Follow
Djabar Maafri
Title
Cited by
Cited by
Year
Efficient RF extrinsic parameters extraction technique for FinFETs
D Maafri, MCE Yagoub, R Touhami, A Slimane, MT Belaroussi
Microwave and Optical Technology Letters 56 (11), 2616-2619, 2014
92014
A new high-frequency HEMT GaN extrinsic capacitance extraction technique
D Maafri, AA Saadi, M Al Sabbagh, MCE Yagoub
IEEE Microwave and Wireless Components Letters 32 (4), 305-307, 2021
82021
An efficient and reliable small signal intrinsic parameters extraction for HEMT GaN devices
D Maafri, A Saadi, A Slimane, MCE Yagoub
Microwave and Optical Technology Letters 60 (2), 455-458, 2018
82018
A 0.6-V/1.2-V low power single ended CMOS LNA for multi-standard RF front-ends
A Slimane, SA Tedjini, A Taibi, MT Belaroussi, D Maafri
2014 26th International Conference on Microelectronics (ICM), 68-71, 2014
82014
Efficient small-signal extraction technique for ultra-thin body and ultra-thin box FD-SOI transistor
D Maafri, MCE Yagoub, R Touhami, A Slimane, MT Belaroussi, JP Raskin
2015 IEEE MTT-S International Conference on Numerical Electromagnetic and …, 2015
72015
An efficient extrinsic capacitances extraction method for small‐signal GaN HEMT devices
B Zatout, D Maafri, A Taibi, Y Belaroussi, S Kerai, M Al Sabbagh, ...
International Journal of Numerical Modelling: Electronic Networks, Devices …, 2023
32023
Extraction of bias dependent access resistances of advanced MOSFETs
B Zatout, D Maafri, S Kerai
2022 2nd International Conference on Advanced Electrical Engineering (ICAEE …, 2022
22022
Prediction of RF performances of advanced MOS transistors from DC and low frequency measurements
D Maafri, B Kazemi Esfeh, A Saadi, MCE Yagoub, JP Raskin
Microwave and Optical Technology Letters 60 (9), 2256-2262, 2018
22018
Caractérisation et modélisation large bande des transistors à effet de champ
D Maafri
Faculté d'Electronique et d'Informatique, 2017
22017
A 0.6 V, 2.1 mW CMOS UWB LNA for 3–5 GHz wireless receivers
A Slimane, A Taibi, AA Saadi, D Maafri, S Tedjini, S Traiche
2016 IEEE 59th International Midwest Symposium on Circuits and Systems …, 2016
22016
A 0.9 V low power reconfigurable CMOS folded cascode LNA for multi-standard wireless applications
A Taibi, A Slimane, SA Tedjini, MT Belaroussi, D Maafri, M Trabelsi
2014 9th International Design and Test Symposium (IDT), 185-188, 2014
22014
A New Small-Signal Modeling and Extraction Method in AlGaN/GaN HEMTs
RT D. Maafri, M.C.E. Yagoub
International Journal of Research and Reviews in Information Sciences …, 2012
2*2012
Structural and nanomechanical properties of porous silicon: Cheap substrate for CMOS process industry
Y Belaroussi, G Scheen, AA Saadi, A Taibi, D Maafri, B Nysten, ...
Surface and Interface Analysis 52 (12), 1055-1060, 2020
12020
Effect of Substrate Resistivity on Spiral Inductor in Radio Frequency Bands
Y Belaroussi, A Taibi, D Maafri, B Zatout, S Debiane, L Chana
2023 2nd International Conference on Electronics, Energy and Measurement …, 2023
2023
Efficient RF Small-Signal Parasitic Parameters Extraction Technique For The Advanced MOSFETs
D Maafri, B Zatout, Y Belaroussi, MCE Yagoub
2023 2nd International Conference on Electronics, Energy and Measurement …, 2023
2023
An Efficient Extraction of the Bias Dependent Extrinsic Resistances of the HEMT GaN/SiC
B Zatout, D Maafri, S Kerai, Y Belaroussi
2023 2nd International Conference on Electronics, Energy and Measurement …, 2023
2023
Conception d’un Système Redresseur-Amplificateur UHF pour Tags RFID
D Maafri
2009
TOC (Table of contents)
H Chikh-Touami, S Haciane, HG Algeria, H Benyezza, M Bouhedda, ...
Efficient Small-Signal E Ultra-T
D Maafri, MCE Yagoub
The system can't perform the operation now. Try again later.
Articles 1–19