Jessica L. Boland
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Charge‐carrier dynamics and mobilities in formamidinium lead mixed‐halide perovskites
W Rehman, RL Milot, GE Eperon, C Wehrenfennig, JL Boland, HJ Snaith, ...
Advanced Materials 27 (48), 7938-7944, 2015
A review of the electrical properties of semiconductor nanowires: insights gained from terahertz conductivity spectroscopy
HJ Joyce, JL Boland, CL Davies, SA Baig, MB Johnston
Semiconductor Science and Technology 31 (10), 103003, 2016
Single nanowire photoconductive terahertz detectors
K Peng, P Parkinson, L Fu, Q Gao, N Jiang, YN Guo, F Wang, HJ Joyce, ...
Nano letters 15 (1), 206-210, 2015
Modulation Doping of GaAs/AlGaAs Core–Shell Nanowires with Effective Defect Passivation and High Electron Mobility
JL Boland, S Conesa-Boj, P Parkinson, G Tütüncüoglu, F Matteini, ...
Nano letters 15 (2), 1336-1342, 2015
Increased photoconductivity lifetime in GaAs nanowires by controlled n-type and p-type doping
JL Boland, A Casadei, G Tütüncüoglu, F Matteini, CL Davies, ...
ACS nano 10 (4), 4219-4227, 2016
An ultrafast switchable terahertz polarization modulator based on III–V semiconductor nanowires
SA Baig, JL Boland, DA Damry, HH Tan, C Jagadish, HJ Joyce, ...
Nano letters 17 (4), 2603-2610, 2017
InxGa1− xAs nanowires with uniform composition, pure wurtzite crystal phase and taper-free morphology
AS Ameruddin, HA Fonseka, P Caroff, J Wong-Leung, RLMO het Veld, ...
Nanotechnology 26 (20), 205604, 2015
Biomimetic Reflectors Fabricated Using Self‐Organising, Self‐Aligning Liquid Crystal Polymers
A Matranga, S Baig, J Boland, C Newton, T Taphouse, G Wells, S Kitson
Advanced Materials 25 (4), 520-523, 2013
Broadband phase-sensitive single InP nanowire photoconductive terahertz detectors
K Peng, P Parkinson, JL Boland, Q Gao, YC Wenas, CL Davies, Z Li, L Fu, ...
Nano letters 16 (8), 4925-4931, 2016
Nanoscale Near-Field Tomography of Surface States on (Bi0.5Sb0.5)2Te3
F Mooshammer, F Sandner, MA Huber, M Zizlsperger, H Weigand, ...
Nano letters 18 (12), 7515-7523, 2018
High electron mobility and insights into temperature-dependent scattering mechanisms in InAsSb nanowires
JL Boland, F Amaduzzi, S Sterzl, H Potts, LM Herz, A Fontcuberta i Morral, ...
Nano letters 18 (6), 3703-3710, 2018
The influence of surfaces on the transient terahertz conductivity and electron mobility of GaAs nanowires
HJ Joyce, SA Baig, P Parkinson, CL Davies, JL Boland, HH Tan, ...
Journal of Physics D: Applied Physics 50 (22), 224001, 2017
Single n+-i-n+ InP nanowires for highly sensitive terahertz detection
K Peng, P Parkinson, Q Gao, JL Boland, Z Li, F Wang, S Mokkapati, L Fu, ...
Nanotechnology 28 (12), 125202, 2017
Low ensemble disorder in quantum well tube nanowires
CL Davies, P Parkinson, N Jiang, JL Boland, S Conesa-Boj, HH Tan, ...
Nanoscale 7 (48), 20531-20538, 2015
Towards higher electron mobility in modulation doped GaAs/AlGaAs core shell nanowires
JL Boland, G TŁtŁncŁoglu, JQ Gong, S Conesa-Boj, CL Davies, LM Herz, ...
Nanoscale 9 (23), 7839-7846, 2017
Ultrafast two-dimensional field spectroscopy of terahertz intersubband saturable absorbers
J Raab, C Lange, JL Boland, I Laepple, M Furthmeier, E Dardanis, ...
Optics express 27 (3), 2248-2257, 2019
Single GaAs/AlGaAs nanowire photoconductive terahertz detectors
K Peng, P Parkinson, L Fu, Q Gao, N Jiang, YN Guo, F Wang, HJ Joyce, ...
2014 Conference on Optoelectronic and Microelectronic Materials & Devices†…, 2014
Reflective structure with transparent and semi-transparent transmission regions
S Kitson, A Geisow, T Taphouse, MA Matranga, GG Wells, JL Boland, ...
US Patent 9,519,199, 2016
Unveiling temperature-dependent scattering mechanisms in semiconductor nanowires using optical-pump terahertz-probe spectroscopy
JL Boland, F Amaduzzi, S Sterzl, H Potts, G TŁtŁncŁoglu, LM Herz, ...
2019 44th International Conference on Infrared, Millimeter, and Terahertz†…, 2019
Probing the photophysics of semiconductor nanomaterials using optical pump-terahertz probe spectroscopy: from nanowires to perovskites
HJ Joyce, L Eyre, SO Adeyemo, SA Baig, JL Boland, CL Davies, ...
Physical Chemistry of Semiconductor Materials and Interfaces XVII 10724, 107240F, 2018
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