| Universal mechanical exfoliation of large-area 2D crystals Y Huang, YH Pan, R Yang, LH Bao, L Meng, HL Luo, YQ Cai, GD Liu, ... Nature communications 11 (1), 2453, 2020 | 539 | 2020 |
| Photoelectric plasticity in oxide thin film transistors with tunable synaptic functions Q Wu, J Wang, J Cao, C Lu, G Yang, X Shi, X Chuai, Y Gong, Y Su, ... Advanced Electronic Materials 4 (12), 1800556, 2018 | 115 | 2018 |
| Charge Transfer within the F4TCNQ‐MoS2 van der Waals Interface: Toward Electrical Properties Tuning and Gas Sensing Application J Wang, Z Ji, G Yang, X Chuai, F Liu, Z Zhou, C Lu, W Wei, X Shi, J Niu, ... Advanced Functional Materials 28 (51), 1806244, 2018 | 67 | 2018 |
| Spike encoding with optic sensory neurons enable a pulse coupled neural network for ultraviolet image segmentation Q Wu, B Dang, C Lu, G Xu, G Yang, J Wang, X Chuai, N Lu, D Geng, ... Nano Letters 20 (11), 8015-8023, 2020 | 64 | 2020 |
| Novel Vertical Channel-All-Around(CAA) IGZO FETs for 2T0C DRAM with High Density beyond 4F2 by Monolithic Stacking ML Xinlv Duan, Kailiang Huang, Junxiao Feng, Jiebin Niu, Haibo Qin, Shihui ... 2021 IEEE International Electron Devices Meeting (IEDM), 2021 | 57* | 2021 |
| Possible Luttinger liquid behavior of edge transport in monolayer transition metal dichalcogenide crystals G Yang, Y Shao, J Niu, X Ma, C Lu, W Wei, X Chuai, J Wang, J Cao, ... Nature communications 11 (1), 659, 2020 | 27 | 2020 |
| Room temperature-processed a-IGZO Schottky diode for rectifying circuit and bipolar 1D1R crossbar applications Q Wu, G Yang, C Lu, G Xu, J Wang, B Dang, Y Gong, X Shi, X Chuai, N Lu, ... IEEE Transactions on Electron Devices 66 (9), 4087-4091, 2019 | 25 | 2019 |
| A dual-functional IGZO-based device with Schottky diode rectifying and resistance switching behaviors Q Wu, C Lu, H Wang, J Cao, G Yang, J Wang, Y Gong, X Shi, X Chuai, ... IEEE Electron Device Letters 40 (1), 24-27, 2018 | 25 | 2018 |
| A new surface-potential-based compact model for the MoS2 field effect transistors in active matrix display applications J Cao, S Peng, W Liu, Q Wu, L Li, D Geng, G Yang, Z Ji, N Lu, M Liu Journal of Applied Physics 123 (6), 2018 | 23 | 2018 |
| Bulk‐Like Electrical Properties Induced by Contact‐Limited Charge Transport in Organic Diodes: Revised Space Charge Limited Current G Xu, N Gao, C Lu, W Wang, Z Ji, C Bi, Z Han, N Lu, G Yang, Y Li, Q Liu, ... Advanced Electronic Materials 4 (5), 1700493, 2018 | 19 | 2018 |
| Vertical Channel-All-Around (CAA) IGZO FET under 50 nm CD with High Read Current of 32.8 μA/μm (Vth + 1 V), Well-performed Thermal Stability up to 120 ℃ for … K Huang, X Duan, J Feng, Y Sun, C Lu, C Chen, G Jiao, X Lin, J Shao, ... 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 18 | 2022 |
| First Demonstration of Dual-Gate IGZO 2T0C DRAM with Novel Read Operation, One Bit Line in Single Cell, ION=1500 μA/μm@VDS=1V and Retention Time>300s W Lu, Z Zhu, K Chen, M Liu, BM Kang, X Duan, J Niu, F Liao, W Dan, ... 2022 International Electron Devices Meeting (IEDM), 26.4. 1-26.4. 4, 2022 | 16 | 2022 |
| Study of positive-gate-bias-induced hump phenomenon in amorphous indium–gallium–zinc oxide thin-film transistors X Shi, C Lu, X Duan, Q Chen, H Ji, Y Su, X Chuai, D Liu, Y Zhao, G Yang, ... IEEE Transactions on Electron Devices 67 (4), 1606-1612, 2020 | 16 | 2020 |
| A tied Fermi liquid to Luttinger liquid model for nonlinear transport in conducting polymers J Wang, J Niu, B Shao, G Yang, C Lu, M Li, Z Zhou, X Chuai, J Chen, N Lu, ... Nature Communications 12 (1), 58, 2021 | 14 | 2021 |
| An analytical Seebeck coefficient model for disordered organic semiconductors X Shi, N Lu, G Xu, J Cao, Z Han, G Yang, L Li, M Liu Physics Letters A 381 (40), 3441-3444, 2017 | 14 | 2017 |
| Scaling Dual-Gate Ultra-thin a-IGZO FET to 30 nm Channel Length with Record-high Gm,max of 559 µS/µm at VDS=1 V, Record-low DIBL of 10 mV/V and Nearly … K Chen, J Niu, G Yang, M Liu, W Lu, F Liao, K Huang, XL Duan, C Lu, ... 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 13 | 2022 |
| Thickness of accumulation layer in amorphous indium-gallium-zinc-oxide thin-film transistors by Kelvin Probe Force Microscopy X Shi, C Lu, G Xu, G Yang, N Lu, Z Ji, D Geng, L Li, M Liu Applied Physics Letters 114 (7), 2019 | 11 | 2019 |
| Analytical surface potential-based compact model for independent dual gate a-IGZO TFT J Guo, Y Zhao, G Yang, X Chuai, W Lu, D Liu, Q Chen, X Duan, S Huang, ... IEEE Transactions on Electron Devices 68 (4), 2049-2055, 2021 | 10 | 2021 |
| Anomalous Positive Bias Stress Instability in MoS2 Transistors With High-Hydrogen-Concentration SiO2 Gate Dielectrics G Yang, X Chuai, J Niu, J Wang, X Shi, Q Wu, Y Su, Y Zhao, D Liu, G Xu, ... IEEE Electron Device Letters 40 (2), 232-235, 2018 | 10 | 2018 |
| A New Velocity Saturation Model of MoS2 Field-Effect Transistors J Cao, W Liu, Q Wu, G Yang, N Lu, Z Ji, D Geng, L Li, M Liu IEEE Electron Device Letters 39 (6), 893-896, 2018 | 10 | 2018 |
