Stefan Zollner
Title
Cited by
Cited by
Year
Optical critical points of thin-film alloys: A comparative study
VR D’costa, CS Cook, AG Birdwell, CL Littler, M Canonico, S Zollner, ...
Physical Review B 73 (12), 125207, 2006
3702006
Growth and strain compensation effects in the ternary Si1−xyGexCy alloy system
K Eberl, SS Iyer, S Zollner, JC Tsang, FK LeGoues
Applied physics letters 60 (24), 3033-3035, 1992
3601992
Ge–Sn semiconductors for band-gap and lattice engineering
M Bauer, J Taraci, J Tolle, AVG Chizmeshya, S Zollner, DJ Smith, ...
Applied physics letters 81 (16), 2992-2994, 2002
2812002
Temperature dependence of the dielectric function and the interband critical-point parameters of GaSb
S Zollner, M Garriga, J Humlek, S Gopalan, M Cardona
Physical Review B 43 (5), 4349, 1991
1651991
Microscopic theory of intervalley scattering in GaAs: k dependence of deformation potentials and scattering rates
S Zollner, S Gopalan, M Cardona
Journal of applied physics 68 (4), 1682-1693, 1990
1431990
Carrier concentration and lattice absorption in bulk and epitaxial silicon carbide determined using infrared ellipsometry
TE Tiwald, JA Woollam, S Zollner, J Christiansen, RB Gregory, ...
Physical Review B 60 (16), 11464, 1999
1401999
Model dielectric functions for native oxides on compound semiconductors
S Zollner
Applied physics letters 63 (18), 2523-2524, 1993
1381993
Isotope and temperature shifts of direct and indirect band gaps in diamond-type semiconductors
S Zollner, M Cardona, S Gopalan
Physical Review B 45 (7), 3376, 1992
1371992
Optical properties of bulk and thin-film on Si and Pt
S Zollner, AA Demkov, R Liu, PL Fejes, RB Gregory, P Alluri, JA Curless, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2000
1192000
Visible and ultraviolet Raman scattering studies of alloys
M Holtz, WM Duncan, S Zollner, R Liu
Journal of Applied Physics 88 (5), 2523-2528, 2000
1102000
Anneal of epitaxial layer in a semiconductor device
S Zollner, V Dhandapani, PA Grudowski, GS Spencer
US Patent 7,416,605, 2008
1072008
Optical and structural properties of alloys
P Aella, C Cook, J Tolle, S Zollner, AVG Chizmeshya, J Kouvetakis
Applied Physics Letters 84 (6), 888-890, 2004
962004
Intervalley deformation potentials and scattering rates in zinc blende semiconductors
S Zollner, S Gopalan, M Cardona
Applied physics letters 54 (7), 614-616, 1989
921989
Dielectric functions of bulk 4H and 6H SiC and spectroscopic ellipsometry studies of thin SiC films on Si
S Zollner, JG Chen, E Duda, T Wetteroth, SR Wilson, JN Hilfiker
Journal of applied physics 85 (12), 8353-8361, 1999
871999
Impact of titanium addition on film characteristics of gate dielectrics deposited by atomic layer deposition
DH Triyoso, RI Hegde, S Zollner, ME Ramon, S Kalpat, R Gregory, ...
Journal of applied physics 98 (5), 054104, 2005
842005
High-quality AlN grown on Si (111) by gas-source molecular-beam epitaxy with ammonia
SA Nikishin, VG Antipov, S Francoeur, NN Faleev, GA Seryogin, ...
Applied physics letters 75 (4), 484-486, 1999
821999
Conduction band-edge states associated with the removal of d-state degeneracies by the Jahn-Teller effect
G Lucovsky, CC Fulton, Y Zhang, Y Zou, J Luning, LF Edge, JL Whitten, ...
IEEE Transactions on Device and Materials Reliability 5 (1), 65-83, 2005
762005
Versatile buffer layer architectures based on alloys
R Roucka, J Tolle, C Cook, AVG Chizmeshya, J Kouvetakis, V D’Costa, ...
Applied Physics Letters 86 (19), 191912, 2005
672005
Optical constants and critical-point parameters of GaAs from 0.73 to 6.60 eV
S Zollner
Journal of Applied Physics 90 (1), 515-517, 2001
652001
The dielectric function of AlSb from 1.4 to 5.8 eV determined by spectroscopic ellipsometry
S Zollner, C Lin, E Schönherr, A Böhringer, M Cardona
Journal of applied physics 66 (1), 383-387, 1989
641989
The system can't perform the operation now. Try again later.
Articles 1–20