| Surface Phenomena During Plasma-Assisted Atomic Layer Etching of SiO2 RJ Gasvoda, AW van de Steeg, R Bhowmick, EA Hudson, S Agarwal ACS applied materials & interfaces 9 (36), 31067-31075, 2017 | 52 | 2017 |
| Etch selectivity during plasma-assisted etching of SiO2 and SiNx: Transitioning from reactive ion etching to atomic layer etching RJ Gasvoda, Z Zhang, S Wang, EA Hudson, S Agarwal Journal of Vacuum Science & Technology A 38 (5), 2020 | 40 | 2020 |
| Surface prefunctionalization of SiO2 to modify the etch per cycle during plasma-assisted atomic layer etching RJ Gasvoda, YGP Verstappen, S Wang, EA Hudson, S Agarwal Journal of Vacuum Science & Technology A 37 (5), 2019 | 24 | 2019 |
| Gas Phase Organic Functionalization of SiO2 with Propanoyl Chloride RJ Gasvoda, S Wang, DM Hausmann, EA Hudson, S Agarwal Langmuir 34 (48), 14489-14497, 2018 | 18 | 2018 |
| Mechanism for growth initiation on aminosilane-functionalized SiO2 during area-selective atomic layer deposition of ZrO2 W Xu, PC Lemaire, K Sharma, RJ Gasvoda, DM Hausmann, S Agarwal Journal of Vacuum Science & Technology A 39 (3), 2021 | 11 | 2021 |
| Selective Gas-Phase Functionalization of SiO2 and SiNx Surfaces with Hydrocarbons RJ Gasvoda, W Xu, Z Zhang, S Wang, EA Hudson, S Agarwal Langmuir 37 (13), 3960-3969, 2021 | 11 | 2021 |
| Gas-phase surface functionalization of SiNx with benzaldehyde to increase SiO2 to SiNx etch selectivity in atomic layer etching RJ Gasvoda, Z Zhang, EA Hudson, S Agarwal Journal of Vacuum Science & Technology A 39 (4), 2021 | 8 | 2021 |
| Vacancy Healing as a Desorption Tool: Oxygen Triggered Removal of Stored Ammonia from NiO1–x/MOR Validated by Experiments and Simulations JM Crawford, R Anderson, RJ Gasvoda, NC Kovach, CS Smoljan, ... ACS Applied Energy Materials 3 (9), 8233-8239, 2020 | 8 | 2020 |
| Area-selective atomic layer deposition of Al2O3 on SiNx with SiO2 as the nongrowth surface W Xu, RJ Gasvoda, PC Lemaire, K Sharma, DM Hausmann, S Agarwal Journal of Vacuum Science & Technology A 40 (1), 2022 | 6 | 2022 |
| Investigating silver nanoparticle interactions with quaternary ammonium functionalized triblock copolymers and their effect on midblock crystallinity NC Buggy, Y Du, MC Kuo, RJ Gasvoda, S Seifert, S Agarwal, ... ACS Applied Polymer Materials 2 (11), 4914-4923, 2020 | 6 | 2020 |
| Control of etch profiles in high aspect ratio holes via precise reactant dosing in thermal atomic layer etching A Fischer, A Routzahn, RJ Gasvoda, J Sims, T Lill Journal of Vacuum Science & Technology A 40 (2), 2022 | 5 | 2022 |
| Designing anion-exchange ionomers with oriented nanoscale phase separation at a Silver interface NC Buggy, Y Du, MC Kuo, S Seifert, RJ Gasvoda, S Agarwal, ... The Journal of Physical Chemistry C 125 (37), 20592-20605, 2021 | 4 | 2021 |
| Surface reaction modelling of thermal atomic layer etching on blanket hafnium oxide and its application on high aspect ratio structures A Fischer, D Mui, A Routzahn, R Gasvoda, J Sims, T Lill Journal of Vacuum Science & Technology A 41 (1), 2023 | 3 | 2023 |
| Selective functionalization of partially etched SiNx to enhance SiO2 to SiNx etch selectivity RJ Gasvoda, X Wang, P Kumar, EA Hudson, S Agarwal Journal of Vacuum Science & Technology A 39 (5), 2021 | 1 | 2021 |
| Selective thermal atomic layer deposition RM Pearlstein, X Lei, RG Ridgeway, A Wu, YC Lee, S Agarwal, ... US Patent App. 18/254,467, 2024 | | 2024 |
| SELECTIVE ATTACHMENT TO ENHANCE SIO2:SINX ETCH SELECTIVITY E Hudson, CC A. Wang, S Agarwal, R Gasvoda US Patent 17,754,020, 2022 | | 2022 |
| (Invited) Transport and Reaction Kinetics of Thermal ALE in High Aspect Ratio Hafnium Oxide Structures A Fischer, D Mui, A Routzahn, RJ Gasvoda, J Sims, T Lill Electrochemical Society Meeting Abstracts 242, 884-884, 2022 | | 2022 |
| Selective plasma enhanced atomic layer deposition RM Pearlstein, X Lei, RG Ridgeway, A Wu, Y Lee, S Agarwal, ... WO Patent WO2022119865A1, 2022 | | 2022 |
| Inhibiting Thermal and O2 Plasma Assisted ALD of SiO2 using Fluorothiol Passivation Layer on Cu RN Kavassery Ramesh, W Xu, RJ Gasvoda, X Lei, A Derecskei, ... Electrochemical Society Meeting Abstracts 240, 854-854, 2021 | | 2021 |
| Inhibiting Thermal and O2 Plasma Assisted ALD of SiO2 using Fluorothiol Passivation Layer on Cu RNK Ramesh, W Xu, RJ Gasvoda, X Lei, A Derecskei, H Chandra, ... 240th ECS Meeting (October 10-14, 2021), 2021 | | 2021 |
Sumit AgarwalColorado School of MinesVerified email at mines.edu
