Luigi Colombo

Citée par

	Toutes	Depuis 2020
Citations	70020	22865
indice h	80	47
indice i10	216	100

6000

3000

1500

4500

20032004200520062007200820092010201120122013201420152016201720182019202020212022202320242025244 395 506 608 608 593 702 1215 2005 2622 3697 4392 5043 5944 5920 5910 5991 5367 5025 4598 3972 3636 266

Accès public

Tout afficher

21 articles

10 articles

disponibles

non disponibles

Sur la base des exigences liées au financement

Coauteurs

Rodney RuoffThe IBS CMCM, Dept. of Chemistry, Dept. of MS&ESchool of Energy and ChEng,Adresse e-mail validée de unist.ac.kr
Archana VenugopalTechnologist at Texas InstrumentsAdresse e-mail validée de ti.com
Robert M. WallaceUniversity of Texas at DallasAdresse e-mail validée de utdallas.edu
Antonio L P RotondaroTokyo Electron AmericaAdresse e-mail validée de us.tel.com
Emanuel TutucProfessor, The University of Texas at AustinAdresse e-mail validée de mer.utexas.edu
Xuesong LiUniversity of Electronic Science and Technology of ChinaAdresse e-mail validée de uestc.edu.cn
Seyoung KimPOSTECHAdresse e-mail validée de postech.ac.kr
Eric M VogelHightower Professor of Materials Science and Engineering, Georgia Institute of TechnologyAdresse e-mail validée de mse.gatech.edu
Jiyoung KimProfessor, Department of Materials Science and Engineering, University of Texas at DallasAdresse e-mail validée de utdallas.edu
Francesco BonaccorsoBeDimensional S.p.A., Istituto Italiano di TecnologiaAdresse e-mail validée de iit.it
Manuel Quevedo-lopezUniversity of Texas at DallasAdresse e-mail validée de utdallas.edu
Stephen McDonnellUniversity of VirginiaAdresse e-mail validée de virginia.edu
Junghyo NahProfessor, Dept. of Electrical Engineering, Chungnam National UniversityAdresse e-mail validée de cnu.ac.kr
Rafik AddouOregon State UniversityAdresse e-mail validée de oregonstate.edu
Yufeng HaoProfessor of Materials Science and Engineering, Nanjing UniversityAdresse e-mail validée de nju.edu.cn
Harry ChouUniversity of Texas at Austin, PulseForge, NovaCentrixAdresse e-mail validée de utexas.edu
Cheng GongAssociate Professor, University of MarylandAdresse e-mail validée de umd.edu
Babak FallahazadIntel CorporationAdresse e-mail validée de intel.com
Andrea C. FerrariProfessor of Nanotechnology, University of Cambridge, UKAdresse e-mail validée de eng.cam.ac.uk
"KS Novoselov" or "K Novoselov"University of ManchesterAdresse e-mail validée de manchester.ac.uk

Suivre

Luigi Colombo

University of Texas at Dallas

Adresse e-mail validée de utdallas.edu

Graphene devices 2D materials materials science


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
Large-area synthesis of high-quality and uniform graphene films on copper foils X Li, W Cai, J An, S Kim, J Nah, D Yang, R Piner, A Velamakanni, I Jung, ... science 324 (5932), 1312-1314, 2009	14118	2009
A roadmap for graphene KS Novoselov, L Colombo, PR Gellert, MG Schwab, K Kim nature 490 (7419), 192-200, 2012	10651	2012
Transfer of large-area graphene films for high-performance transparent conductive electrodes X Li, Y Zhu, W Cai, M Borysiak, B Han, D Chen, RD Piner, L Colombo, ... Nano letters 9 (12), 4359-4363, 2009	3881	2009
Graphene, related two-dimensional crystals, and hybrid systems for energy conversion and storage F Bonaccorso, L Colombo, G Yu, M Stoller, V Tozzini, AC Ferrari, ... Science 347 (6217), 1246501, 2015	3652	2015
Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems AC Ferrari, F Bonaccorso, V Fal'Ko, KS Novoselov, S Roche, P Bøggild, ... Nanoscale 7 (11), 4598-4810, 2015	3443	2015
Electronics based on two-dimensional materials G Fiori, F Bonaccorso, G Iannaccone, T Palacios, D Neumaier, ... Nature nanotechnology 9 (10), 768-779, 2014	3385	2014
Evolution of graphene growth on Ni and Cu by carbon isotope labeling X Li, W Cai, L Colombo, RS Ruoff Nano letters 9 (12), 4268-4272, 2009	2129	2009
Large-area graphene single crystals grown by low-pressure chemical vapor deposition of methane on copper X Li, CW Magnuson, A Venugopal, RM Tromp, JB Hannon, EM Vogel, ... Journal of the American Chemical Society 133 (9), 2816-2819, 2011	1638	2011
Production and processing of graphene and 2d crystals F Bonaccorso, A Lombardo, T Hasan, Z Sun, L Colombo, AC Ferrari Materials today 15 (12), 564-589, 2012	1392	2012
Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric S Kim, J Nah, I Jo, D Shahrjerdi, L Colombo, Z Yao, E Tutuc, SK Banerjee Applied Physics Letters 94 (6), 2009	1358	2009
Graphene films with large domain size by a two-step chemical vapor deposition process X Li, CW Magnuson, A Venugopal, J An, JW Suk, B Han, M Borysiak, ... Nano letters 10 (11), 4328-4334, 2010	1329	2010
The role of surface oxygen in the growth of large single-crystal graphene on copper Y Hao, MS Bharathi, L Wang, Y Liu, H Chen, S Nie, X Wang, H Chou, ... Science 342 (6159), 720-723, 2013	1307	2013
The effect of chemical residues on the physical and electrical properties of chemical vapor deposited graphene transferred to SiO2 A Pirkle, J Chan, A Venugopal, D Hinojos, CW Magnuson, S McDonnell, ... Applied Physics Letters 99 (12), 2011	1162	2011
Handbook of semiconductor manufacturing technology Y Nishi, R Doering CRC press, 2000	1086	2000
Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors C Gong, H Zhang, W Wang, L Colombo, RM Wallace, K Cho Applied Physics Letters 103 (5), 2013	932	2013
The Unusual Mechanism of Partial Fermi Level Pinning at Metal–MoS₂ Interfaces C Gong, L Colombo, RM Wallace, K Cho Nano letters 14 (4), 1714-1720, 2014	820	2014
Application of HfSiON as a gate dielectric material MR Visokay, JJ Chambers, ALP Rotondaro, A Shanware, L Colombo Applied Physics Letters 80 (17), 3183-3185, 2002	558	2002
Annealing of high-k dielectric materials ALP Rotondaro, MR Visokay, L Colombo US Patent 6,544,906, 2003	550	2003
Process for manufacturing dual work function metal gates in a microelectronics device L Colombo, JJ Chambers, MR Visokay US Patent 7,229,873, 2007	518	2007
Production and processing of graphene and related materials C Backes, AM Abdelkader, C Alonso, A Andrieux-Ledier, R Arenal, ... 2D Materials 7 (2), 022001, 2020	451	2020

Le système ne peut pas réaliser cette opération maintenant. Veuillez réessayer plus tard.

Articles 1–20

Nombre de citations par an

Citations en double

Citations fusionnées

Ajouter les coauteursCoauteurs

Suivre

Citée par

Coauteurs