Jens W. Tomm
Jens W. Tomm
Senior Researcher at MBI berlin
Verified email at
Cited by
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Photoluminescence properties of ZnGa2O4:Mn powder phosphors
TK Tran, W Park, JW Tomm, BK Wagner, SM Jacobsen, CJ Summers, ...
Journal of applied physics 78 (9), 5691-5695, 1995
Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers
JW Tomm, M Ziegler, M Hempel, T Elsaesser
Laser & Photonics Reviews 5 (3), 422-441, 2011
Interdot carrier transfer in asymmetric bilayer quantum dot structures
YI Mazur, ZM Wang, GG Tarasov, M Xiao, GJ Salamo, JW Tomm, ...
Applied Physics Letters 86 (6), 063102, 2005
InP quantum dots embedded in GaP: Optical properties and carrier dynamics
F Hatami, WT Masselink, L Schrottke, JW Tomm, V Talalaev, C Kristukat, ...
Physical Review B 67 (8), 085306, 2003
Transient luminescence of dense InAs/GaAs quantum dot arrays
JW Tomm, T Elsaesser, YI Mazur, H Kissel, GG Tarasov, ZY Zhuchenko, ...
Physical Review B 67 (4), 045326, 2003
Fast recombination processes in lead chalcogenide semiconductors studied via transient optical nonlinearities
R Klann, T Höfer, R Buhleier, T Elsaesser, JW Tomm
Journal of applied physics 77 (1), 277-286, 1995
Carrier transfer in self-assembled coupled InAs/GaAs quantum dots
GG Tarasov, YI Mazur, ZY Zhuchenko, A Maaßdorf, D Nickel, JW Tomm, ...
Journal of Applied Physics 88 (12), 7162-7170, 2000
Optical and photoelectrical properties of oriented ZnO films
JW Tomm, B Ullrich, XG Qiu, Y Segawa, A Ohtomo, M Kawasaki, ...
Journal of Applied Physics 87 (4), 1844-1848, 2000
Transient thermal behavior of high power diode laser arrays
R Puchert, A Barwolff, M Voss, U Menzel, JW Tomm, J Luft
IEEE Transactions on Components and Packaging Technologies 23 (1), 95-100, 2000
Facet temperature reduction by a current blocking layer at the front facets of high-power InGaAs/AlGaAs lasers
F Rinner, J Rogg, MT Kelemen, M Mikulla, G Weimann, JW Tomm, ...
Journal of applied physics 93 (3), 1848-1850, 2003
Quantum-Well Laser Array Packaging: Nanoscale Pckaging Techniques
JW Tomm, J Jimenez
McGraw Hill Professional, 2007
High-power broad-area diode lasers and laser bars
G Erbert, A Bärwolff, J Sebastian, J Tomm
High-Power Diode Lasers, 173-223, 2000
Complementary thermoreflectance and micro-Raman analysis of facet temperatures of diode lasers
TJ Ochalski, D Pierścińska, K Pierściński, M Bugajski, JW Tomm, ...
Applied physics letters 89 (7), 071104, 2006
Optical near‐field photocurrent spectroscopy: A new technique for analyzing microscopic aging processes in optoelectronic devices
A Richter, JW Tomm, C Lienau, J Luft
Applied physics letters 69 (26), 3981-3983, 1996
Aging properties of high power laser diode arrays analyzed by Fourier-transform photocurrent measurements
JW Tomm, A Jaeger, A Bärwolff, T Elsaesser, A Gerhardt, J Donecker
Applied physics letters 71 (16), 2233-2235, 1997
Simultaneous quantification of strain and defects in high-power diode laser devices
JW Tomm, A Gerhardt, T Elsaesser, D Lorenzen, P Hennig
Applied physics letters 81 (17), 3269-3271, 2002
Transient thermal properties of high-power diode laser bars
M Ziegler, F Weik, JW Tomm, T Elsaesser, W Nakwaski, RP Sarzała, ...
Applied physics letters 89 (26), 263506, 2006
Analysis of thermal images from diode lasers: Temperature profiling and reliability screening
A Kozlowska, M Latoszek, JW Tomm, F Weik, T Elsaesser, M Zbroszczyk, ...
Applied Physics Letters 86 (20), 203503, 2005
Staircase-like spectral dependence of ground-state luminescence time constants in high-density InAs/GaAs quantum dots
YI Mazur, JW Tomm, V Petrov, GG Tarasov, H Kissel, C Walther, ...
Applied Physics Letters 78 (21), 3214-3216, 2001
Direct spectroscopic measurement of mounting-induced strain in high-power optoelectronic devices
JW Tomm, R Müller, A Bärwolff, T Elsaesser, D Lorenzen, FX Daiminger, ...
Applied physics letters 73 (26), 3908-3910, 1998
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