Growth, disorder, and physical properties of ZnSnN2 N Feldberg, JD Aldous, WM Linhart, LJ Phillips, K Durose, PA Stampe, ... Applied Physics Letters 103 (4), 2013 | 147 | 2013 |
Band Gap Dependence on Cation Disorder in ZnSnN2Solar Absorber T Veal, N Feldberg, NF Quackenbush, WM Linhart, DO Scanlon, ... Advanced Energy Materials 5 (24), 1501462-1501462, 2015 | 124 | 2015 |
Alloy-free band gap tuning across the visible spectrum RA Makin, K York, SM Durbin, N Senabulya, J Mathis, R Clarke, ... Physical Review Letters 122 (25), 256403, 2019 | 50 | 2019 |
Stabilization of orthorhombic phase in single-crystal ZnSnN2 films N Senabulya, N Feldberg, R Makin, Y Yang, G Shi, CM Jones, ... AIP Advances 6 (7), 2016 | 47 | 2016 |
Growth of ZnSnN2 by Molecular Beam Epitaxy N Feldberg, JD Aldous, PA Stampe, RJ Kennedy, TD Veal, SM Durbin Journal of electronic materials 43, 884-888, 2014 | 40 | 2014 |
ZnSnN2: A new earth-abundant element semiconductor for solar cells N Feldberg, B Keen, JD Aldous, DO Scanlon, PA Stampe, RJ Kennedy, ... 2012 38th IEEE Photovoltaic Specialists Conference, 002524-002527, 2012 | 39 | 2012 |
Spontaneous intercalation of Ga and In bilayers during plasma-assisted molecular beam epitaxy growth of GaN on graphene on SiC N Feldberg, O Klymov, N Garro, A Cros, N Mollard, H Okuno, M Gruart, ... Nanotechnology 30 (37), 375602, 2019 | 18 | 2019 |
Growth of ordered and disordered ZnSnN2 RA Makin, N Senabulya, J Mathis, N Feldberg, P Miska, R Clarke, ... Journal of Vacuum Science & Technology B 35 (2), 2017 | 18 | 2017 |
38th IEEE Photovoltaic Specialists Conference N Feldberg, B Keen, JD Aldous, DO Scanlon, PA Stampe, RJ Kennedy, ... IEEE, 2012 | 10 | 2012 |
Impact of kinetics on the growth of GaN on graphene by plasma-assisted molecular beam epitaxy M Gruart, N Feldberg, B Gayral, C Bougerol, S Pouget, E Bellet-Amalric, ... Nanotechnology 31 (11), 115602, 2019 | 8 | 2019 |
Iii, TY Jen, RS Goldman, TD Veal, and SM Durbin N Feldberg, JD Aldous, WM Linhart, LJ Phillips, K Durose, PA Stampe, ... Appl. Phys. Lett 103, 042109, 2013 | 7 | 2013 |
Growth of zinc-blende GaN on muscovite mica by molecular beam epitaxy B Daudin, F Donatini, C Bougerol, B Gayral, E Bellet-Amalric, ... Nanotechnology 32 (2), 025601, 2020 | 4 | 2020 |
ZnSnN2: Growth and characterization of an earth abundant element material with order dependent properties N Feldberg State University of New York at Buffalo, 2015 | 4 | 2015 |
Erratum:“Stabilization of orthorhombic phase in single-crystal ZnSnN 2 films”[AIP Advances 6, 075019 (2016)] N Senabulya, N Feldberg, R Makin, Y Yang, G Shi, CM Jones, ... AIP Advances 8 (12), 2018 | 1 | 2018 |
Quasi‐strain‐free GaN on van der Waals substrates: the case of graphene and muscovite mica A Cros, S Garcia-Orrit, N Garro, O Klymov, MJ Recio-Carretero, M Gruart, ... Low-Dimensional Materials and Devices 2021 11800, 118000C, 2021 | | 2021 |
Engineering the Band Gap of New Materials for Optoelectronics SM Durbin, R Makin, K York, N Senabulya, J Mathis, R Clarke, N Feldberg, ... | | 2019 |
Zn (Sn, Ge) N2: a new double nitride tunable semiconductor family for LED and solar devices N Beddelem, N Feldberg, S Le Gall, Y Battie, N Rochat, A Goldani, ... Journées Nationales du PhotoVoltaïque (JNPV 2018), 2018 | | 2018 |
Prospective analysis of optoelectronic properties of ZnSnN2 for future tandem solar cells T Perin, N Feldberg, N Fèvre, G Kremer, S Le Gall, B Hyot, A Jaffré, ... 7e Journées Nationales du Photovoltaïque 2017, 2017 | | 2017 |
Study of Zn (Sn, Ge) N2 for optoelectronic applications N Fèvre, N Feldberg, P Miska, EH Dogheche, C Licitra, B Hyot, A Roule 12th International Conference on Nitride Semiconductors ICNS-12, 2017 | | 2017 |
The Study of Zinc Tin Nitride for Possible Thermoelectric and Photovoltaic Applications JW Cenker, JS Dyck, RA Makin, N Feldberg, SM Durbin Bulletin of the American Physical Society 62, 2017 | | 2017 |