Sanghun Jeon
Title
Cited by
Cited by
Year
Highly stretchable resistive pressure sensors using a conductive elastomeric composite on a micropyramid array
CL Choong, MB Shim, BS Lee, S Jeon, DS Ko, TH Kang, J Bae, SH Lee, ...
Advanced materials 26 (21), 3451-3458, 2014
8422014
Highly stretchable electric circuits from a composite material of silver nanoparticles and elastomeric fibres
M Park, J Im, M Shin, Y Min, J Park, H Cho, S Park, MB Shim, S Jeon, ...
Nature nanotechnology 7 (12), 803-809, 2012
7332012
High performance amorphous oxide thin film transistors with self-aligned top-gate structure
JC Park, SW Kim, SI Kim, H Yin, JH Hur, SH Jeon, SH Park, IH Song, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
6132009
Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays
S Jeon, SE Ahn, I Song, CJ Kim, UI Chung, E Lee, I Yoo, A Nathan, S Lee, ...
Nature materials 11 (4), 301-305, 2012
3582012
A flexible bimodal sensor array for simultaneous sensing of pressure and temperature
NT Tien, S Jeon, DI Kim, TQ Trung, M Jang, BU Hwang, KE Byun, J Bae, ...
Advanced Materials 26 (5), 796-804, 2014
3172014
Trap-limited and percolation conduction mechanisms in amorphous oxide semiconductor thin film transistors
S Lee, K Ghaffarzadeh, A Nathan, J Robertson, S Jeon, C Kim, IH Song, ...
Applied Physics Letters 98 (20), 203508, 2011
2252011
Effect of hygroscopic nature on the electrical characteristics of lanthanide oxides and
S Jeon, H Hwang
Journal of Applied Physics 93 (10), 6393-6395, 2003
1692003
Persistent photoconductivity in Hf–In–Zn–O thin film transistors
K Ghaffarzadeh, A Nathan, J Robertson, S Kim, S Jeon, C Kim, UI Chung, ...
Applied Physics Letters 97 (14), 143510, 2010
1422010
HfZrOx-Based Ferroelectric Synapse Device With 32 Levels of Conductance States for Neuromorphic Applications
S Oh, T Kim, M Kwak, J Song, J Woo, S Jeon, IK Yoo, H Hwang
IEEE Electron Device Letters 38 (6), 732-735, 2017
1352017
Metal oxide thin film phototransistor for remote touch interactive displays
SE Ahn, I Song, S Jeon, YW Jeon, Y Kim, C Kim, B Ryu, JH Lee, A Nathan, ...
Advanced materials 24 (19), 2631-2636, 2012
1342012
Instability in threshold voltage and subthreshold behavior in Hf–In–Zn–O thin film transistors induced by bias-and light-stress
K Ghaffarzadeh, A Nathan, J Robertson, S Kim, S Jeon, C Kim, UI Chung, ...
Applied Physics Letters 97 (11), 113504, 2010
1232010
Non-volatile semiconductor memory device with alternative metal gate material
SH Jeon, J Han, C Kim
US Patent 7,391,075, 2008
1212008
Amorphous oxide semiconductor TFTs for displays and imaging
A Nathan, S Lee, S Jeon, J Robertson
Journal of Display Technology 10 (11), 917-927, 2013
1192013
Electrical characteristics of prepared by annealing of
S Jeon, CJ Choi, TY Seong, H Hwang
Applied physics letters 79 (2), 245-247, 2001
1182001
Excellent electrical characteristics of lanthanide (Pr, Nd, Sm, Gd, and Dy) oxide and lanthanide-doped oxide for MOS gate dielectric applications
S Jeon, K Im, H Yang, H Lee, H Sim, S Choi, T Jang, H Hwang
International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001
1092001
180nm gate length amorphous InGaZnO thin film transistor for high density image sensor applications
S Jeon, S Park, I Song, JH Hur, J Park, S Kim, S Kim, H Yin, E Lee, S Ahn, ...
2010 International Electron Devices Meeting, 21.3. 1-21.3. 4, 2010
1062010
Hot carrier trapping induced negative photoconductance in InAs nanowires toward novel nonvolatile memory
Y Yang, X Peng, HS Kim, T Kim, S Jeon, HK Kang, W Choi, J Song, ...
Nano letters 15 (9), 5875-5882, 2015
1042015
Highly Manufacturable 32Gb Multi -- Level NAND Flash Memory with 0.0098 μm2Cell Size using TANOS(Si - Oxide - Al2O3 - TaN) Cell Technology
Y Park, J Choi, C Kang, C Lee, Y Shin, B Choi, J Kim, S Jeon, J Sel, ...
2006 International Electron Devices Meeting, 1-4, 2006
1002006
Transparent semiconducting oxide technology for touch free interactive flexible displays
S Lee, S Jeon, R Chaji, A Nathan
Proceedings of the IEEE 103 (4), 644-664, 2015
912015
Nanocrystalline ZnON; High mobility and low band gap semiconductor material for high performance switch transistor and image sensor application
E Lee, A Benayad, T Shin, HI Lee, DS Ko, TS Kim, KS Son, M Ryu, S Jeon, ...
Scientific reports 4 (1), 1-8, 2014
882014
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Articles 1–20