| The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment AB Renz, VA Shah, OJ Vavasour, Y Bonyadi, F Li, T Dai, GWC Baker, ... Journal of Applied Physics 127 (2), 2020 | 16 | 2020 |
| The improvement of atomic layer deposited SiO2/4H-SiC interfaces via a high temperature forming gas anneal AB Renz, OJ Vavasour, PM Gammon, F Li, T Dai, M Antoniou, GWC Baker, ... Materials Science in Semiconductor Processing 122, 105527, 2021 | 13 | 2021 |
| An investigation into the impact of surface passivation techniques using metal-semiconductor interfaces Y Bonyadi, PM Gammon, YK Sharma, GWC Baker, P Mawby Materials Science Forum 897, 443-446, 2017 | 8 | 2017 |
| The optimization of 3.3 kV 4H-SiC JBS diodes AB Renz, VA Shah, OJ Vavasour, GWC Baker, Y Bonyadi, Y Sharma, ... IEEE Transactions on Electron Devices 69 (1), 298-303, 2021 | 7 | 2021 |
| Optimization of 1700-V 4H-SiC superjunction Schottky rectifiers with implanted p-pillars for practical realization GWC Baker, C Chan, AB Renz, Y Qi, T Dai, F Li, VA Shah, PA Mawby, ... IEEE Transactions on Electron Devices 68 (7), 3497-3504, 2021 | 6 | 2021 |
| Development of high-quality gate oxide on 4H-SiC using atomic layer deposition AB Renz, OJ Vavasour, PM Gammon, F Li, TX Dai, S Esfahani, ... Materials Science Forum 1004, 547-553, 2020 | 6 | 2020 |
| Initial investigations into the MOS interface of freestanding 3C-SiC layers for device applications AB Renz, F Li, OJ Vavasour, PM Gammon, T Dai, GWC Baker, F La Via, ... Semiconductor Science and Technology 36 (5), 055006, 2021 | 5 | 2021 |
| Optimization of 1700-V 4H-SiC Semi-Superjunction Schottky Rectifiers With Implanted P-Pillars for Practical Realization GWC Baker, PM Gammon, AB Renz, O Vavasour, CW Chan, Y Qi, T Dai, ... IEEE Transactions on Electron Devices 69 (4), 1924-1930, 2022 | 4 | 2022 |
| Surface effects of passivation within Mo/4H-SiC Schottky diodes through MOS analysis AB Renz, V Shah, OJ Vavasour, Y Bonyadi, GWC Baker, F Li, TX Dai, ... Materials Science Forum 963, 511-515, 2019 | 3 | 2019 |
| 3.3 kV SiC JBS diodes employing a P2O5 surface passivation treatment to improve electrical characteristics AB Renz, OJ Vavasour, VA Shah, V Pathirana, T Trajkovic, Y Bonyadi, ... 2021 IEEE Energy Conversion Congress and Exposition (ECCE), 5283-5288, 2021 | 2 | 2021 |
| A Method to Contain the Temperature Rise of a Press-Pack Thyristor during a Short Circuit Protection Operation E Bashar, R Wu, L Ran, JO Gonzalez, AB Renz, G Baker, M Jennings, ... 2019 IEEE Energy Conversion Congress and Exposition (ECCE), 3311-3317, 2019 | 2 | 2019 |
| Study of 4H-SiC Superjunction Schottky rectifiers with implanted p-pillars GWC Baker, CW Chan, TX Dai, AB Renz, F Li, V Shah, P Mawby, ... Materials Science Forum 963, 539-543, 2019 | 2 | 2019 |
| Optimization of SiC device topologies for Single Event Immunity Y Qi, M Antoniou, GWC Baker, AB Renz, L Zhang, PM Gammon 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe …, 2022 | 1 | 2022 |
| Engineering the Schottky Interface of 3.3 kV SiC JBS Diodes Using a P2O5 Surface Passivation Treatment AB Renz, OJ Vavasour, A Pérez-Tomás, QZ Cao, V Shah, Y Bonyadi, ... Materials Science Forum 1062, 190-194, 2022 | 1 | 2022 |
| A Study of High Resistivity Semi-Insulating 4H-SiC Epilayers Formed via the Implantation of Germanium and Vanadium AB Renz, OJ Vavasour, M Rommel, GWC Baker, PM Gammon, TX Dai, ... Materials Science Forum 1062, 523-527, 2022 | 1 | 2022 |
| (Invited, Digital Presentation) Improved Reliability of 4H-SiC Metal-Oxide-Semiconductor Devices Utilising Atomic Layer Deposited Layers with Enhanced Interface Quality ABB Renz, OJ Vavasour, PM Gammon, F Li, T Dai, GWC Baker, NE Grant, ... ECS Transactions 108 (2), 43, 2022 | 1 | 2022 |
| High Mobility Silicon Dioxide Layers on 4H-SiC Deposited by Means of Atomic Layer Deposition AB Renz, QZ Cao, OJ Vavasour, J Gott, PM Gammon, TX Dai, GWC Baker, ... Materials Science Forum 1090, 147-151, 2023 | | 2023 |
| The successful implementation of a phosphorous-based surface passivation treatment into an industrial 650 V 4H-SiC JBS fabrication process AB Renz, GWC Baker, VA Shah, P Mawby, M Antoniou, PM Gammon 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe …, 2022 | | 2022 |
| The optimisation of a 15 kV 4H-silicon carbide integrated gate commutated thyristor Q Cao, PM Gammon, AB Renz, L Zhang, G Baker, M Antoniou, N Lophitis 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe …, 2022 | | 2022 |
| The Improved Reliability Performance of Post-Deposition Annealed ALD-SiO2 AB Renz, OJ Vavasour, PM Gammon, F Li, TX Dai, GWC Baker, N Grant, ... Materials Science Forum 1062, 325-329, 2022 | | 2022 |
