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Nazareno Donato
Nazareno Donato
University of Cambridge, Cambridge Microelectronics Ltd.
Verified email at cam.ac.uk
Title
Cited by
Cited by
Year
Diamond power devices: state of the art, modelling, figures of merit and future perspective
N Donato, N Rouger, J Pernot, G Longobardi, F Udrea
Journal of Physics D: Applied Physics 53 (9), 093001, 2019
1692019
Static and dynamic effects of the incomplete ionization in superjunction devices
N Donato, F Udrea
IEEE Transactions on Electron Devices 65 (10), 4469-4475, 2018
232018
Gate oxide electrical stability of p-type diamond MOS capacitors
O Loto, M Florentin, C Masante, N Donato, ML Hicks, AC Pakpour-Tabrizi, ...
IEEE Transactions on Electron Devices 65 (8), 3361-3364, 2018
192018
Design of a normally-off diamond JFET for high power integrated applications
N Donato, D Pagnano, E Napoli, G Longobardi, F Udrea
Diamond and Related Materials 78, 73-82, 2017
162017
On the models used for TCAD simulations of Diamond Schottky Barrier Diodes
N Donato, M Antoniou, E Napoli, G Amaratunga, F Udrea
2015 International Semiconductor Conference (CAS), 223-226, 2015
112015
An advanced physical model for the Coulombic scattering mobility in 4H-SiC inversion layers
K Naydenov, N Donato, F Udrea
Journal of Applied Physics 127 (19), 2020
72020
Single and repetitive surge current events of 3.3 kV-20 a 4H-SiC JBS rectifiers: The impact of the anode layout
N Donato, F Udrea, A Mihaila, L Knoll, G Romano, L Kranz, M Antoniou
2020 32nd International Symposium on Power Semiconductor Devices and ICs …, 2020
62020
Effect of pillar ripple on static and dynamic trade-offs in superjunction MOSFETs
H Kang, N Donato, F Udrea
IEEE Electron Device Letters 41 (5), 753-756, 2020
52020
Modelling and design of diamond power semiconductor devices
N Donato
52019
Operation and performance of the 4H-SiC junctionless FinFET
K Naydenov, N Donato, F Udrea
Engineering Research Express 3 (3), 035008, 2021
42021
Analytic modeling of a hybrid power module based on diamond and SiC devices
M Couret, A Castelan, N Donato, F Udrea, J Pernot, N Rouger
Diamond and Related Materials 124, 108936, 2022
22022
6.2 Diamond devices in power converters: needs
N Rouger, N Donato, F Udrea
Power Electronics Device Applications of Diamond Semiconductors, 400-31, 2018
22018
On the Short Circuit Electro-Thermal Failure of 1.2 kV 4H-SiC MOSFETs with 3D Cell Layouts
N Donato, K Naydenov, F Udrea, A Mihaila, G Romano, S Wirths, L Knoll
Materials Science Forum 1062, 632-636, 2022
12022
Clamped and Unclamped Inductive Switching of 3.3 kV 4H-SiC MOSFETs with 3D Cellular Layouts
K Naydenov, N Donato, F Udrea, A Mihaila, G Romano, S Wirths, L Knoll
Materials Science Forum 1062, 627-631, 2022
12022
Optimisation of the carrier lifetime profile in 1.2 KV planar and trench SiC MOSFETs
K Naydenov, N Donato, F Udrea, A Mihaila, G Romano, S Wirths, L Knoll
2022 IEEE 34th International Symposium on Power Semiconductor Devices and …, 2022
12022
POWER SEMICONDUCTOR DEVICE
G Romano, A Mihaila, M Bellini, Y Arango, L Knoll, N Donato, F Udrea
EP Patent EP4123722A1, 2023
2023
The Effect of the Pillar Ripple on the Reverse Recovery in Superjunction MOSFETs
H Kang, N Donato, F Udrea
Power Electronic Devices and Components 2, 100009, 2022
2022
Surge current capability evaluation of 6.5 kV SiC MOSFETs with 3D cell layouts
K Naydenov, N Donato, F Udrea, A Mihaila, G Romano, S Wirths, L Knoll
2021 33rd International Symposium on Power Semiconductor Devices and ICs …, 2021
2021
Hybrid power module with Diamond and SiC power devices: modeling, performances and challenges
NC Rouger, A Castelan, I Nachete, N Donato, F Udrea, J Pernot
MRS Spring Meeting 2021, 2021
2021
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