Lasing in direct-bandgap GeSn alloy grown on Si S Wirths, R Geiger, N Von Den Driesch, G Mussler, T Stoica, S Mantl, ...
Nature photonics 9 (2), 88-92, 2015
1374 2015 Optically pumped GeSn microdisk lasers on Si D Stange, S Wirths, R Geiger, C Schulte-Braucks, B Marzban, ...
ACS photonics 3 (7), 1279-1285, 2016
265 2016 Ultrafast photocurrents at the surface of the three-dimensional topological insulator Bi2 Se3 L Braun, G Mussler, A Hruban, M Konczykowski, T Schumann, M Wolf, ...
Nature communications 7 (1), 13259, 2016
229 2016 Band engineering and growth of tensile strained Ge/(Si) GeSn heterostructures for tunnel field effect transistors S Wirths, AT Tiedemann, Z Ikonic, P Harrison, B Holländer, T Stoica, ...
Applied physics letters 102 (19), 2013
196 2013 Direct bandgap group IV epitaxy on Si for laser applications N Von Den Driesch, D Stange, S Wirths, G Mussler, B Hollander, Z Ikonic, ...
Chemistry of Materials 27 (13), 4693-4702, 2015
172 2015 Room-Temperature High-Frequency Transport of Dirac Fermions in Epitaxially Grown P Olbrich, LE Golub, T Herrmann, SN Danilov, H Plank, VV Bel’Kov, ...
Physical review letters 113 (9), 096601, 2014
158 2014 MBE growth optimization of topological insulator Bi2Te3 films J Krumrain, G Mussler, S Borisova, T Stoica, L Plucinski, CM Schneider, ...
Journal of Crystal Growth 324 (1), 115-118, 2011
124 2011 Realization of a vertical topological p–n junction in epitaxial Sb2 Te3 /Bi2 Te3 heterostructures M Eschbach, E Młyńczak, J Kellner, J Kampmeier, M Lanius, E Neumann, ...
Nature communications 6 (1), 8816, 2015
118 2015 Selective area growth and stencil lithography for in situ fabricated quantum devices P Schüffelgen, D Rosenbach, C Li, TW Schmitt, M Schleenvoigt, AR Jalil, ...
Nature nanotechnology 14 (9), 825-831, 2019
112 2019 Optical Transitions in Direct-Bandgap Ge1–x Snx D Stange, S Wirths, N von den Driesch, G Mussler, T Stoica, Z Ikonic, ...
ACS photonics 2 (11), 1539-1545, 2015
107 2015 GeSn heterojunction LEDs on Si substrates M Oehme, K Kostecki, T Arguirov, G Mussler, K Ye, M Gollhofer, M Schmid, ...
IEEE photonics technology letters 26 (2), 187-189, 2013
107 2013 Reduced pressure CVD growth of Ge and Ge1− xSnx alloys S Wirths, D Buca, G Mussler, AT Tiedemann, B Holländer, P Bernardy, ...
ECS Journal of Solid State Science and Technology 2 (5), N99, 2013
101 2013 Photon drag effect in H Plank, LE Golub, S Bauer, VV Bel'Kov, T Herrmann, P Olbrich, ...
Physical Review B 93 (12), 125434, 2016
99 2016 Study of GeSn based heterostructures: towards optimized group IV MQW LEDs D Stange, N Von Den Driesch, D Rainko, C Schulte-Braucks, S Wirths, ...
Optics express 24 (2), 1358-1367, 2016
95 2016 Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys JH Fournier-Lupien, S Mukherjee, S Wirths, E Pippel, N Hayazawa, ...
Applied physics letters 103 (26), 2013
86 2013 Tensely strained GeSn alloys as optical gain media S Wirths, Z Ikonic, AT Tiedemann, B Holländer, T Stoica, G Mussler, ...
Applied physics letters 103 (19), 2013
86 2013 Bi1 Te1 is a dual topological insulator M Eschbach, M Lanius, C Niu, E Młyńczak, P Gospodarič, J Kellner, ...
Nature communications 8 (1), 14976, 2017
83 2017 Suppressing Twin Domains in Molecular Beam Epitaxy Grown Bi2 Te3 Topological Insulator Thin Films J Kampmeier, S Borisova, L Plucinski, M Luysberg, G Mussler, ...
Crystal growth & design 15 (1), 390-394, 2015
81 2015 Mode of Growth of Ultrathin Topological Insulator Bi2 Te3 Films on Si (111) Substrates S Borisova, J Krumrain, M Luysberg, G Mussler, D Grützmacher
Crystal growth & design 12 (12), 6098-6103, 2012
79 2012 SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications S Wirths, D Buca, Z Ikonic, P Harrison, AT Tiedemann, B Holländer, ...
Thin Solid Films 557, 183-187, 2014
78 2014 