Follow
rahul ramaswamy
rahul ramaswamy
University at Buffalo, State univeristy of New York
Verified email at buffalo.edu
Title
Cited by
Cited by
Year
A 14 nm SoC platform technology featuring 2nd generation Tri-Gate transistors, 70 nm gate pitch, 52 nm metal pitch, and 0.0499 um2 SRAM cells, optimized for …
CH Jan, F Al-Amoody, HY Chang, T Chang, YW Chen, N Dias, W Hafez, ...
2015 Symposium on VLSI Technology (VLSI Technology), T12-T13, 2015
1032015
Fin-based thin film resistor
CH Jan, WM Hafez, NL Dias, R Ramaswamy, HY Chang, RW Olac-Vaw, ...
US Patent 10,930,729, 2021
632021
Transistor reliability characterization and comparisons for a 14 nm tri-gate technology optimized for System-on-Chip and foundry platforms
C Prasad, KW Park, M Chahal, I Meric, SR Novak, S Ramey, P Bai, ...
2016 IEEE International Reliability Physics Symposium (IRPS), 4B-5-1-4B-5-8, 2016
272016
Intel 4 CMOS technology featuring advanced FinFET transistors optimized for high density and high-performance computing
B Sell, S An, J Armstrong, D Bahr, B Bains, R Bambery, K Bang, D Basu, ...
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022
262022
Intel PowerVia technology: Backside power delivery for high density and high-performance computing
W Hafez, P Agnihotri, M Asoro, M Aykol, B Bains, R Bambery, M Bapna, ...
2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023
212023
THz hot-electron micro-bolometer based on low-mobility 2-DEG in GaN heterostructure
JK Choi, V Mitin, R Ramaswamy, VA Pogrebnyak, MP Pakmehr, ...
IEEE Sensors Journal 13 (1), 80-88, 2012
212012
Transistor gate metal with laterally graduated work function
CH Jan, W Hafez, HY Chang, OVAW Roman, T Chang, R Ramaswamy, ...
US Patent 10,192,969, 2019
172019
E-core implementation in Intel 4 with powervia (backside power) technology
M Shamanna, E Abuayob, G Aenuganti, C Alvares, J Antony, ...
2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023
132023
Low leakage non-planar access transistor for embedded dynamic random access memory (eDRAM)
J Park, G Bhimarasetti, R Ramaswamy, CH Jan, WM Hafez, JYD Yeh, ...
US Patent 9,741,721, 2017
112017
Gate-all-around integrated circuit structures having dual nanoribbon channel structures
T Trivedi, R Ramaswamy, JD Kim, B Fallahazad, HY Chang, T Chang, ...
US Patent 11,437,483, 2022
82022
Multi-gate transistor with variably sized fin
N Nidhi, CH Jan, RW Olac-Vaw, HY Chang, NL Dias, WM Hafez, ...
US Patent 9,947,585, 2018
72018
Integration of iii-n transistors and polysilicon resistors
M Radosavljevic, HW Then, S Dasgupta, PB Fischer, N Nidhi, ...
US Patent App. 16/249,256, 2020
62020
2DEG GaN hot electron microbolometers and quantum cascade lasers for THz heterodyne sensing
R Ramaswamy, K Wang, A Stier, A Muraviev, G Strasser, A Markelz, ...
Micro-and Nanotechnology Sensors, Systems, and Applications III 8031, 145-159, 2011
62011
III-N tunnel device architectures and high frequency mixers employing a III-N tunnel device
R Ramaswamy, WM Hafez, M Radosavljevic, S Dasgupta, HW Then, ...
US Patent 11,387,328, 2022
52022
Nanoribbon thick gate devices with differential ribbon spacing and width for soc applications
T Trivedi, R Ramaswamy, JD Kim, T Chang, WM Hafez, B Fallahazad, ...
US Patent App. 16/713,684, 2021
52021
Maskless process for fabricating gate structures and schottky diodes
R Ramaswamy, N Nidhi, WM Hafez, JC Rode, P Fischer, HW Then, ...
US Patent App. 16/239,059, 2020
52020
Transistors with ion-or fixed charge-based field plate structures
HW Then, M Radosavljevic, GA Glass, S Dasgupta, N Nidhi, PB Fischer, ...
US Patent 11,658,217, 2023
42023
Integration of III-N transistors and non-III-N transistors by semiconductor regrowth
S Dasgupta, JC Rode, HW Then, M Radosavljevic, PB Fischer, N Nidhi, ...
US Patent 11,581,313, 2023
42023
Integration of Si-based transistors with non-Si technologies by semiconductor regrowth over an insulator material
N Nidhi, HW Then, M Radosavljevic, S Dasgupta, PB Fischer, ...
US Patent App. 16/390,478, 2020
42020
Microwave heterodyne receiver based on AlGaAs/GaAs 2DEG bolometer
K Wang, R Ramaswamy, M Bell, A Sergeev, G Strasser, A Verevkin, ...
35th International Conference on Infrared, Millimeter, and Terahertz Waves, 1-2, 2010
42010
The system can't perform the operation now. Try again later.
Articles 1–20