudhuri, S Huang, A Hickman, A Molnar, HG Xing, ... IEEE Transactions on Electron Devices 67 (10), 4010-4020, 2020 | 109 | 2020 |
| Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operation S Dasgupta, HW Then, M Radosavljevic, N Mukherjee, N Goel, S Kabehie, ... US Patent 9,099,490, 2015 | 100 | 2015 |
| Resonance-free frequency response of a semiconductor laser M Feng, HW Then, N Holonyak, G Walter, A James Applied Physics Letters 95 (3), 2009 | 93 | 2009 |
| Gate-recessed E-mode p-channel HFET with high on-current based on GaN/AlN 2D hole gas SJ Bader, R Chaudhuri, K Nomoto, A Hickman, Z Chen, HW Then, ... IEEE Electron Device Letters 39 (12), 1848-1851, 2018 | 88 | 2018 |
| 4.3 GHz optical bandwidth light emitting transistor G Walter, CH Wu, HW Then, M Feng, N Holonyak Applied Physics Letters 94 (24), 2009 | 74 | 2009 |
| Tilted-charge high speed (7 GHz) light emitting diode G Walter, CH Wu, HW Then, M Feng, N Holonyak Applied Physics Letters 94 (23), 2009 | 73 | 2009 |
| High voltage field effect transistors HW Then, R Chau, B Chu-Kung, G Dewey, J Kavalieros, M Metz, ... US Patent 9,245,989, 2016 | 71 | 2016 |
| Tunnel junction transistor laser M Feng, N Holonyak, HW Then, CH Wu, G Walter Applied Physics Letters 94 (4), 2009 | 63 | 2009 |
| The transistor laser: Theory and experiment HW Then, M Feng, N Holonyak Proceedings of the IEEE 101 (10), 2271-2298, 2013 | 61 | 2013 |
| Microwave circuit model of the three-port transistor laser HW Then, M Feng, N Holonyak Journal of Applied Physics 107 (9), 2010 | 59 | 2010 |
| Experimental Observation and Physics of “Negative” Capacitance and Steeper than 40mV/decade Subthreshold HW Then, S Dasgupta, M Radosavljevic, L Chow, B Chu-Kung, G Dewey, ... Electron Devices Meeting (IEDM), 2013 IEEE International, 28.3. 1-28.3. 4, 2013 | 57* | 2013 |
Marko RadosavljevicIntel CorporationVerified email at intel.com
