| Electrically pumped continuous-wave III–V quantum dot lasers on silicon S Chen, W Li, J Wu, Q Jiang, M Tang, S Shutts, SN Elliott, A Sobiesierski, ... Nature Photonics 10 (5), 307, 2016 | 417 | 2016 |
| Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate H Liu, T Wang, Q Jiang, R Hogg, F Tutu, F Pozzi, A Seeds Nature Photonics 5 (7), 416-419, 2011 | 312 | 2011 |
| Improved performance of multilayer quantum-dot lasers using a high-growth-temperature spacer layer HY Liu, IR Sellers, TJ Badcock, DJ Mowbray, MS Skolnick, KM Groom, ... Applied Physics Letters 85 (5), 704-706, 2004 | 290 | 2004 |
| 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates T Wang, H Liu, A Lee, F Pozzi, A Seeds Optics express 19 (12), 11381-11386, 2011 | 240 | 2011 |
| Optimizing the growth of 1.3 μm InAs/InGaAs dots-in-a-well structure HY Liu, M Hopkinson, CN Harrison, MJ Steer, R Frith, IR Sellers, ... Journal of applied physics 93 (5), 2931-2936, 2003 | 205 | 2003 |
| Long lifetimes of quantum-dot intersublevel transitions in the terahertz range EA Zibik, T Grange, BA Carpenter, NE Porter, R Ferreira, G Bastard, ... Nature materials 8 (10), 803-807, 2009 | 203 | 2009 |
| Surface-passivated GaAsP single-nanowire solar cells exceeding 10% efficiency grown on silicon JV Holm, HI Jųrgensen, P Krogstrup, J Nygård, H Liu, M Aagesen Nature communications 4 (1), 1-5, 2013 | 180 | 2013 |
| Nuclear spin switch in semiconductor quantum dots AI Tartakovskii, T Wright, A Russell, VI Fal’Ko, AB Van’kov, ... Physical review letters 98 (2), 026806, 2007 | 176 | 2007 |
| Fast optical preparation, control, and readout of a single quantum dot spin AJ Ramsay, SJ Boyle, RS Kolodka, JBB Oliveira, J Skiba-Szymanska, ... Physical review letters 100 (19), 197401, 2008 | 162 | 2008 |
| Long-wavelength light emission and lasing from quantum dots covered by a GaAsSb strain-reducing layer HY Liu, MJ Steer, TJ Badcock, DJ Mowbray, MS Skolnick, P Navaretti, ... Applied Physics Letters 86 (14), 143108, 2005 | 155 | 2005 |
| High-performance three-layer 1.3-μm InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents HY Liu, DT Childs, TJ Badcock, KM Groom, IR Sellers, M Hopkinson, ... IEEE photonics technology letters 17 (6), 1139-1141, 2005 | 148 | 2005 |
| Continuous-wave InAs/GaAs quantum-dot laser diodes monolithically grown on Si substrate with low threshold current densities A Lee, Q Jiang, M Tang, A Seeds, H Liu Optics express 20 (20), 22181-22187, 2012 | 147 | 2012 |
| 1.3 µm InAs/GaAs multilayer quantum-dot laser with extremely low room-temperature threshold current density IR Sellers, HY Liu, KM Groom, DT Childs, D Robbins, TJ Badcock, ... Electronics Letters 40 (22), 1412-1413, 2004 | 140 | 2004 |
| Mode structure of the photonic crystal cavity ARA Chalcraft, S Lam, D O’Brien, TF Krauss, M Sahin, D Szymanski, ... Applied physics letters 90 (24), 241117, 2007 | 122 | 2007 |
| Quantum dot optoelectronic devices: lasers, photodetectors and solar cells J Wu, S Chen, A Seeds, H Liu Journal of Physics D: Applied Physics 48 (36), 363001, 2015 | 114 | 2015 |
| Room-temperature 1.6 µm light emission from InAs/GaAs quantum dots with a thin GaAsSb cap layer HY Liu, MJ Steer, TJ Badcock, DJ Mowbray, MS Skolnick, F Suįrez, ... Journal of applied physics 99, 046104, 2006 | 112 | 2006 |
| Influences of the spacer layer growth temperature on multilayer quantum dot structures HY Liu, IR Sellers, M Gutierrez, KM Groom, WM Soong, M Hopkinson, ... Journal of applied physics 96 (4), 1988-1992, 2004 | 100 | 2004 |
| Effect of thermal annealing and strain engineering on the fine structure of quantum dot excitons AI Tartakovskii, MN Makhonin, IR Sellers, J Cahill, AD Andreev, ... Physical Review B 70 (19), 193303, 2004 | 99 | 2004 |
| p-doped 1.3 μmInAs∕ GaAs quantum-dot laser with a low threshold current density and high differential efficiency HY Liu, SL Liew, T Badcock, DJ Mowbray, MS Skolnick, SK Ray, TL Choi, ... Applied physics letters 89 (7), 073113, 2006 | 98 | 2006 |
| Suppression of InAs/GaAs quantum dot decomposition by the incorporation of a GaAsSb capping layer JM Ulloa, IWD Drouzas, PM Koenraad, DJ Mowbray, MJ Steer, HY Liu, ... Applied physics letters 90 (21), 213105-213105, 2007 | 97 | 2007 |
Mark HopkinsonUniversity of SheffieldVerified email at sheffield.ac.uk
