Follow
Charutha Senaratne
Charutha Senaratne
Verified email at asu.edu
Title
Cited by
Cited by
Year
Compositional dependence of the direct and indirect band gaps in Ge1− ySny alloys from room temperature photoluminescence: implications for the indirect to direct gap crossover …
L Jiang, JD Gallagher, CL Senaratne, T Aoki, J Mathews, J Kouvetakis, ...
Semiconductor Science and Technology 29 (11), 115028, 2014
1242014
Compositional dependence of the bowing parameter for the direct and indirect band gaps in Ge1− ySny alloys
JD Gallagher, CL Senaratne, J Kouvetakis, J Menendez
Applied Physics Letters 105 (14), 2014
1072014
Electroluminescence from GeSn heterostructure pin diodes at the indirect to direct transition
JD Gallagher, CL Senaratne, P Sims, T Aoki, J Menendez, J Kouvetakis
Applied Physics Letters 106 (9), 2015
722015
Advances in light emission from group-IV alloys via lattice engineering and n-type doping based on custom-designed chemistries
CL Senaratne, JD Gallagher, T Aoki, J Kouvetakis, J Menendez
Chemistry of Materials 26 (20), 6033-6041, 2014
692014
Ge1-ySny (y= 0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties
CL Senaratne, JD Gallagher, L Jiang, T Aoki, DJ Smith, J Menendez, ...
Journal of Applied Physics 116 (13), 2014
552014
Direct gap Ge1-ySny alloys: Fabrication and design of mid-IR photodiodes
CL Senaratne, PM Wallace, JD Gallagher, PE Sims, J Kouvetakis, ...
Journal of Applied Physics 120 (2), 2016
502016
Deviations from Vegard's law in semiconductor thin films measured with X-ray diffraction and Rutherford backscattering: The Ge1-ySny and Ge1-xSix cases
C Xu, CL Senaratne, RJ Culbertson, J Kouvetakis, J Menéndez
Journal of Applied Physics 122 (12), 2017
492017
Experimental doping dependence of the lattice parameter in -type Ge: Identifying the correct theoretical framework by comparison with Si
C Xu, CL Senaratne, J Kouvetakis, J Menendez
Physical Review B 93 (4), 041201, 2016
432016
Non-radiative recombination in Ge1− ySny light emitting diodes: The role of strain relaxation in tuned heterostructure designs
JD Gallagher, CL Senaratne, C Xu, P Sims, T Aoki, DJ Smith, J Menendez, ...
Journal of Applied Physics 117 (24), 2015
362015
Ge1− x− ySixSny light emitting diodes on silicon for mid-infrared photonic applications
JD Gallagher, C Xu, CL Senaratne, T Aoki, PM Wallace, J Kouvetakis, ...
Journal of Applied Physics 118 (13), 2015
312015
Direct bandgap cross-over point of Ge1-ySny grown on Si estimated through temperature-dependent photoluminescence studies
TR Harris, MY Ryu, YK Yeo, B Wang, CL Senaratne, J Kouvetakis
Journal of Applied Physics 120 (8), 2016
302016
Frustrated incomplete donor ionization in ultra-low resistivity germanium films
C Xu, CL Senaratne, J Kouvetakis, J Menendez
Applied Physics Letters 105 (23), 2014
302014
Compositional dependence of optical interband transition energies in GeSn and GeSiSn alloys
C Xu, CL Senaratne, J Kouvetakis, J Menéndez
Solid-State Electronics 110, 76-82, 2015
242015
Band gap-engineered group-IV optoelectronic semiconductors, photodiodes and prototype photovoltaic devices
RT Beeler, J Gallagher, C Xu, L Jiang, CL Senaratne, DJ Smith, ...
ECS Journal of Solid State Science and Technology 2 (9), Q172, 2013
242013
Molecular epitaxy of pseudomorphic Ge1− ySny (y= 0.06–0.17) structures and devices on Si/Ge at ultra-low temperatures via reactions of Ge4H10 and SnD4
PM Wallace, CL Senaratne, C Xu, PE Sims, J Kouvetakis, J Menendez
Semiconductor Science and Technology 32 (2), 025003, 2017
172017
Electroluminescence from Ge1− ySny diodes with degenerate pn junctions
JD Gallagher, CL Senaratne, PM Wallace, J Menendez, J Kouvetakis
Applied Physics Letters 107 (12), 2015
172015
Ultralow Resistivity Ge: Sb heterostructures on Si Using Hydride Epitaxy of Deuterated Stibine and Trigermane
C Xu, CL Senaratne, P Sims, J Kouvetakis, J Menendez
ACS Applied Materials & Interfaces 8 (36), 23810-23819, 2016
162016
Optical properties of Ge-rich alloys: Compositional dependence of the lowest direct and indirect gaps
C Xu, JD Gallagher, CL Senaratne, J Menendez, J Kouvetakis
Physical Review B 93 (12), 125206, 2016
162016
In situ low temperature As-doping of Ge films using As (SiH3) 3 and As (GeH3) 3: fundamental properties and device prototypes
C Xu, JD Gallagher, PM Wallace, CL Senaratne, P Sims, J Menendez, ...
Semiconductor Science and Technology 30 (10), 105028, 2015
162015
Materials physics of GeSn-based semiconductor lasers
J Menendez, PM Wallace, C Xu, CL Senaratne, JD Gallagher, ...
Materials Today: Proceedings 14, 38-42, 2019
122019
The system can't perform the operation now. Try again later.
Articles 1–20