Vincenzo Fiorentini
Vincenzo Fiorentini
Associate professor of condensed matter physics, University of Cagliari, Italy
Verified email at dsf.unica.it - Homepage
TitleCited byYear
Spontaneous polarization and piezoelectric constants of III-V nitrides
F Bernardini, V Fiorentini, D Vanderbilt
Physical Review B 56 (16), R10024, 1997
30911997
Pyroelectric properties of Al (In) GaN/GaN hetero-and quantum well structures
O Ambacher, J Majewski, C Miskys, A Link, M Hermann, M Eickhoff, ...
Journal of physics: condensed matter 14 (13), 3399, 2002
10172002
Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures
V Fiorentini, F Bernardini, O Ambacher
applied physics letters 80 (7), 1204-1206, 2002
7332002
Effects of macroscopic polarization in III-V nitride multiple quantum wells
V Fiorentini, F Bernardini, F Della Sala, A Di Carlo, P Lugli
Physical Review B 60 (12), 8849, 1999
5461999
Macroscopic polarization and band offsets at nitride heterojunctions
F Bernardini, V Fiorentini
Physical Review B 57 (16), R9427, 1998
4571998
First-principles prediction of structure, energetics, formation enthalpy, elastic constants, polarization, and piezoelectric constants of AlN, GaN, and InN: Comparison of local …
A Zoroddu, F Bernardini, P Ruggerone, V Fiorentini
Physical Review B 64 (4), 045208, 2001
4552001
Nonlinear macroscopic polarization in III-V nitride alloys
F Bernardini, V Fiorentini
Physical Review B 64 (8), 085207, 2001
3492001
Spontaneous versus piezoelectric polarization in III–V nitrides: conceptual aspects and practical consequences
F Bernardini, V Fiorentini
physica status solidi (b) 216 (1), 391-398, 1999
3431999
Extracting convergent surface energies from slab calculations
V Fiorentini, M Methfessel
Journal of Physics: Condensed Matter 8 (36), 6525, 1996
3331996
Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures
F Della Sala, A Di Carlo, P Lugli, F Bernardini, V Fiorentini, R Scholz, ...
Applied physics letters 74 (14), 2002-2004, 1999
3201999
Reconstruction mechanism of fcc transition metal (001) surfaces
V Fiorentini, M Methfessel, M Scheffler
Physical Review Letters 71 (7), 1051, 1993
2971993
Polarization-based calculation of the dielectric tensor of polar crystals
F Bernardini, V Fiorentini, D Vanderbilt
Physical review letters 79 (20), 3958, 1997
2561997
Electronic and structural properties of GaN by the full-potential linear muffin-tin orbitals method: The role of the d electrons
V Fiorentini, M Methfessel, M Scheffler
Physical Review B 47 (20), 13353, 1993
2331993
Accurate calculation of polarization-related quantities in semiconductors
F Bernardini, V Fiorentini, D Vanderbilt
Physical Review B 63 (19), 193201, 2001
2142001
Spontaneous 2-dimensional carrier confinement at the n-type SrTiO 3/LaAlO 3 interface
P Delugas, A Filippetti, V Fiorentini, DI Bilc, D Fontaine, P Ghosez
Physical review letters 106 (16), 166807, 2011
1952011
Theoretical evaluation of zirconia and hafnia as gate oxides for Si microelectronics
V Fiorentini, G Gulleri
Physical review letters 89 (26), 266101, 2002
1852002
Theory of adsorption and surfactant effect of Sb on Ag (111)
S Oppo, V Fiorentini, M Scheffler
Physical review letters 71 (15), 2437, 1993
1451993
First-principles calculation of the piezoelectric tensor of III–V nitrides
F Bernardini, V Fiorentini
Applied physics letters 80 (22), 4145-4147, 2002
1302002
Progress and prospects for GaN and the Ⅲ-Ⅴ nitride semicoductor
F Bernardini, V Fiorentini, D Vanderbilt
Phys Rev B 56 (16), R10-024, 1997
1231997
Structure and stability of rare-earth and transition-metal oxides
L Marsella, V Fiorentini
Physical Review B 69 (17), 172103, 2004
1202004
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