| Electron trap generation in thermally grown SiO2 under Fowler–Nordheim stress JF Zhang, S Taylor, W Eccleston Journal of applied physics 71 (2), 725-734, 1992 | 158 | 1992 |
| THEORETICAL INVESTIGATION OF A 2 KA DC NITROGEN ARC IN A SUPERSONIC NOZZLE JF ZHANG, MTC FANG, DB NEWLAND Journal of Physics D-Applied Physics, 0 | 156* | |
| Positive bias temperature instability in MOSFETs JF Zhang, W Eccleston IEEE Transactions on Electron Devices 45 (1), 116-124, 1998 | 111 | 1998 |
| Hole traps in silicon dioxides. Part I. Properties JF Zhang, CZ Zhao, AH Chen, G Groeseneken, R Degraeve IEEE Transactions on Electron Devices 51 (8), 1267-1273, 2004 | 98 | 2004 |
| A review of the plasma oxidation of silicon and its applications S Taylor, JF Zhang, W Eccleston Semiconductor science and technology 8 (7), 1426, 1993 | 98 | 1993 |
| The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM N Sedghi, H Li, IF Brunell, K Dawson, RJ Potter, Y Guo, JT Gibbon, ... Applied Physics Letters 110 (10), 2017 | 84 | 2017 |
| A comparative study of the electron trapping and thermal detrapping in SiO2 prepared by plasma and thermal oxidation JF Zhang, S Taylor, W Eccleston Journal of applied physics 72 (4), 1429-1435, 1992 | 84 | 1992 |
| Hole trapping and trap generation in the gate silicon dioxide JF Zhang, HK Sii, G Groeseneken, R Degraeve IEEE Transactions on Electron Devices 48 (6), 1127-1135, 2001 | 79 | 2001 |
| A quantitative investigation of electron detrapping in SiO2 under Fowler–Nordheim stress JF Zhang, S Taylor, W Eccleston Journal of applied physics 71 (12), 5989-5996, 1992 | 75 | 1992 |
| NBTI lifetime prediction and kinetics at operation bias based on ultrafast pulse measurement Z Ji, L Lin, JF Zhang, B Kaczer, G Groeseneken IEEE Transactions on Electron Devices 57 (1), 228-237, 2009 | 70 | 2009 |
| Stress-induced positive charge in Hf-based gate dielectrics: Impact on device performance and a framework for the defect CZ Zhao, JF Zhang, MH Chang, AR Peaker, S Hall, G Groeseneken, ... IEEE Transactions on Electron Devices 55 (7), 1647-1656, 2008 | 69 | 2008 |
| Two-Pulse – : A New Method for Characterizing Electron Traps in the Bulk of Dielectric Stacks WD Zhang, B Govoreanu, XF Zheng, DR Aguado, M Rosmeulen, ... IEEE Electron Device Letters 29 (9), 1043-1046, 2008 | 63 | 2008 |
| Real Vth instability of pMOSFETs under practical operation conditions JF Zhang, Z Ji, MH Chang, B Kaczer, G Groeseneken 2007 IEEE International Electron Devices Meeting, 817-820, 2007 | 62 | 2007 |
| Hole-traps in silicon dioxides. Part II. Generation mechanism CZ Zhao, JF Zhang, G Groeseneken, R Degraeve IEEE Transactions on Electron Devices 51 (8), 1274-1280, 2004 | 60 | 2004 |
| Energy distribution of positive charges in gate dielectric: Probing technique and impacts of different defects SWM Hatta, Z Ji, JF Zhang, M Duan, WD Zhang, N Soin, B Kaczer, ... IEEE Transactions on Electron Devices 60 (5), 1745-1753, 2013 | 58 | 2013 |
| Impact of RTN on pattern recognition accuracy of RRAM-based synaptic neural network Z Chai, P Freitas, W Zhang, F Hatem, JF Zhang, J Marsland, B Govoreanu, ... IEEE Electron Device Letters 39 (11), 1652-1655, 2018 | 56 | 2018 |
| Defects and instabilities in Hf-dielectric/SiON stacks JF Zhang Microelectronic engineering 86 (7-9), 1883-1887, 2009 | 56 | 2009 |
| An analysis of the NBTI-induced threshold voltage shift evaluated by different techniques Z Ji, JF Zhang, MH Chang, B Kaczer, G Groeseneken IEEE Transactions on Electron Devices 56 (5), 1086-1093, 2009 | 56 | 2009 |
| A single pulse charge pumping technique for fast measurements of interface states L Lin, Z Ji, JF Zhang, WD Zhang, B Kaczer, S De Gendt, G Groeseneken IEEE Transactions on Electron Devices 58 (5), 1490-1498, 2011 | 54 | 2011 |
| Traps JF Zhang Wiley Encyclopedia of Electrical and Electronics Engineering, 1-10, 1999 | 54 | 1999 |
Wei Dong ZhangProfessor of Nanoelectronics, Liverpool John Moores UniversityVerified email at ljmu.ac.uk
