Kwesi Eshun
Kwesi Eshun
Research Assistant, George Mason Universiy
Verified email at masonlive.gmu.edu
Title
Cited by
Cited by
Year
Phase transition, effective mass and carrier mobility of MoS2 monolayer under tensile strain
S Yu, HD Xiong, K Eshun, H Yuan, Q Li
Applied Surface Science 325, 27-32, 2015
902015
Strain-engineering the anisotropic electrical conductance in ReS2 monolayer
S Yu, H Zhu, K Eshun, C Shi, M Zeng, Q Li
Applied Physics Letters 108 (19), 191901, 2016
562016
A computational study of the electronic properties of one-dimensional armchair phosphorene nanotubes
S Yu, H Zhu, K Eshun, A Arab, A Badwan, Q Li
Journal of Applied Physics 118 (16), 164306, 2015
442015
Novel two-dimensional mechano-electric generators and sensors based on transition metal dichalcogenides
S Yu, K Eshun, H Zhu, Q Li
Scientific reports 5 (1), 1-11, 2015
242015
Doping induces large variation in the electrical properties of MoS2 monolayers
K Eshun, HD Xiong, S Yu, Q Li
Solid-State Electronics 106, 44-49, 2015
212015
Study of interfacial strain at the α-Al2O3/monolayer MoS2 interface by first principle calculations
S Yu, S Ran, H Zhu, K Eshun, C Shi, K Jiang, K Gu, FJ Seo, Q Li
Applied Surface Science 428, 593-597, 2018
132018
Two-dimensional hybrid layered materials: strain engineering on the band structure of MoS2/WSe2 hetero-multilayers
K Gu, S Yu, K Eshun, H Yuan, H Ye, J Tang, DE Ioannou, C Xiao, H Wang, ...
Nanotechnology 28 (36), 365202, 2017
72017
Effects of Doping, Strain and Size on the electrical properties of MoS2 Nanoribbons
S Yu, Q Li, K Eshun
ECS Transactions 64 (12), 25, 2014
72014
Dirac fermions induced in strained zigzag phosphorus nanotubes and their applications in field effect transistors
S Yu, H Zhu, K Eshun, C Shi, M Zeng, K Jiang, Q Li
Physical Chemistry Chemical Physics 18 (47), 32521-32527, 2016
42016
Strain effect engineered in {\alpha}-Al2O3/monolayer MoS2 interface by first principle calculations
S Yu, S Ran, H Zhu, K Eshun, C Shi, K Jiang, Q Li
arXiv preprint arXiv:1612.09326, 2016
2016
Two-Dimensional Materials: Doping-Induced Variation, Heterojunction FETs and Hybrid Multilayers
KP Eshun
2014
Effects of Doping, Strain and Size on the Electrical Properties of MoS
S Yu, Q Li, K Eshun
The system can't perform the operation now. Try again later.
Articles 1–12