Tunable infrared plasmonic devices using graphene/insulator stacks H Yan, X Li, B Chandra, G Tulevski, Y Wu, M Freitag, W Zhu, P Avouris, ... Nature nanotechnology 7 (5), 330-334, 2012 | 1361 | 2012 |
High-frequency, scaled graphene transistors on diamond-like carbon Y Wu, Y Lin, AA Bol, KA Jenkins, F Xia, DB Farmer, Y Zhu, P Avouris Nature 472 (7341), 74-78, 2011 | 1163 | 2011 |
Wafer-scale graphene integrated circuit YM Lin, A Valdes-Garcia, SJ Han, DB Farmer, I Meric, Y Sun, Y Wu, ... Science 332 (6035), 1294-1297, 2011 | 1158 | 2011 |
Damping pathways of mid-infrared plasmons in graphene nanostructures H Yan, T Low, W Zhu, Y Wu, M Freitag, X Li, F Guinea, P Avouris, F Xia Nature Photonics 7 (5), 394-399, 2013 | 1013 | 2013 |
The origins and limits of metal–graphene junction resistance F Xia, V Perebeinos, Y Lin, Y Wu, P Avouris Nature nanotechnology 6 (3), 179-184, 2011 | 980 | 2011 |
State-of-the-art graphene high-frequency electronics Y Wu, KA Jenkins, A Valdes-Garcia, DB Farmer, Y Zhu, AA Bol, ... Nano letters 12 (6), 3062-3067, 2012 | 561 | 2012 |
InP-based transistor fabrication P Ye, Z Cheng, Y Xuan, Y Wu, B Adekore, J Fiorenza US Patent 8,329,541, 2012 | 518 | 2012 |
Broadband black-phosphorus photodetectors with high responsivity M Huang, M Wang, C Chen, Z Ma, X Li, J Han, Y Wu Adv. Mater 28 (18), 3481-3485, 2016 | 464 | 2016 |
High-performance inversion-type enhancement-mode InGaAs MOSFET with maximum drain current exceeding 1 A/mm Y Xuan, YQ Wu, PD Ye IEEE Electron Device Letters 29 (4), 294-296, 2008 | 415 | 2008 |
Multifunctional high-performance van der Waals heterostructures M Huang, S Li, Z Zhang, X Xiong, X Li, Y Wu Nature nanotechnology 12 (12), 1148-1154, 2017 | 342 | 2017 |
Top-gated graphene field-effect-transistors formed by decomposition of SiC YQ Wu, PD Ye, MA Capano, Y Xuan, Y Sui, M Qi, JA Cooper, T Shen, ... Applied Physics Letters 92 (9), 2008 | 308 | 2008 |
Atomic-layer-deposited nanostructures for graphene-based nanoelectronics Y Xuan, YQ Wu, T Shen, M Qi, MA Capano, JA Cooper, PD Ye Applied Physics Letters 92 (1), 2008 | 301 | 2008 |
Nanometre-thin indium tin oxide for advanced high-performance electronics S Li, M Tian, Q Gao, M Wang, T Li, Q Hu, X Li, Y Wu Nature materials 18 (10), 1091-1097, 2019 | 291 | 2019 |
Submicrometer Inversion-Type Enhancement-Mode InGaAs MOSFET With Atomic-Layer-Depositedas Gate Dielectric Y Xuan, YQ Wu, HC Lin, T Shen, DY Peide IEEE Electron Device Letters 28 (11), 935-938, 2007 | 223 | 2007 |
Three-terminal graphene negative differential resistance devices Y Wu, DB Farmer, W Zhu, SJ Han, CD Dimitrakopoulos, AA Bol, P Avouris, ... ACS nano 6 (3), 2610-2616, 2012 | 199 | 2012 |
Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001) T Shen, JJ Gu, M Xu, YQ Wu, ML Bolen, MA Capano, LW Engel, PD Ye Applied Physics Letters 95 (17), 2009 | 181 | 2009 |
High performance submicron inversion-type enhancement-mode InGaAs MOSFETs with ALD Al2O3, HfO2and HfAlO as gate dielectrics Y Xuan, YQ Wu, T Shen, T Yang, PD Ye 2007 IEEE International Electron Devices Meeting, 637-640, 2007 | 165 | 2007 |
Graphene electronics: Materials, devices, and circuits Y Wu, DB Farmer, F Xia, P Avouris Proceedings of the IEEE 101 (7), 1620-1637, 2013 | 162 | 2013 |
Highly Anisotropic Sb2Se3 Nanosheets: Gentle Exfoliation from the Bulk Precursors Possessing 1D Crystal Structure H Song, T Li, J Zhang, Y Zhou, J Luo, C Chen, B Yang, C Ge, Y Wu, ... Advanced Materials 29 (29), 1700441, 2017 | 150 | 2017 |
First experimental demonstration of gate-all-around III–V MOSFETs by top-down approach JJ Gu, YQ Liu, YQ Wu, R Colby, RG Gordon, PD Ye 2011 International Electron Devices Meeting, 33.2. 1-33.2. 4, 2011 | 143 | 2011 |