Terahertz compressive imaging with metamaterial spatial light modulators CM Watts, D Shrekenhamer, J Montoya, G Lipworth, J Hunt, T Sleasman, ... Nature photonics 8 (8), 605-609, 2014 | 894 | 2014 |
Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors H Ko, K Takei, R Kapadia, S Chuang, H Fang, PW Leu, K Ganapathi, ... Nature 468 (7321), 286-289, 2010 | 478 | 2010 |
A surface plasmon enhanced infrared photodetector based on InAs quantum dots CC Chang, YD Sharma, YS Kim, JA Bur, RV Shenoi, S Krishna, D Huang, ... Nano letters 10 (5), 1704-1709, 2010 | 356 | 2010 |
nBn structure based on InAs∕ GaSb type-II strained layer superlattices JB Rodriguez, E Plis, G Bishop, YD Sharma, H Kim, LR Dawson, ... Applied Physics Letters 91 (4), 2007 | 336 | 2007 |
Quantum dots-in-a-well infrared photodetectors S Krishna Journal of Physics D: Applied Physics 38 (13), 2142, 2005 | 335 | 2005 |
Cavity Q, mode volume, and lasing threshold in small diameter AlGaAs microdisks with embedded quantum dots K Srinivasan, M Borselli, O Painter, A Stintz, S Krishna Optics express 14 (3), 1094-1105, 2006 | 274 | 2006 |
Normal-incidence, high-temperature, mid-infrared, InAs-GaAs vertical quantum-dot infrared photodetector AD Stiff, S Krishna, P Bhattacharya, SW Kennerly IEEE Journal of Quantum Electronics 37 (11), 1412-1419, 2001 | 214 | 2001 |
A monolithically integrated plasmonic infrared quantum dot camera SJ Lee, Z Ku, A Barve, J Montoya, WY Jang, SRJ Brueck, M Sundaram, ... Nature communications 2 (1), 286, 2011 | 193 | 2011 |
A multispectral and polarization-selective surface-plasmon resonant midinfrared detector J Rosenberg, RV Shenoi, TE Vandervelde, S Krishna, O Painter Applied Physics Letters 95 (16), 2009 | 193 | 2009 |
Demonstration of a 320× 256 two-color focal plane array using InAs/InGaAs quantum dots in well detectors S Krishna, D Forman, S Annamalai, P Dowd, P Varangis, T Tumolillo, ... Applied Physics Letters 86 (19), 2005 | 191 | 2005 |
High-responsivity, normal-incidence long-wave infrared (λ∼ 7.2 μm) InAs/In0. 15Ga0. 85As dots-in-a-well detector S Raghavan, P Rotella, A Stintz, B Fuchs, S Krishna, C Morath, ... Applied Physics Letters 81 (8), 1369-1371, 2002 | 189 | 2002 |
Absorption, carrier lifetime, and gain in InAs-GaAs quantum-dot infrared photodetectors B Kochman, AD Stiff-Roberts, S Chakrabarti, JD Phillips, S Krishna, ... IEEE Journal of Quantum Electronics 39 (3), 459-467, 2003 | 184 | 2003 |
Second harmonic generation from a nanopatterned isotropic nonlinear material W Fan, S Zhang, NC Panoiu, A Abdenour, S Krishna, RM Osgood, ... Nano Letters 6 (5), 1027-1030, 2006 | 182 | 2006 |
Performance improvement of longwave infrared photodetector based on type-II InAs/GaSb superlattices using unipolar current blocking layers N Gautam, HS Kim, MN Kutty, E Plis, LR Dawson, S Krishna Applied Physics Letters 96 (23), 2010 | 174 | 2010 |
Review of current progress in quantum dot infrared photodetectors AV Barve, SJ Lee, SK Noh, S Krishna Laser & Photonics Reviews 4 (6), 738-750, 2010 | 173 | 2010 |
High-detectivity, normal-incidence, mid-infrared quantum-dot detector operating at 150 K AD Stiff, S Krishna, P Bhattacharya, S Kennerly Applied Physics Letters 79 (3), 421-423, 2001 | 162 | 2001 |
Quantum dot infrared photodetector enhanced by surface plasma wave excitation SC Lee, S Krishna, SRJ Brueck Optics express 17 (25), 23160-23168, 2009 | 161 | 2009 |
Phonon-polaritonics: enabling powerful capabilities for infrared photonics S Foteinopoulou, GCR Devarapu, GS Subramania, S Krishna, ... Nanophotonics 8 (12), 2129-2175, 2019 | 158 | 2019 |
Mid-IR focal plane array based on type-II InAs∕ GaSb strain layer superlattice detector with nBn design HS Kim, E Plis, JB Rodriguez, GD Bishop, YD Sharma, LR Dawson, ... Applied Physics Letters 92 (18), 2008 | 149 | 2008 |
Three-color and InAs/InGaAs quantum-dots-in-a-well detector S Krishna, S Raghavan, G Von Winckel, A Stintz, G Ariyawansa, ... Applied Physics Letters 83 (14), 2745-2747, 2003 | 138 | 2003 |