A graphene field-effect device MC Lemme, TJ Echtermeyer, M Baus, H Kurz
IEEE Electron Device Letters 28 (4), 282-284, 2007
1400 2007 Strong plasmonic enhancement of photovoltage in graphene TJ Echtermeyer, L Britnell, PK Jasnos, A Lombardo, RV Gorbachev, ...
Nature communications 2 (1), 458, 2011
1056 2011 Intrinsic and extrinsic corrugation of monolayer graphene deposited on V Geringer, M Liebmann, T Echtermeyer, S Runte, M Schmidt, ...
Physical review letters 102 (7), 076102, 2009
451 2009 Non-volatile switching in graphene field effect devices TJ Echtermeyer, MC Lemme, M Baus, BN Szafranek, AK Geim, H Kurz
IEEE Electron Device Letters 29 (8), 952-954, 2008
221 2008 Photo-thermoelectric and photoelectric contributions to light detection in metal-graphene-metal photodetectors TJ Echtermeyer, P Nene, M Trushin, RV Gorbachev, A Eiden, S Milana, ...
Nano Letters 14 (7), 3733–3742, 2014
210 2014 Synthesis of graphene on silicon dioxide by a solid carbon source J Hofrichter, BN Szafranek, M Otto, TJ Echtermeyer, M Baus, A Majerus, ...
Nano letters 10 (1), 36-42, 2010
205 2010 Surface plasmon polariton graphene photodetectors TJ Echtermeyer, S Milana, U Sassi, A Eiden, M Wu, E Lidorikis, AC Ferrari
Nano Letters 16 (1), 8-20, 2016
200 2016 Mobility in graphene double gate field effect transistors MC Lemme, TJ Echtermeyer, M Baus, BN Szafranek, J Bolten, M Schmidt, ...
Solid-State Electronics 52 (4), 514-518, 2008
144 2008 Bistability and oscillatory motion of natural nanomembranes appearing within monolayer graphene on silicon dioxide T Mashoff, M Pratzer, V Geringer, TJ Echtermeyer, MC Lemme, ...
Nano letters 10 (2), 461-465, 2010
137 2010 Nonperturbative harmonic generation in graphene from intense midinfrared pulsed light M Taucer, TJ Hammond, PB Corkum, G Vampa, C Couture, N Thire, ...
Physical Review B 96 (19), 195420, 2017
70 2017 Graphene field-effect devices TJ Echtermeyer, MC Lemme, J Bolten, M Baus, M Ramsteiner, H Kurz
The European Physical Journal Special Topics 148, 19-26, 2007
70 2007 CMOS integration of epitaxial Gd2O3 high-k gate dielectrics HDB Gottlob, T Echtermeyer, T Mollenhauer, JK Efavi, M Schmidt, ...
Solid-State Electronics 50 (6), 979-985, 2006
64 2006 0.86-nm CET Gate Stacks With Epitaxial HDB Gottlob, T Echtermeyer, M Schmidt, T Mollenhauer, JK Efavi, ...
IEEE electron device letters 27 (10), 814-816, 2006
56 2006 Towards substrate engineering of graphene–silicon Schottky diode photodetectors H Selvi, N Unsuree, E Whittaker, MP Halsall, EW Hill, A Thomas, ...
Nanoscale 10 (7), 3399-3409, 2018
49 2018 Electron-beam-induced direct etching of graphene C Thiele, A Felten, TJ Echtermeyer, AC Ferrari, C Casiraghi, H Löhneysen, ...
Carbon 64, 84-91, 2013
49 2013 Graphene–silicon-on-insulator (GSOI) Schottky diode photodetectors H Selvi, EW Hill, P Parkinson, TJ Echtermeyer
Nanoscale 10 (40), 18926-18935, 2018
42 2018 Graphene-based MIM diode and associated methods A Colli, SA Awan, A Lombardo, TJ Echtermeyer, TS Kulmala, AC Ferrari
US Patent 9,202,945, 2015
23 2015 Investigation of MOS capacitors and SOI–MOSFETs with epitaxial gadolinium oxide (Gd2O3) and titanium nitride (TiN) electrodes T Echtermeyer, HDB Gottlob, T Wahlbrink, T Mollenhauer, M Schmidt, ...
Solid-State Electronics 51 (4), 617-621, 2007
22 2007 Visible and infrared photocurrent enhancement in a graphene-silicon Schottky photodetector through surface-states and electric field engineering N Unsuree, H Selvi, MG Crabb, JA Alanis, P Parkinson, TJ Echtermeyer
2D Materials 6 (4), 041004, 2019
21 2019 Towards graphene field effect transistors MC Lemme, T Echtermeyer, M Baus, BN Szafranek, M Schmidt, H Kurz
ECS Transactions 11 (6), 413, 2007
18 2007 