Antonino La Magna
Antonino La Magna
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TitleCited byYear
Atomistic origins of CH3NH3PbI3 degradation to PbI2 in vacuum
I Deretzis, A Alberti, G Pellegrino, E Smecca, F Giannazzo, N Sakai, ...
Applied Physics Letters 106 (13), 131904, 2015
Degradation and hard breakdown transient of thin gate oxides in capacitors: Dependence on oxide thickness
S Lombardo, A La Magna, C Spinella, C Gerardi, F Crupi
Journal of applied physics 86 (11), 6382-6391, 1999
Stability of solution-processed MAPbI 3 and FAPbI 3 layers
E Smecca, Y Numata, I Deretzis, G Pellegrino, S Boninelli, T Miyasaka, ...
Physical Chemistry Chemical Physics 18 (19), 13413-13422, 2016
Electronic transport at monolayer-bilayer junctions in epitaxial graphene on SiC
F Giannazzo, I Deretzis, A La Magna, F Roccaforte, R Yakimova
Physical Review B 86 (23), 235422, 2012
Dopant redistribution and electrical activation in silicon following ultra-low energy boron implantation and excimer laser annealing
S Whelan, A La Magna, V Privitera, G Mannino, M Italia, C Bongiorno, ...
Physical Review B 67 (7), 075201, 2003
Delaminated graphene at silicon carbide facets: atomic scale imaging and spectroscopy
G Nicotra, QM Ramasse, I Deretzis, A La Magna, C Spinella, F Giannazzo
ACS nano 7 (4), 3045-3052, 2013
Electrical and thermal transient during dielectric breakdown of thin oxides in metal--silicon capacitors
S Lombardo, F Crupi, A La Magna, C Spinella, A Terrasi, A La Mantia, ...
Journal of applied physics 84 (1), 472-479, 1998
SiO2/4H-SiC interface doping during post-deposition-annealing of the oxide in N2O or POCl3
P Fiorenza, F Giannazzo, M Vivona, A La Magna, F Roccaforte
Applied Physics Letters 103 (15), 153508, 2013
A phase-field approach to the simulation of the excimer laser annealing process in Si
A La Magna, P Alippi, V Privitera, G Fortunato, M Camalleri, B Svensson
Journal of applied physics 95 (9), 4806-4814, 2004
Effects due to backscattering and pseudogap features in graphene nanoribbons with single vacancies
I Deretzis, G Fiori, G Iannaccone, A La Magna
Physical Review B 81 (8), 085427, 2010
Role of extended vacancy-vacancy interaction on the ripening of voids in silicon
A La Magna, S Coffa, L Colombo
Physical review letters 82 (8), 1720, 1999
High-quality 6 inch (111) 3C-SiC films grown on off-axis (111) Si substrates
A Severino, C Bongiorno, N Piluso, M Italia, M Camarda, M Mauceri, ...
Thin Solid Films 518 (6), S165-S169, 2010
Role of contact bonding on electronic transport in metal–carbon nanotube–metal systems
I Deretzis, A La Magna
Nanotechnology 17 (20), 5063, 2006
Similar structural dynamics for the degradation of CH3NH3PbI3 in air and in vacuum
A Alberti, I Deretzis, G Pellegrino, C Bongiorno, E Smecca, G Mannino, ...
ChemPhysChem 16 (14), 3064-3071, 2015
Role of covalent and metallic intercalation on the electronic properties of epitaxial graphene on SiC (0001)
I Deretzis, A La Magna
Physical Review B 84 (23), 235426, 2011
Variational study of the discrete Holstein model
A La Magna, R Pucci
Physical Review B 53 (13), 8449, 1996
N-type doping of Ge by As implantation and excimer laser annealing
R Milazzo, E Napolitani, G Impellizzeri, G Fisicaro, S Boninelli, ...
Journal of Applied Physics 115 (5), 053501, 2014
Direct growth of quasi-free-standing epitaxial graphene on nonpolar SiC surfaces
M Ostler, I Deretzis, S Mammadov, F Giannazzo, G Nicotra, C Spinella, ...
Physical Review B 88 (8), 085408, 2013
Mechanisms of growth and defect properties of epitaxial SiC
F La Via, M Camarda, A La Magna
Applied Physics Reviews 1 (3), 031301, 2014
Mobile intersite bipolarons in the discrete Holstein-Hubbard model
A La Magna, R Pucci
Physical Review B 55 (22), 14886, 1997
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