Matteo Meneghini
Matteo Meneghini
Associate Professor at the University of Padova
Verified email at
Cited by
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Reliability of GaN high-electron-mobility transistors: State of the art and perspectives
G Meneghesso, G Verzellesi, F Danesin, F Rampazzo, F Zanon, A Tazzoli, ...
IEEE Transactions on Device and Materials Reliability 8 (2), 332-343, 2008
Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies
G Verzellesi, D Saguatti, M Meneghini, F Bertazzi, M Goano, ...
Journal of Applied Physics 114 (7), 10_1, 2013
A review on the reliability of GaN-based LEDs
M Meneghini, LR Trevisanello, G Meneghesso, E Zanoni
IEEE Transactions on Device and Materials Reliability 8 (2), 323-331, 2008
A review on the physical mechanisms that limit the reliability of GaN-based LEDs
M Meneghini, A Tazzoli, G Mura, G Meneghesso, E Zanoni
IEEE Transactions on Electron Devices 57 (1), 108-118, 2009
The 2018 GaN power electronics roadmap
H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ...
Journal of Physics D: Applied Physics 51 (16), 163001, 2018
Deep-level characterization in GaN HEMTs-Part I: Advantages and limitations of drain current transient measurements
D Bisi, M Meneghini, C De Santi, A Chini, M Dammann, P Brueckner, ...
IEEE Transactions on electron devices 60 (10), 3166-3175, 2013
Accelerated life test of high brightness light emitting diodes
L Trevisanello, M Meneghini, G Mura, M Vanzi, M Pavesi, G Meneghesso, ...
IEEE Transactions on Device and Materials Reliability 8 (2), 304-311, 2008
Towards 10 Gb/s orthogonal frequency division multiplexing-based visible light communication using a GaN violet micro-LED
MS Islim, RX Ferreira, X He, E Xie, S Videv, S Viola, S Watson, ...
Photonics Research 5 (2), A35-A43, 2017
Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias
M Meneghini, A Stocco, M Bertin, D Marcon, A Chini, G Meneghesso, ...
Applied Physics Letters 100 (3), 033505, 2012
A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes
M Meneghini, N Trivellin, G Meneghesso, E Zanoni, U Zehnder, B Hahn
Journal of Applied Physics 106 (11), 114508, 2009
Performance degradation of high-brightness light emitting diodes under DC and pulsed bias
S Buso, G Spiazzi, M Meneghini, G Meneghesso
IEEE Transactions on Device and Materials Reliability 8 (2), 312-322, 2008
AlGaN/GaN-based HEMTs failure physics and reliability: Mechanisms affecting gate edge and Schottky junction
E Zanoni, M Meneghini, A Chini, D Marcon, G Meneghesso
IEEE transactions on electron devices 60 (10), 3119-3131, 2013
Investigation of trapping and hot-electron effects in GaN HEMTs by means of a combined electrooptical method
M Meneghini, N Ronchi, A Stocco, G Meneghesso, UK Mishra, Y Pei, ...
IEEE Transactions on electron devices 58 (9), 2996-3003, 2011
Reliability issues of gallium nitride high electron mobility transistors
G Meneghesso, M Meneghini, A Tazzoli, A Stocco, A Chini, E Zanoni
International Journal of Microwave and Wireless Technologies 2 (1), 39-50, 2010
Localized damage in AlGaN/GaN HEMTs induced by reverse-bias testing
E Zanoni, F Danesin, M Meneghini, A Cetronio, C Lanzieri, M Peroni, ...
IEEE Electron Device Letters 30 (5), 427-429, 2009
Recent results on the degradation of white LEDs for lighting
G Meneghesso, M Meneghini, E Zanoni
Journal of Physics D: Applied Physics 43 (35), 354007, 2010
High temperature electro-optical degradation of InGaN/GaN HBLEDs
M Meneghini, L Trevisanello, C Sanna, G Mura, M Vanzi, G Meneghesso, ...
Microelectronics Reliability 47 (9-11), 1625-1629, 2007
Influence of short-term low current dc aging on the electrical and optical properties of InGaN blue light-emitting diodes
F Rossi, M Pavesi, M Meneghini, G Salviati, M Manfredi, G Meneghesso, ...
Journal of applied physics 99 (5), 053104, 2006
Buffer traps in Fe-doped AlGaN/GaN HEMTs: Investigation of the physical properties based on pulsed and transient measurements
M Meneghini, I Rossetto, D Bisi, A Stocco, A Chini, A Pantellini, C Lanzieri, ...
IEEE Transactions on Electron Devices 61 (12), 4070-4077, 2014
Time-and field-dependent trapping in GaN-based enhancement-mode transistors with p-gate
M Meneghini, C de Santi, T Ueda, T Tanaka, D Ueda, E Zanoni, ...
IEEE Electron device letters 33 (3), 375-377, 2012
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