| An Overview of the Ultrawide Bandgap Ga2O3 Semiconductor-Based Schottky Barrier Diode for Power Electronics Application HW Xue, QM He, GZ Jian, SB Long, T Pang, M Liu Nanoscale research letters 13, 1-13, 2018 | 257 | 2018 |
| Metal–Semiconductor–Metal ε-Ga2O3 Solar-Blind Photodetectors with a Record-High Responsivity Rejection Ratio and Their Gain Mechanism Y Qin, L Li, X Zhao, GS Tompa, H Dong, G Jian, Q He, P Tan, X Hou, ... Acs Photonics 7 (3), 812-820, 2020 | 203 | 2020 |
| Schottky barrier diode based on β-Ga2O3 (100) single crystal substrate and its temperature-dependent electrical characteristics Q He, W Mu, H Dong, S Long, Z Jia, H Lv, Q Liu, M Tang, X Tao, M Liu Applied Physics Letters 110 (9), 2017 | 182 | 2017 |
| Low defect density and small I− V curve hysteresis in NiO/β-Ga2O3 pn diode with a high PFOM of 0.65 GW/cm2 W Hao, Q He, K Zhou, G Xu, W Xiong, X Zhou, G Jian, C Chen, X Zhao, ... Applied Physics Letters 118 (4), 2021 | 141 | 2021 |
| Review of deep ultraviolet photodetector based on gallium oxide Y Qin, S Long, H Dong, Q He, G Jian, Y Zhang, X Hou, P Tan, Z Zhang, ... Chinese Physics B 28 (1), 018501, 2019 | 131 | 2019 |
| Amorphous gallium oxide‐based gate‐tunable high‐performance thin film phototransistor for solar‐blind imaging Y Qin, S Long, Q He, H Dong, G Jian, Y Zhang, X Hou, P Tan, Z Zhang, ... Advanced Electronic Materials 5 (7), 1900389, 2019 | 120 | 2019 |
| High-Performance Metal-Organic Chemical Vapor Deposition Grown -Ga2O3 Solar-Blind Photodetector With Asymmetric Schottky Electrodes Y Qin, H Sun, S Long, GS Tompa, T Salagaj, H Dong, Q He, G Jian, Q Liu, ... IEEE Electron Device Letters 40 (9), 1475-1478, 2019 | 111 | 2019 |
| Schottky Barrier Rectifier Based on (100)-Ga2O3and its DC and AC Characteristics Q He, W Mu, B Fu, Z Jia, S Long, Z Yu, Z Yao, W Wang, H Dong, Y Qin, ... IEEE Electron Device Letters 39 (4), 556-559, 2018 | 71 | 2018 |
| Enhancement-Mode -Ga2O3 Metal–Oxide–Semiconductor Field-Effect Solar-Blind Phototransistor With Ultrahigh Detectivity and Photo-to-Dark Current Ratio Y Qin, H Dong, S Long, Q He, G Jian, Y Zhang, X Zhou, Y Yu, X Hou, ... IEEE Electron Device Letters 40 (5), 742-745, 2019 | 67 | 2019 |
| Progress of power field effect transistor based on ultra-wide bandgap Ga2O3 semiconductor material H Dong, H Xue, Q He, Y Qin, G Jian, S Long, M Liu Journal of Semiconductors 40 (1), 011802, 2019 | 63 | 2019 |
| Fast Switching -Ga2O3 Power MOSFET With a Trench-Gate Structure H Dong, S Long, H Sun, X Zhao, Q He, Y Qin, G Jian, X Zhou, Y Yu, ... IEEE Electron Device Letters 40 (9), 1385-1388, 2019 | 61 | 2019 |
| Characterization of the inhomogeneous barrier distribution in a Pt/(100) β-Ga2O3 Schottky diode via its temperature-dependent electrical properties G Jian, Q He, W Mu, B Fu, H Dong, Y Qin, Y Zhang, H Xue, S Long, Z Jia, ... AIP Advances 8 (1), 2018 | 59 | 2018 |
| Over 1 GW/cm2 Vertical Ga2O3 Schottky Barrier Diodes Without Edge Termination Q He, W Hao, X Zhou, Y Li, K Zhou, C Chen, W Xiong, G Jian, G Xu, ... IEEE Electron Device Letters 43 (2), 264-267, 2021 | 54 | 2021 |
| Realizing high-performance β-Ga₂O₃ MOSFET by using variation of lateral doping: a TCAD study X Zhou, Q Liu, G Xu, K Zhou, X Xiang, Q He, W Hao, G Jian, X Zhao, ... IEEE Transactions on Electron Devices 68 (4), 1501-1506, 2021 | 52 | 2021 |
| CV and JV investigation of HfO2/Al2O3 bilayer dielectrics MOSCAPs on (100) β-Ga2O3 H Dong, W Mu, Y Hu, Q He, B Fu, H Xue, Y Qin, G Jian, Y Zhang, S Long, ... AIP Advances 8 (6), 2018 | 50 | 2018 |
| Double-Barrier β-Ga2O3 Schottky Barrier Diode With Low Turn-on Voltage and Leakage Current W Xiong, X Zhou, G Xu, Q He, G Jian, C Chen, Y Yu, W Hao, X Xiang, ... IEEE Electron Device Letters 42 (3), 430-433, 2021 | 47 | 2021 |
| Enhancement-mode β-Ga2O3 U-shaped gate trench vertical MOSFET realized by oxygen annealing X Zhou, Y Ma, G Xu, Q Liu, J Liu, Q He, X Zhao, S Long Applied Physics Letters 121 (22), 2022 | 46 | 2022 |
| Improved Vertical β-Ga2O3 Schottky Barrier Diodes With Conductivity-Modulated p-NiO Junction Termination Extension W Hao, F Wu, W Li, G Xu, X Xie, K Zhou, W Guo, X Zhou, Q He, X Zhao, ... IEEE Transactions on Electron Devices 70 (4), 2129-2134, 2023 | 41 | 2023 |
| Selective high-resistance zones formed by oxygen annealing for-GaO Schottky diode applications Q He, X Zhou, Q Li, W Hao, Q Liu, Z Han, K Zhou, C Chen, J Peng, G Xu, ... IEEE Electron Device Letters 43 (11), 1933-1936, 2022 | 38 | 2022 |
| 2.6 kV NiO/Ga2O3 Heterojunction Diode with Superior High-Temperature Voltage Blocking Capability W Hao, Q He, X Zhou, X Zhao, G Xu, S Long 2022 IEEE 34th International Symposium on Power Semiconductor Devices and …, 2022 | 37 | 2022 |
