| Growth and band gap control of corundum-structured α-(AlGa) 2O3 thin films on sapphire by spray-assisted mist chemical vapor deposition H Ito, K Kaneko, S Fujita Japanese Journal of Applied Physics 51 (10R), 100207, 2012 | 173 | 2012 |
| Evaluation of misfit relaxation in α-Ga2O3 epitaxial growth on α-Al2O3 substrate K Kaneko, H Kawanowa, H Ito, S Fujita Japanese Journal of Applied Physics 51 (2R), 020201, 2012 | 167 | 2012 |
| Epitaxial growth of corundum-structured wide band gap III-oxide semiconductor thin films S Fujita, K Kaneko Journal of crystal growth 401, 588-592, 2014 | 161 | 2014 |
| Evolution of corundum-structured III-oxide semiconductors: Growth, properties, and devices S Fujita, M Oda, K Kaneko, T Hitora Japanese Journal of Applied Physics 55 (12), 1202A3, 2016 | 139 | 2016 |
| Fabrication of highly crystalline corundum-structured α-(Ga1-xFex) 2O3 alloy thin films on sapphire substrates K Kaneko, T Nomura, I Kakeya, S Fujita Applied physics express 2 (7), 075501, 2009 | 120 | 2009 |
| Conductivity control of Sn-doped α-Ga2O3 thin films grown on sapphire substrates K Akaiwa, K Kaneko, K Ichino, S Fujita Japanese Journal of Applied Physics 55 (12), 1202BA, 2016 | 116 | 2016 |
| A power device material of corundum-structured α-Ga2O3 fabricated by MIST EPITAXY® technique K Kaneko, S Fujita, T Hitora Japanese Journal of Applied Physics 57 (2S2), 02CB18, 2018 | 113 | 2018 |
| Homoepitaxial growth of beta gallium oxide films by mist chemical vapor deposition S Lee, K Kaneko, S Fujita Japanese Journal of Applied Physics 55 (12), 1202B8, 2016 | 97 | 2016 |
| Reduction in edge dislocation density in corundum-structured α-Ga2O3 layers on sapphire substrates with quasi-graded α-(Al, Ga) 2O3 buffer layers R Jinno, T Uchida, K Kaneko, S Fujita Applied Physics Express 9 (7), 071101, 2016 | 88 | 2016 |
| Electrical properties of α-Ir2O3/α-Ga2O3 pn heterojunction diode and band alignment of the heterostructure S Kan, S Takemoto, K Kaneko, I Takahashi, M Sugimoto, T Shinohe, ... Applied Physics Letters 113 (21), 2018 | 84 | 2018 |
| Growth characteristics of corundum-structured α-(AlxGa1− x) 2O3/Ga2O3 heterostructures on sapphire substrates K Kaneko, K Suzuki, Y Ito, S Fujita Journal of Crystal Growth 436, 150-154, 2016 | 84 | 2016 |
| Enhanced thermal stability of alpha gallium oxide films supported by aluminum doping SD Lee, Y Ito, K Kaneko, S Fujita Japanese Journal of Applied Physics 54 (3), 030301, 2015 | 82 | 2015 |
| Band gap and function engineering for novel functional alloy semiconductors: Bloomed as magnetic properties at room temperature with α-(GaFe) 2O3 K Kaneko, I Kakeya, S Komori, S Fujita Journal of Applied Physics 113 (23), 2013 | 77 | 2013 |
| Growth of corundum-structured In2O3 thin films on sapphire substrates with Fe2O3 buffer layers N Suzuki, K Kaneko, S Fujita Journal of crystal growth 364, 30-33, 2013 | 77 | 2013 |
| Evaluation of band alignment of α-Ga2O3/α-(AlxGa1− x) 2O3 heterostructures by X-ray photoelectron spectroscopy T Uchida, R Jinno, S Takemoto, K Kaneko, S Fujita Japanese Journal of Applied Physics 57 (4), 040314, 2018 | 63 | 2018 |
| Electrical, optical, and magnetic properties of Sn doped α-Ga2O3 thin films E Chikoidze, HJ Von Bardeleben, K Akaiwa, E Shigematsu, K Kaneko, ... Journal of Applied Physics 120 (2), 2016 | 62 | 2016 |
| Electrical characterization of Si-doped n-type α-Ga2O3 on sapphire substrates T Uchida, K Kaneko, S Fujita MRS Advances 3, 171-177, 2018 | 52 | 2018 |
| Growth of corundum-structured (InxGa1− x) 2O3 alloy thin films on sapphire substrates with buffer layers N Suzuki, K Kaneko, S Fujita Journal of crystal growth 401, 670-672, 2014 | 51 | 2014 |
| Corundum‐structured α‐phase Ga2O3‐Cr2O3‐Fe2O3 alloy system for novel functions K Kaneko, T Nomura, S Fujita physica status solidi c 7 (10), 2467-2470, 2010 | 49 | 2010 |
| Control of Crystal Structure of Ga2O3 on Sapphire Substrate by Introduction of α‐(AlxGa1−x)2O3 Buffer Layer R Jinno, T Uchida, K Kaneko, S Fujita physica status solidi (b) 255 (4), 1700326, 2018 | 47 | 2018 |
Riena JinnoUniversity of TokyoVerified email at g.ecc.u-tokyo.ac.jp
