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Zheng Chen
Zheng Chen
Danfoss Silicon Power
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Cited by
Year
A 1200-V, 60-A SiC MOSFET multichip phase-leg module for high-temperature, high-frequency applications
Z Chen, Y Yao, D Boroyevich, KDT Ngo, P Mattavelli, K Rajashekara
IEEE Transactions on Power Electronics 29 (5), 2307-2320, 2014
3142014
Experimental parametric study of the parasitic inductance influence on MOSFET switching characteristics
Z Chen, D Boroyevich, R Burgos
The 2010 International Power Electronics Conference-ECCE ASIA-, 164-169, 2010
2702010
Characterization and modeling of high-switching-speed behavior of SiC active devices
Z Chen
Virginia Polytechnic Institute and State University, 2009
2662009
Characterization and modeling of 1.2 kv, 20 A SiC MOSFETs
Z Chen, D Boroyevich, R Burgos, F Wang
2009 IEEE Energy Conversion Congress and Exposition, 1480-1487, 2009
2072009
Evaluation of the switching characteristics of a gallium-nitride transistor
M Danilovic, Z Chen, R Wang, F Luo, D Boroyevich, P Mattavelli
2011 IEEE Energy Conversion Congress and Exposition, 2681-2688, 2011
1642011
Investigation of 1.2 kV SiC MOSFET for high frequency high power applications
H Sheng, Z Chen, F Wang, A Millner
2010 Twenty-Fifth Annual IEEE Applied Power Electronics Conference and …, 2010
1092010
A frequency-domain study on the effect of DC-link decoupling capacitors
Z Chen, D Boroyevich, P Mattavelli, K Ngo
2013 IEEE Energy Conversion Congress and Exposition, 1886-1893, 2013
982013
High-temperature characterization and comparison of 1.2 kV SiC power MOSFETs
C DiMarino, Z Chen, M Danilovic, D Boroyevich, R Burgos, P Mattavelli
2013 IEEE Energy Conversion Congress and Exposition, 3235-3242, 2013
852013
Performance evaluation of SiC power MOSFETs for high-temperature applications
Z Chen, Y Yao, M Danilovic, D Boroyevich
2012 15th International Power Electronics and Motion Control Conference (EPE …, 2012
832012
Characterization of encapsulants for high-voltage high-temperature power electronic packaging
Y Yao, Z Chen, GQ Lu, D Boroyevich, KDT Ngo
IEEE Transactions on Components, Packaging and Manufacturing Technology 2 (4 …, 2012
752012
A novel hybrid packaging structure for high-temperature SiC power modules
R Wang, Z Chen, D Boroyevich, L Jiang, Y Yao, K Rajashekara
IEEE Transactions on Industry Applications 49 (4), 1609-1618, 2013
732013
An adaptive dead-time control scheme for high-switching-frequency dual-active-bridge converter
J Li, Z Chen, Z Shen, P Mattavelli, J Liu, D Boroyevich
2012 Twenty-Seventh Annual IEEE Applied Power Electronics Conference and …, 2012
732012
Design considerations for GaN HEMT multichip halfbridge module for high-frequency power converters
F Luo, Z Chen, L Xue, P Mattavelli, D Boroyevich, B Hughes
2014 IEEE Applied Power Electronics Conference and Exposition-APEC 2014, 537-544, 2014
672014
Design considerations of a fast 0-Ω gate-drive circuit for 1.2 kV SiC JFET devices in phase-leg configuration
R Burgos, Z Chen, D Boroyevich, F Wang
2009 IEEE Energy Conversion Congress and Exposition, 2293-2300, 2009
602009
Modeling and simulation of 2 kV 50 A SiC MOSFET/JBS power modules
Z Chen, R Burgos, D Boroyevich, F Wang, S Leslie
Electric Ship Technologies Symposium, 2009. ESTS 2009. IEEE, 393-399, 2009
592009
An ultra-fast SiC phase-leg module in modified hybrid packaging structure
Z Chen, Y Yao, D Boroyevich, K Ngo, W Zhang
2014 IEEE Energy Conversion Congress and Exposition (ECCE), 2880-2886, 2014
552014
Modularized design consideration of a general-purpose, high-speed phase-leg PEBB based on SiC MOSFETs
Z Chen, M Danilovic, D Boroyevich, Z Shen
Proceedings of the 2011 14th European Conference on Power Electronics and …, 2011
532011
Development of a 1200 V, 120 A SiC MOSFET module for high-temperature and high-frequency applications
Z Chen, Y Yao, W Zhang, D Boroyevich, K Ngo, P Mattavelli, R Burgos
the 1st IEEE workshop on wide bandgap power devices and applications, 52-59, 2013
522013
Electrical integration of SiC power devices for High-Power-Density applications
Z Chen
Virginia Polytechnic Institute and State University, 2013
442013
Characterization and comparison of 1.2 kV SiC power semiconductor devices
C DiMarino, Z Chen, D Boroyevich, R Burgos, P Mattavelli
2013 15th European Conference on Power Electronics and Applications (EPE), 1-10, 2013
432013
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