| 60Co gamma irradiation effects on n-GaN Schottky diodes GA Umana-Membreno, JM Dell, G Parish, BD Nener, L Faraone, ... Electron Devices, IEEE Transactions on 50 (12), 2326-2334, 2003 | 134* | 2003 |
| Temperature-dependent characterization of AlGaN/GaN HEMTs: thermal and source/drain resistances R Menozzi, GA Umana-Membreno, BD Nener, G Parish, G Sozzi, ... IEEE Transactions on Device and Materials Reliability 8 (2), 255-264, 2008 | 121 | 2008 |
| 60Co gamma-irradiation-induced defects in n-GaN GA Umana-Membreno, JM Dell, TP Hessler, BD Nener, G Parish, ... Applied physics letters 80 (23), 4354-4356, 2002 | 91 | 2002 |
| Mercury (II) selective sensors based on AlGaN/GaN transistors M Asadnia, M Myers, ND Akhavan, K O'Donnell, GA Umana-Membreno, ... Analytica Chimica Acta, 2016 | 82 | 2016 |
| Engineering the Bandgap of Unipolar HgCdTe-Based nBn Infrared Photodetectors M Kopytko, J Wróbel, K Jóźwikowski, A Rogalski, J Antoszewski, ... Journal of Electronic Materials 44 (1), 158-166, 2015 | 71 | 2015 |
| Characterisation of multiple carrier transport in indium nitride grown by molecular beam epitaxy TB Fehlberg, GA Umana-Membreno, BD Nener, G Parish, CS Gallinat, ... Japanese journal of applied physics 45, L1090-L1092, 2006 | 54 | 2006 |
| Vertical minority carrier electron transport in p-type InAs/GaSb type-II superlattices GA Umana-Membreno, B Klein, H Kala, J Antoszewski, N Gautam, ... Applied Physics Letters 101 (25), 253515-253515-4, 2012 | 53 | 2012 |
| Electrically active defects in GaN layers grown with and without Fe-doped buffers by metal-organic chemical vapor deposition GA Umana-Membreno, G Parish, N Fichtenbaum, S Keller, UK Mishra, ... Journal of Electronic Materials 37 (5), 569-572, 2008 | 50 | 2008 |
| Ca2+ detection utilising AlGaN/GaN transistors with ion-selective polymer membranes M Asadnia, M Myers, GA Umana-Membreno, TM Sanders, UK Mishra, ... Analytica Chimica Acta 987, 105-110, 2017 | 49 | 2017 |
| Ion versus pH sensitivity of ungated AlGaN/GaN heterostructure-based devices A Podolska, M Kocan, AMG Cabezas, TD Wilson, GA Umana-Membreno, ... Applied Physics Letters 97 (1), 012108-012108-3, 2010 | 48 | 2010 |
| Nitrate ion detection using AlGaN/GaN heterostructure-based devices without a reference electrode M Myers, FLM Khir, A Podolska, GA Umana-Membreno, B Nener, M Baker, ... Sensors and Actuators B: Chemical 181, 301-305, 2013 | 47 | 2013 |
| A method of removing the valence band discontinuity in HgCdTe-based nBn detectors ND Akhavan, GA Umana-Membreno, G Jolley, J Antoszewski, L Faraone Applied Physics Letters 105 (12), 121110, 2014 | 44 | 2014 |
| High-resolution mobility spectrum analysis of multicarrier transport in advanced infrared materials J Antoszewski, GA Umana-Membreno, L Faraone Journal of electronic materials 41 (10), 2816-2823, 2012 | 44 | 2012 |
| Vertical carrier transport in strain-balanced InAs/InAsSb type-II superlattice material LK Casias, CP Morath, EH Steenbergen, GA Umana-Membreno, ... Applied Physics Letters 116 (18), 182109, 2020 | 42 | 2020 |
| Superlattice Barrier HgCdTe nBn Infrared Photodetectors: Validation of the Effective Mass Approximation ND Akhavan, GA Umana-Membreno, R Gu, M Asadnia, J Antoszewski, ... IEEE Transactions on Electron Devices 63 (12), 4811-4818, 2016 | 40 | 2016 |
| Design of band engineered HgCdTe nBn detectors for MWIR and LWIR applications ND Akhavan, G Jolley, GA Umana-Membreno, J Antoszewski, L Faraone IEEE Transactions on Electron Devices 62 (3), 722-728, 2015 | 39 | 2015 |
| Investigation of Multicarrier Transport in LPE-Grown Hg1− x Cd x Te Layers GA Umana-Membreno, J Antoszewski, L Faraone, EPG Smith, GM Venzor, ... Journal of Electronic Materials 39 (7), 1023-1029, 2010 | 39 | 2010 |
| Theoretical Study of midwave infrared HgCdTe nBn detectors operating at elevated temperatures ND Akhavan, G Jolley, GA Umana-Membreno, J Antoszewski, L Faraone Journal of Electronic Materials 44 (9), 3044-3055, 2015 | 38 | 2015 |
| Optimization of Superlattice Barrier HgCdTe nBn Infrared Photodetectors Based on an NEGF Approach ND Akhavan, GA Umana-Membreno, R Gu, J Antoszewski, L Faraone IEEE Transactions on Electron Devices 65 (2), 591-598, 2018 | 35 | 2018 |
| Delta doping in HgCdTe-based unipolar barrier photodetectors ND Akhavan, GA Umana-Membreno, R Gu, J Antoszewski, L Faraone IEEE Transactions on Electron Devices 65 (10), 4340-4345, 2018 | 34 | 2018 |
Lorenzo FaraoneProfessor, University of Western AustraliaVerified email at uwa.edu.au
