Device reliability metric for end-of-life performance optimization based on circuit level assessment A Kerber, P Srinivasan, S Cimino, P Paliwoda, S Chandrashekhar, ... 2017 IEEE International Reliability Physics Symposium (IRPS), 2D-3.1-2D-3.5, 2017 | 32 | 2017 |
Effect of Stress-Induced Degradation in LDMOS Noise Characteristics MI Mahmud, Z Celik-Butler, P Hao, P Srinivasan, F Hou, BL Amey, ... IEEE electron device letters 33 (1), 107-109, 2011 | 20 | 2011 |
A Physics-Based Analytical 1/f Noise Model for RESURF LDMOS Transistors MI Mahmud, Z Çelik-Butler, P Hao, P Srinivasan, FC Hou, X Cheng, ... IEEE, 2013 | 14* | 2013 |
Variability of random telegraph noise in analog MOS transistors M Nour, MI Mahmud, Z Çelik-Butler, D Basu, S Tang, FC Hou, R Wise 2013 22nd International Conference on Noise and Fluctuations (ICNF), 1-4, 2013 | 11 | 2013 |
Investigation of degradation in advanced analog MOS technologies MI Mahmud Electrical Engineering, 2014 | 9 | 2014 |
Experimental analysis of DC and noise parameter degradation in n-channel reduced surface field (RESURF) LDMOS transistors MI Mahmud, Z Çelik-Butler, X Cheng, W Huang, P Hao, P Srinivasan, ... 2012 24th International Symposium on Power Semiconductor Devices and ICs …, 2012 | 5 | 2012 |
Low-frequency noise and stress-induced degradation in LDMOS MI Mahmud, Z Çelik-Butler, P Hao, F Hou, B Amey, T Khan, W Huang 2011 21st International Conference on Noise and Fluctuations, 352-355, 2011 | 5 | 2011 |
Reverse body bias dependence of HCI reliability in advanced FinFET MI Mahmud, R Ranjan, KD Lee, PR Perepa, CD Kwon, S Choo, K Choi 2022 IEEE International Reliability Physics Symposium (IRPS), P58-1-P58-4, 2022 | 4 | 2022 |
Determination of active oxide trap density and 1/f noise mechanism in RESURF LDMOS transistors Z Çelik-Butler, MI Mahmud, P Hao, F Hou, BL Amey, S Pendharkar Solid-State Electronics 111, 141-146, 2015 | 4 | 2015 |
Correlation of 1/ƒ noise and high-voltage-stress-induced degradation in LDMOS MI Mahmud, P Hao, P Srinivasan, F Hou, BL Amey, S Pendharkar, ... 2012 IEEE International Reliability Physics Symposium (IRPS), XT. 4.1-XT. 4.6, 2012 | 4 | 2012 |
Hot Carrier Reliability Improvement of Thicker Gate Oxide nFET Devices in Advanced FinFETs MI Mahmud, A Gupta, M Toledano-Luque, N Mavilla, J Johnson, ... 2019 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2019 | 3 | 2019 |
Systematic study of process impact on FinFET reliability R Ranjan, KD Lee, MI Mahmud, MS Rahman, PR Perepa, CB Larow, ... 2021 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2021 | 2 | 2021 |
Reliability-aware FinFET design M Toledano-Luque, P Srinivasan, P Paliwoda, S Cimino, Z Chbili, ... 2019 Electron Devices Technology and Manufacturing Conference (EDTM), 218-221, 2019 | 2 | 2019 |
Review of LDMOS time dependent degradation based on low-frequency noise modeling MI Mahmud, Z Çelik-Butler, P Hao, P Srinivasan, FC Hou 2013 22nd International Conference on Noise and Fluctuations (ICNF), 1-4, 2013 | | 2013 |