Vincenzo Fiorentini

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Alessio FilippettiCNR-IOM and University of CagliariVerified email at dsf.unica.it
Pietro DelugasSISSAVerified email at sissa.it
David VanderbiltProfessor of Physics and Astronomy, Rutgers UniversityVerified email at physics.rutgers.edu
Matthias SchefflerDirector of NOMAD Laboratory at FHI of Max-Planck-GesellschaftVerified email at fhi-berlin.mpg.de
Maria Barbara MaccioniDepartment of Physics, University of PaviaVerified email at unipv.it
Andrea BosinPhysics Department, Universita' di Cagliari, ItalyVerified email at dsf.unica.it
Paolo RuggeroneFull Professor of Applied Physics, University of CagliariVerified email at dsf.unica.it
Paolo LugliFree University of Bozen-BolzanoVerified email at unibz.it
Fabio Della SalaCNR-IMM and IITVerified email at le.imm.cnr.it
Oliver AmbacherGips-Schüle-Professur für Leistungselektronik, Universität FreiburgVerified email at inatech.uni-freiburg.de
Aldo Di CarloProf. of Opto&Nano-electronics, University of Rome Tor Vergata. Consiglio Nazionale delle RicercheVerified email at uniroma2.it
Giancarlo CappelliniDipartimento di Fisica, Università di CagliariVerified email at dsf.unica.it
Paola AlippiCNRVerified email at cnr.it
Danilo PuggioniNorthwestern UniversityVerified email at northwestern.edu
Martin StutzmannProfessor (retired) of Experimental Physics, Walter Schottky Institut, TU MünchenVerified email at tum.de
geoffrey pourtoisimecVerified email at imec.be
Carlo Maria CarbonaroProfessore Associato di Fisica, Dipartimento di Fisica, Università di CagliariVerified email at dsf.unica.it

Vincenzo Fiorentini

Associate professor, condensed matter physics, University of Cagliari, Italy

Verified email at dsf.unica.it - Homepage

Physics Condensed matter theory magnetism nanoelectronics


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Spontaneous polarization and piezoelectric constants of III-V nitrides F Bernardini, V Fiorentini, D Vanderbilt Physical Review B 56 (16), R10024, 1997	3963	1997
Pyroelectric properties of Al (In) GaN/GaN hetero-and quantum well structures O Ambacher, J Majewski, C Miskys, A Link, M Hermann, M Eickhoff, ... Journal of physics: condensed matter 14 (13), 3399, 2002	1415	2002
Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures V Fiorentini, F Bernardini, O Ambacher Applied physics letters 80 (7), 1204-1206, 2002	1048	2002
Effects of macroscopic polarization in III-V nitride multiple quantum wells V Fiorentini, F Bernardini, F Della Sala, A Di Carlo, P Lugli Physical Review B 60 (12), 8849, 1999	695	1999
First-principles prediction of structure, energetics, formation enthalpy, elastic constants, polarization, and piezoelectric constants of AlN, GaN, and InN: Comparison of local … A Zoroddu, F Bernardini, P Ruggerone, V Fiorentini Physical Review B 64 (4), 045208, 2001	617	2001
Macroscopic polarization and band offsets at nitride heterojunctions F Bernardini, V Fiorentini Physical Review B 57 (16), R9427, 1998	544	1998
Extracting convergent surface energies from slab calculations V Fiorentini, M Methfessel Journal of Physics: Condensed Matter 8 (36), 6525, 1996	509	1996
Nonlinear macroscopic polarization in III-V nitride alloys F Bernardini, V Fiorentini Physical Review B 64 (8), 085207, 2001	437	2001
Spontaneous versus piezoelectric polarization in III–V nitrides: conceptual aspects and practical consequences F Bernardini, V Fiorentini physica status solidi (b) 216 (1), 391-398, 1999	421	1999
Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures F Della Sala, A Di Carlo, P Lugli, F Bernardini, V Fiorentini, R Scholz, ... Applied physics letters 74 (14), 2002-2004, 1999	389	1999
Reconstruction mechanism of fcc transition metal (001) surfaces V Fiorentini, M Methfessel, M Scheffler Physical review letters 71 (7), 1051, 1993	319	1993
Polarization-based calculation of the dielectric tensor of polar crystals F Bernardini, V Fiorentini, D Vanderbilt Physical review letters 79 (20), 3958, 1997	297	1997
Accurate calculation of polarization-related quantities in semiconductors F Bernardini, V Fiorentini, D Vanderbilt Physical Review B 63 (19), 193201, 2001	294	2001
Electronic and structural properties of GaN by the full-potential linear muffin-tin orbitals method: The role of the d electrons V Fiorentini, M Methfessel, M Scheffler Physical Review B 47 (20), 13353, 1993	259	1993
Spontaneous 2-Dimensional Carrier Confinement at the -Type Interface P Delugas, A Filippetti, V Fiorentini, DI Bilc, D Fontaine, P Ghosez Physical review letters 106 (16), 166807, 2011	250	2011
Theoretical evaluation of zirconia and hafnia as gate oxides for Si microelectronics V Fiorentini, G Gulleri Physical review letters 89 (26), 266101, 2002	205	2002
Dielectric scaling of the self-energy scissor operator in semiconductors and insulators V Fiorentini, A Baldereschi Physical Review B 51 (23), 17196, 1995	191	1995
Phase diagram and polarization of stable phases of (Ga1− xInx) 2O3 MB Maccioni, V Fiorentini Applied physics express 9 (4), 041102, 2016	169	2016
Theory of adsorption and surfactant effect of Sb on Ag (111) S Oppo, V Fiorentini, M Scheffler Physical review letters 71 (15), 2437, 1993	167	1993
First-principles calculation of the piezoelectric tensor of III–V nitrides F Bernardini, V Fiorentini Applied physics letters 80 (22), 4145-4147, 2002	162	2002

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