stefano frabboni
TitleCited byYear
Electron Holographic Observations of the Electrostatic Field Associated with Thin Reverse-Biased p−n Junctions
S Frabboni, G Matteucci, G Pozzi, M Vanzi
Physical review letters 55 (20), 2196, 1985
1701985
Hydrogen and helium bubbles in silicon
GF Cerofolini, F Corni, S Frabboni, C Nobili, G Ottaviani, R Tonini
Materials Science and Engineering: R: Reports 27 (1-2), 1-52, 2000
1632000
Single-metalloprotein wet biotransistor
A Alessandrini, M Salerno, S Frabboni, P Facci
Applied Physics Letters 86 (13), 133902, 2005
982005
Strain determination in silicon microstructures by combined convergent beam electron diffraction, process simulation, and micro-Raman spectroscopy
V Senez, A Armigliato, I De Wolf, G Carnevale, R Balboni, S Frabboni, ...
Journal of applied physics 94 (9), 5574-5583, 2003
962003
Hydrogen-related complexes as the stressing species in high-fluence, hydrogen-implanted, single-crystal silicon
GF Cerofolini, L Meda, R Balboni, F Corni, S Frabboni, G Ottaviani, ...
Physical Review B 46 (4), 2061, 1992
951992
Generation of nondiffracting electron Bessel beams
V Grillo, E Karimi, GC Gazzadi, S Frabboni, MR Dennis, RW Boyd
Physical Review X 4 (1), 011013, 2014
912014
Impact of energy filtering and carrier localization on the thermoelectric properties of granular semiconductors
D Narducci, E Selezneva, G Cerofolini, S Frabboni, G Ottaviani
Journal of Solid State Chemistry 193, 19-25, 2012
872012
Highly efficient electron vortex beams generated by nanofabricated phase holograms
V Grillo, G Carlo Gazzadi, E Karimi, E Mafakheri, RW Boyd, S Frabboni
Applied Physics Letters 104 (4), 043109, 2014
852014
Simultaneous increase in electrical conductivity and Seebeck coefficient in highly boron-doped nanocrystalline Si
N Neophytou, X Zianni, H Kosina, S Frabboni, B Lorenzi, D Narducci
Nanotechnology 24 (20), 205402, 2013
842013
Structured quantum waves
J Harris, V Grillo, E Mafakheri, GC Gazzadi, S Frabboni, RW Boyd, ...
Nature Physics 11 (8), 629, 2015
682015
Observation of electrostatic fields by electron holography: the case of reverse-biased pn junctions
S Frabboni, G Matteucci, G Pozzi
Ultramicroscopy 23 (1), 29-37, 1987
671987
Fabrication by electron beam induced deposition and transmission electron microscopic characterization of sub- freestanding Pt nanowires
S Frabboni, GC Gazzadi, L Felisari, A Spessot
Applied physics letters 88 (21), 213116, 2006
632006
Application of convergent beam electron diffraction to two-dimensional strain mapping in silicon devices
A Armigliato, R Balboni, GP Carnevale, G Pavia, D Piccolo, S Frabboni, ...
Applied Physics Letters 82 (13), 2172-2174, 2003
622003
Helium-implanted silicon: A study of bubble precursors
F Corni, G Calzolari, S Frabboni, C Nobili, G Ottaviani, R Tonini, ...
Journal of applied physics 85 (3), 1401-1408, 1999
581999
Holographic generation of highly twisted electron beams
V Grillo, GC Gazzadi, E Mafakheri, S Frabboni, E Karimi, RW Boyd
Physical Review Letters 114 (3), 034801, 2015
572015
Solid‐phase epitaxial growth of Ge‐Si alloys made by ion implantation
F Corni, S Frabboni, G Ottaviani, G Queirolo, D Bisero, C Bresolin, ...
Journal of applied physics 71 (6), 2644-2649, 1992
511992
Determination of bulk mismatch values in trasmission electron microscopy cross-sections of heteostructures by convergent-beam electron diffraction
R Balboni, S Frabboni, A Armigliato
Philosophical Magazine A 77 (1), 67-83, 1998
471998
Improving spatial resolution of convergent beam electron diffraction strain mapping in silicon microstructures
A Armigliato, R Balboni, S Frabboni
Applied Physics Letters 86 (6), 063508, 2005
432005
High-dose helium-implanted single-crystal silicon: Annealing behavior
R Tonini, F Corni, S Frabboni, G Ottaviani, GF Cerofolini
Journal of applied physics 84 (9), 4802-4808, 1998
421998
Nanovoid formation in helium-implanted single-crystal silicon studied by in situ techniques
S Frabboni, F Corni, C Nobili, R Tonini, G Ottaviani
Physical Review B 69 (16), 165209, 2004
412004
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Articles 1–20