Spyros Stathopoulos
Spyros Stathopoulos
Research Fellow
Η διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα soton.ac.uk
Παρατίθεται από
Παρατίθεται από
Multibit memory operation of metal-oxide bi-layer memristors
S Stathopoulos, A Khiat, M Trapatseli, S Cortese, A Serb, I Valov, ...
Scientific Reports 7, 17532, 2017
A data-driven verilog-a reram model
I Messaris, A Serb, S Stathopoulos, A Khiat, S Nikolaidis, T Prodromakis
IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2018
Low-Power and Highly Uniform 3-b Multilevel Switching in Forming Free TiO2–x-Based RRAM With Embedded Pt Nanocrystals
P Bousoulas, S Stathopoulos, D Tsialoukis, D Tsoukalas
IEEE Electron Device Letters 37 (7), 874-877, 2016
Flexible polyimide chemical sensors using platinum nanoparticles
E Skotadis, D Mousadakos, K Katsabrokou, S Stathopoulos, D Tsoukalas
Sensors and Actuators B: Chemical 189, 106-112, 2013
PHEMA functionalization of gold nanoparticles for vapor sensing: Chemi-resistance, chemi-capacitance and chemi-impedance
J Tang, E Skotadis, S Stathopoulos, V Roussi, V Tsouti, D Tsoukalas
Sensors and Actuators B: chemical 170, 129-136, 2012
Engineering amorphous-crystalline interfaces in TiO2−x/TiO2−y-based bilayer structures for enhanced resistive switching and synaptic properties
P Bousoulas, P Asenov, I Karageorgiou, D Sakellaropoulos, ...
Journal of Applied Physics 120 (15), 154501, 2016
Millisecond non-melt laser annealing of phosphorus implanted germanium: Influence of nitrogen co-doping
S Stathopoulos, L Tsetseris, N Pradhan, B Colombeau, D Tsoukalas
Journal of Applied Physics 118 (13), 135710, 2015
Conduction mechanisms at distinct resistive levels of Pt/TiO2-x/Pt memristors
L Michalas, S Stathopoulos, A Khiat, T Prodromakis
Applied Physics Letters 113 (14), 143503, 2018
Chemical sensing based on double layer PHEMA polymer and platinum nanoparticle films
E Skotadis, JL Tanner, S Stathopoulos, V Tsouti, D Tsoukalas
Sensors and Actuators B: Chemical 175, 85-91, 2012
Annual cycle of turbulent dissipation estimated from Seagliders
DG Evans, NS Lucas, V Hemsley, E Frajka‐Williams, ...
Geophysical Research Letters 45 (19), 10,560-10,569, 2018
Coexistence of bipolar and threshold resistive switching in TiO2 based structure with embedded hafnium nanoparticles
I Michelakaki, P Bousoulas, S Stathopoulos, N Boukos, D Tsoukalas
Journal of Physics D: Applied Physics 50 (4), 045103, 2016
CO₂ Laser Annealing for USJ Formation in Silicon: Comparison of Simulation and Experiment
S Stathopoulos, A Florakis, G Tzortzis, T Laspas, A Triantafyllopoulos, ...
IEEE Transactions on Electron Devices 61 (3), 696-701, 2014
Electrical characteristics of interfacial barriers at metal—TiO2 contacts
L Michalas, A Khiat, S Stathopoulos, T Prodromakis
Journal of Physics D: Applied Physics 51 (42), 425101, 2018
Interface Asymmetry Induced by Symmetric Electrodes on Metal-Al: TiOx-Metal Structures
L Michalas, M Trapatseli, S Stathopoulos, S Cortese, A Khiat, ...
IEEE Transactions on Nanotechnology, 2017
A TiO2 ReRAM parameter extraction method
I Messaris, S Nikolaidis, A Serb, S Stathopoulos, I Gupta, A Khiat, ...
2017 IEEE International Symposium on Circuits and Systems (ISCAS), 1-4, 2017
An electrical characterisation methodology for identifying the switching mechanism in TiO 2 memristive stacks
L Michalas, S Stathopoulos, A Khiat, T Prodromakis
Scientific reports 9 (1), 1-8, 2019
Synthesis of hafnium nanoparticles and hafnium nanoparticle films by gas condensation and energetic deposition
I Michelakaki, N Boukos, DA Dragatogiannis, S Stathopoulos, ...
Beilstein Journal of Nanotechnology 9 (1), 1868-1880, 2018
An electrical characterisation Methodology for Benchmarking Memristive Device technologies
S Stathopoulos, L Michalas, A Khiat, A Serb, T Prodromakis
Scientific Reports 9 (1), 1-10, 2019
Metal oxide-enabled reconfigurable memristive threshold logic gates
G Papandroulidakis, A Khiat, A Serb, S Stathopoulos, L Michalas, ...
2018 IEEE International Symposium on Circuits and Systems (ISCAS), 1-5, 2018
A memristive switching uncertainty model
S Stathopoulos, A Serb, A Khiat, M Ogorzałek, T Prodromakis
IEEE Transactions on Electron Devices 66 (7), 2946-2953, 2019
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