Michael Mastro
Michael Mastro
US Naval Research Lab
Verified email at nrl.navy.mil
TitleCited byYear
A review of Ga2O3 materials, processing, and devices
SJ Pearton, J Yang, PH Cary IV, F Ren, J Kim, MJ Tadjer, MA Mastro
Applied Physics Reviews 5 (1), 011301, 2018
2922018
Technique for the dry transfer of epitaxial graphene onto arbitrary substrates
JD Caldwell, TJ Anderson, JC Culbertson, GG Jernigan, KD Hobart, ...
ACS nano 4 (2), 1108-1114, 2010
2052010
Film on Graphene on a Substrate and Method and Devices Therefor
F Kub, T Anderson, M Mastro
US Patent App. 13/310,347, 2012
1542012
Perspective—opportunities and future directions for Ga2O3
MA Mastro, A Kuramata, J Calkins, J Kim, F Ren, SJ Pearton
ECS Journal of Solid State Science and Technology 6 (5), P356-P359, 2017
1342017
Group III-nitride growth on silicon or silicon germanium substrates and method and devices therefor
MA Mastro, CR Eddy Jr, S Akbar
US Patent 7,928,471, 2011
1252011
Surface depletion effects in semiconducting nanowires
BS Simpkins, MA Mastro, CR Eddy Jr, PE Pehrsson
Journal of Applied Physics 103 (10), 104313, 2008
1132008
III–V compound semiconductors: integration with silicon-based microelectronics
T Li, M Mastro, A Dadgar
CRC press, 2010
1022010
Large-area transparent conductive few-layer graphene electrode in GaN-based ultra-violet light-emitting diodes
BJ Kim, C Lee, Y Jung, K Hyeon Baik, MA Mastro, JK Hite, CR Eddy Jr, ...
Applied Physics Letters 99 (14), 143101, 2011
932011
Reduced self-heating in AlGaN/GaN HEMTs using nanocrystalline diamond heat-spreading films
MJ Tadjer, TJ Anderson, KD Hobart, TI Feygelson, JD Caldwell, CR Eddy, ...
IEEE Electron Device Letters 33 (1), 23-25, 2011
832011
Exfoliated β-Ga 2 O 3 nano-belt field-effect transistors for air-stable high power and high temperature electronics
J Kim, S Oh, MA Mastro, J Kim
Physical Chemistry Chemical Physics 18 (23), 15760-15764, 2016
822016
Assessment of GaN surface pretreatment for atomic layer deposited high-k dielectrics
N Nepal, NY Garces, DJ Meyer, JK Hite, MA Mastro, CR Eddy Jr
Applied physics express 4 (5), 055802, 2011
722011
Transistor with enhanced channel charge inducing material layer and threshold voltage control
FJ Kub, KD Hobart, CR Eddy Jr, MA Mastro, T Anderson
US Patent 8,384,129, 2013
702013
Self-assembled monolayers of alkylphosphonic acid on GaN substrates
T Ito, SM Forman, C Cao, F Li, CR Eddy Jr, MA Mastro, RT Holm, ...
Langmuir 24 (13), 6630-6635, 2008
702008
Structural, Optical, and Electrical Characterization of Monoclinic β-Ga2O3 Grown by MOVPE on Sapphire Substrates
MJ Tadjer, MA Mastro, NA Mahadik, M Currie, VD Wheeler, JA Freitas, ...
Journal of Electronic Materials 45 (4), 2031-2037, 2016
632016
Effect of front and back gates on β-Ga2O3 nano-belt field-effect transistors
S Ahn, F Ren, J Kim, S Oh, J Kim, MA Mastro, SJ Pearton
Applied Physics Letters 109 (6), 062102, 2016
562016
Cu2ZnSnS4 polycrystalline thin films with large densely packed grains prepared by sol-gel method
M Jiang, Y Li, R Dhakal, PS Thapaliya, MA Mastro, J Caldwell, FJ Kub, ...
Journal of Photonics for Energy 1 (1), 019501, 2011
562011
Activation of Mg implanted in GaN by multicycle rapid thermal annealing
TJ Anderson, BN Feigelson, FJ Kub, MJ Tadjer, KD Hobart, MA Mastro, ...
Electronics Letters 50 (3), 197-198, 2014
542014
Influence of polarity on GaN thermal stability
MA Mastro, OM Kryliouk, TJ Anderson, A Davydov, A Shapiro
Journal of Crystal Growth 274 (1-2), 38-46, 2005
542005
Growth and characterization of single-crystalline gallium nitride using (1 0 0) LiAlO2 substrates
MD Reed, OM Kryliouk, MA Mastro, TJ Anderson
Journal of crystal growth 274 (1-2), 14-20, 2005
512005
Resolving the Burgers vector for individual GaN dislocations by electron channeling contrast imaging
YN Picard, ME Twigg, JD Caldwell, CR Eddy Jr, MA Mastro, RT Holm
Scripta Materialia 61 (8), 773-776, 2009
492009
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Articles 1–20