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Sung-Nam Lee
Sung-Nam Lee
Korea Polytechnic University
Verified email at kpu.ac.kr
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Year
Semiconductor optoelectronic device and method of fabricating the same
J Son, HY Ryu, T Sakong, H Paek, S Lee
US Patent 7,724,795, 2010
2742010
Enhanced light extraction efficiency of GaN-based light-emitting diodes with ZnO nanorod arrays grown using aqueous solution
KK Kim, S Lee, H Kim, JC Park, SN Lee, Y Park, SJ Park, SW Kim
Applied Physics Letters 94 (7), 2009
1722009
Room-temperature GaN vertical-cavity surface-emitting laser operation in an extended cavity scheme
SH Park, J Kim, H Jeon, T Sakong, SN Lee, S Chae, Y Park, CH Jeong, ...
Applied Physics Letters 83 (11), 2121-2123, 2003
1252003
Characteristics of GaN‐based laser diodes for post‐DVD applications
OH Nam, KH Ha, JS Kwak, SN Lee, KK Choi, TH Chang, SH Chae, ...
physica status solidi (a) 201 (12), 2717-2720, 2004
1132004
High-power GaN-based blue-violet laser diodes with AlGaN∕ GaN multiquantum barriers
SN Lee, SY Cho, HY Ryu, JK Son, HS Paek, T Sakong, T Jang, KK Choi, ...
Applied physics letters 88 (11), 2006
972006
Electrical characteristics of contacts to thin film N-polar n-type GaN
H Kim, JH Ryou, RD Dupuis, SN Lee, Y Park, JW Jeon, TY Seong
Applied Physics Letters 93 (19), 2008
842008
Light-extraction enhancement of vertical-injection GaN-based light-emitting diodes fabricated with highly integrated surface textures
H Kim, KK Choi, KK Kim, J Cho, SN Lee, Y Park, JS Kwak, TY Seong
Optics letters 33 (11), 1273-1275, 2008
752008
Carrier loss and luminescence degradation in green-light-emitting InGaN quantum wells with micron-scale indium clusters
YH Cho, SK Lee, HS Kwack, JY Kim, KS Lim, HM Kim, TW Kang, SN Lee, ...
Applied physics letters 83 (13), 2578-2580, 2003
692003
Laser display device
J Son, JW Lee, H Paek, S Lee, T Sakong
US Patent App. 11/513,224, 2007
672007
Characteristics of long wavelength InGaN quantum well laser diodes
KS Kim, JK Son, SN Lee, YJ Sung, HS Paek, HK Kim, MY Kim, KH Ha, ...
Applied Physics Letters 92 (10), 2008
622008
High-reflectance and thermally stable AgCu alloy p-type reflectors for GaN-based light-emitting diodes
H Kim, KH Baik, J Cho, JW Lee, S Yoon, H Kim, SN Lee, C Sone, Y Park, ...
IEEE Photonics Technology Letters 19 (5), 336-338, 2007
612007
Wet Chemical Etching of Semipolar GaN Planes to Obtain Brighter and Cost‐Competitive Light Emitters
S Jung, KR Song, SN Lee, H Kim
Advanced Materials 25 (32), 4470-4476, 2013
592013
Effects of Mg dopant on the degradation of InGaN multiple quantum wells in AlInGaN-based light emitting devices
SN Lee, HS Paek, JK Son, H Kim, KK Kim, KH Ha, OH Nam, Y Park
Journal of Electroceramics 23, 406-409, 2009
592009
Monolithic InGaN-based white light-emitting diodes with blue, green, and amber emissions
SN Lee, HS Paek, H Kim, T Jang, Y Park
Applied Physics Letters 92 (8), 2008
572008
Interpretation of combined infrared, submillimeter, and millimeter thermal flux data obtained during the Rosetta fly-by of Asteroid (21) Lutetia
S Keihm, F Tosi, L Kamp, F Capaccioni, S Gulkis, D Grassi, M Hofstadter, ...
Icarus 221 (1), 395-404, 2012
562012
High-performance blue InGaN laser diodes with single-quantum-well active layers
HY Ryu, KH Ha, SN Lee, T Jang, JK Son, HS Paek, YJ Sung, HK Kim, ...
IEEE Photonics technology letters 19 (21), 1717-1719, 2007
562007
Metallization contacts to nonpolar a-plane n-type GaN
H Kim, SN Lee, Y Park, JS Kwak, TY Seong
Applied Physics Letters 93 (3), 2008
552008
Determination of internal parameters in blue InGaN laser diodes by the measurement of cavity-length dependent characteristics
HY Ryu, KH Ha, JK Son, SN Lee, HS Paek, T Jang, YJ Sung, KS Kim, ...
Applied Physics Letters 93 (1), 2008
542008
Characteristics of Si and Mg doping in a-plane GaN grown on r-plane sapphire
SN Lee, HS Paek, JK Son, T Sakong, OH Nam, Y Park
Journal of crystal growth 307 (2), 358-362, 2007
522007
Highly stable temperature characteristics of InGaN blue laser diodes
HY Ryu, KH Ha, SN Lee, T Jang, HK Kim, JH Chae, KS Kim, KK Choi, ...
Applied physics letters 89 (3), 2006
522006
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