Robert Martin
Robert Martin
Professor of Physics, Strathclyde University
Verified email at
Cited by
Cited by
Origin of luminescence from InGaN diodes
KP O'donnell, RW Martin, PG Middleton
Physical Review Letters 82 (1), 237, 1999
The 2020 UV emitter roadmap
H Amano, R Collazo, C De Santi, S Einfeldt, M Funato, J Glaab, ...
Journal of Physics D: Applied Physics 53 (50), 503001, 2020
Exciton localization and the Stokes’ shift in InGaN epilayers
RW Martin, PG Middleton, KP O’donnell, W Van der Stricht
Applied physics letters 74 (2), 263-265, 1999
Mechanism of enhanced light output efficiency in InGaN-based microlight emitting diodes
HW Choi, CW Jeon, MD Dawson, PR Edwards, RW Martin, S Tripathy
Journal of Applied Physics 93 (10), 5978-5982, 2003
Anomalous Ion Channeling in Bilayers: Determination of the Strain State
K Lorenz, N Franco, E Alves, IM Watson, RW Martin, KP O’donnell
Physical review letters 97 (8), 085501, 2006
An organic down-converting material for white-light emission from hybrid LEDs
NJ Findlay, J Bruckbauer, AR Inigo, B Breig, S Arumugam, DJ Wallis, ...
Advanced Materials (Deerfield Beach, Fla.) 26 (43), 7290, 2014
Optical properties of high quality Cu2ZnSnSe4 thin films
F Luckert, DI Hamilton, MV Yakushev, NS Beattie, G Zoppi, M Moynihan, ...
Applied Physics Letters 99 (6), 2011
Identification of the prime optical center in
IS Roqan, KP O'Donnell, RW Martin, PR Edwards, SF Song, A Vantomme, ...
Physical Review B—Condensed Matter and Materials Physics 81 (8), 085209, 2010
High extraction efficiency InGaN micro-ring light-emitting diodes
HW Choi, MD Dawson, PR Edwards, RW Martin
Applied physics letters 83 (22), 4483-4485, 2003
Raman-scattering study of the InGaN alloy over the whole composition range
S Hernández, R Cuscó, D Pastor, L Artús, KP O’Donnell, RW Martin, ...
Journal of Applied Physics 98 (1), 2005
Structural analysis of InGaN epilayers
KP O'Donnell, JFW Mosselmans, RW Martin, S Pereira, ME White
Journal of Physics: Condensed Matter 13 (32), 6977, 2001
Two-dimensional spin confinement in strained-layer quantum wells
PJW RW Martin, RJ Nicholas, GJ Rees, SK Haywood, NJ Mason
Phys. Rev. B 42, 9237, 1990
Selectively excited photoluminescence from Eu-implanted GaN
K Wang, RW Martin, KP O’Donnell, V Katchkanov, E Nogales, K Lorenz, ...
Applied Physics Letters 87 (11), 2005
Cathodoluminescence nano-characterization of semiconductors
PR Edwards, RW Martin
Semiconductor Science and Technology 26 (6), 064005, 2011
Optical energies of AlInN epilayers
K Wang, RW Martin, D Amabile, PR Edwards, S Hernandez, E Nogales, ...
Journal of Applied Physics 103 (7), 2008
High resolution cathodoluminescence hyperspectral imaging of surface features in InGaN/GaN multiple quantum well structures
J Bruckbauer, PR Edwards, T Wang, RW Martin
Applied Physics Letters 98 (14), 2011
High-temperature annealing and optical activation of Eu-implanted GaN
K Lorenz, U Wahl, E Alves, S Dalmasso, RW Martin, KP O'Donnell, ...
Applied physics letters 85 (14), 2712-2714, 2004
Highly mismatched crystalline and amorphous GaN1− xAsx alloys in the whole composition range
KM Yu, SV Novikov, R Broesler, IN Demchenko, JD Denlinger, ...
Journal of Applied Physics 106 (10), 2009
Composition-dependent band gap and band-edge bowing in AlInN: A combined theoretical and experimental study
S Schulz, MA Caro, LT Tan, PJ Parbrook, RW Martin, EP O'Reilly
Applied Physics Express 6 (12), 121001, 2013
Charge carrier localised in zero-dimensional (CH3NH3)3Bi2I9 clusters
C Ni, G Hedley, J Payne, V Svrcek, C McDonald, LK Jagadamma, ...
Nature communications 8 (1), 170, 2017
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