| Learning of spatiotemporal patterns in a spiking neural network with resistive switching synapses W Wang, G Pedretti, V Milo, R Carboni, A Calderoni, N Ramaswamy, ... Science advances 4 (9), eaat4752, 2018 | 255 | 2018 |
| Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices W Wang, M Wang, E Ambrosi, A Bricalli, M Laudato, Z Sun, X Chen, ... Nature communications 10 (1), 81, 2019 | 252 | 2019 |
| Solving matrix equations in one step with cross-point resistive arrays Z Sun, G Pedretti, E Ambrosi, A Bricalli, W Wang, D Ielmini PNAS 116, 201815682, 2019 | 217 | 2019 |
| Memristive Crossbar Arrays for Storage and Computing Applications H Li, S Wang, X Zhang, W Wang, R Yang, Z Sun, W Feng, P Lin, Z Wang, ... Advanced Intelligent Systems 3 (9), 2100017, 2021 | 109 | 2021 |
| Adaptive extreme edge computing for wearable devices E Covi, E Donati, X Liang, D Kappel, H Heidari, M Payvand, W Wang Frontiers in Neuroscience 15, 611300, 2021 | 96 | 2021 |
| Enhancing the matrix addressing of flexible sensory arrays by a highly nonlinear threshold switch M Wang, W Wang, WR Leow, C Wan, G Chen, Y Zeng, J Yu, Y Liu, P Cai, ... Advanced Materials 30 (33), 1802516, 2018 | 76 | 2018 |
| Recent Progress in Synaptic Devices Based on Two‐Dimensional Materials L Sun, W Wang, H Yang Advanced Intelligent Systems, 1900167, 2020 | 63* | 2020 |
| Integration and co-design of memristive devices and algorithms for artificial intelligence W Wang, W Song, P Yao, Y Li, J Van Nostrand, Q Qiu, D Ielmini, JJ Yang Iscience 23 (12), 2020 | 59 | 2020 |
| Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion—Part I: Numerical Modeling W Wang, M Laudato, E Ambrosi, A Bricalli, E Covi, YH Lin, D Ielmini IEEE Transactions on Electron Devices 66 (9), 3795-3801, 2019 | 53 | 2019 |
| Analysis of the contact resistance in amorphous InGaZnO thin film transistors W Wang, L Li, C Lu, Y Liu, H Lv, G Xu, Z Ji, M Liu Applied Physics Letters 107 (6), 2015 | 53 | 2015 |
| Neuromorphic Motion Detection and Orientation Selectivity by Volatile Resistive Switching Memories W Wang, E Covi, A Milozzi, M Farronato, S Ricci, C Sbandati, G Pedretti, ... Advanced Intelligent Systems, 2000224, 2020 | 49 | 2020 |
| Volatile resistive switching memory based on Ag ion drift/diffusion—Part II: Compact modeling W Wang, M Laudato, E Ambrosi, A Bricalli, E Covi, YH Lin, D Ielmini IEEE Transactions on Electron Devices 66 (9), 3802-3808, 2019 | 39 | 2019 |
| Progress in flexible organic thin-film transistors and integrated circuits C Lu, Z Ji, G Xu, W Wang, L Wang, Z Han, L Li, M Liu Science bulletin 61 (14), 1081-1096, 2016 | 38 | 2016 |
| Computing of temporal information in spiking neural networks with ReRAM synapses W Wang, G Pedretti, V Milo, R Carboni, A Calderoni, N Ramaswamy, ... Faraday discussions 213, 453-469, 2019 | 33 | 2019 |
| Switching Dynamics of Ag-Based Filamentary Volatile Resistive Switching Devices—Part I: Experimental Characterization E Covi, W Wang, YH Lin, M Farronato, E Ambrosi, D Ielmini IEEE Transactions on Electron Devices 68 (9), 4335-4341, 2021 | 30 | 2021 |
| Analytical carrier density and quantum capacitance for graphene L Wang, W Wang, G Xu, Z Ji, N Lu, L Li, M Liu Applied Physics Letters 108 (1), 2016 | 29 | 2016 |
| Switching dynamics of Ag-based filamentary volatile resistive switching devices—Part II: Mechanism and modeling W Wang, E Covi, YH Lin, E Ambrosi, A Milozzi, C Sbandati, M Farronato, ... IEEE Transactions on Electron Devices 68 (9), 4342-4349, 2021 | 25 | 2021 |
| Electric field modified Arrhenius description of charge transport in amorphous oxide semiconductor thin film transistors W Wang, G Xu, MDH Chowdhury, H Wang, JK Um, Z Ji, N Gao, Z Zong, ... Physical Review B 98 (24), 245308, 2018 | 22 | 2018 |
| A Volatile RRAM Synapse for Neuromorphic Computing E Covi, YH Lin, W Wang, T Stecconi, V Milo, A Bricalli, E Ambrosi, ... 2019 26th IEEE International Conference on Electronics, Circuits and Systems …, 2019 | 21 | 2019 |
| Physics-based modeling of volatile resistive switching memory (RRAM) for crosspoint selector and neuromorphic computing W Wang, A Bricalli, M Laudato, E Ambrosi, E Covi, D Ielmini 2018 IEEE International Electron Devices Meeting (IEDM), 40.3.1-40.3. 4, 2018 | 21 | 2018 |
Daniele IelminiProfessor of ElectronicsVerified email at elet.polimi.it
