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Tianxiang Dai
Tianxiang Dai
Verified email at warwick.ac.uk
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Cited by
Year
Built-in reliability design of highly integrated solid-state power switches with metal bump interconnects
J Li, A Castellazzi, T Dai, M Corfield, AK Solomon, CM Johnson
IEEE Transactions on Power Electronics 30 (5), 2587-2600, 2014
392014
The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment
AB Renz, VA Shah, OJ Vavasour, Y Bonyadi, F Li, T Dai, GWC Baker, ...
Journal of Applied Physics 127 (2), 2020
162020
4H‐SiC trench MOSFET with integrated fast recovery MPS diode
T Dai, CW Chan, X Deng, H Jiang, PM Gammon, MR Jennings, ...
Electronics Letters 54 (3), 167-169, 2018
162018
High temperature nitridation of 4H-SiC MOSFETs
H Rong, YK Sharma, TX Dai, F Li, MR Jennings, S Russell, DM Martin, ...
Materials Science Forum 858, 623-626, 2016
132016
The improvement of atomic layer deposited SiO2/4H-SiC interfaces via a high temperature forming gas anneal
AB Renz, OJ Vavasour, PM Gammon, F Li, T Dai, M Antoniou, GWC Baker, ...
Materials Science in Semiconductor Processing 122, 105527, 2021
122021
Optimization of 1700-V 4H-SiC superjunction Schottky rectifiers with implanted p-pillars for practical realization
GWC Baker, C Chan, AB Renz, Y Qi, T Dai, F Li, VA Shah, PA Mawby, ...
IEEE Transactions on Electron Devices 68 (7), 3497-3504, 2021
62021
Development of high-quality gate oxide on 4H-SiC using atomic layer deposition
AB Renz, OJ Vavasour, PM Gammon, F Li, TX Dai, S Esfahani, ...
Materials Science Forum 1004, 547-553, 2020
62020
A robust and area-efficient guard ring edge termination technique for 4H-SiC power MOSFETs
X Deng, Y Guo, T Dai, C Li, X Chen, W Chen, Y Zhang, B Zhang
Materials Science in Semiconductor Processing 68, 108-113, 2017
62017
Initial investigations into the MOS interface of freestanding 3C-SiC layers for device applications
AB Renz, F Li, OJ Vavasour, PM Gammon, T Dai, GWC Baker, F La Via, ...
Semiconductor Science and Technology 36 (5), 055006, 2021
52021
4H-SiC Trench Structure Fabrication with Al2O3 Etching Mask
TX Dai, Z Mohammadi, S Russell, CA Fisher, MR Jennings, P Mawby
Materials Science Forum 897, 371-374, 2017
52017
Real-time degradation monitoring and lifetime estimation of 3D integrated bond-wire-less double-sided cooled power switch technologies
T Dai, JF Li, M Corfield, A Castellazzi, P Wheeler
2013 15th European Conference on Power Electronics and Applications (EPE), 1-8, 2013
52013
Optimization of 1700-V 4H-SiC Semi-Superjunction Schottky Rectifiers With Implanted P-Pillars for Practical Realization
GWC Baker, PM Gammon, AB Renz, O Vavasour, CW Chan, Y Qi, T Dai, ...
IEEE Transactions on Electron Devices 69 (4), 1924-1930, 2022
42022
Integrated matrix converter switch
A Castellazzi, T Dai, J Li, A Solomon, A Trentin, P Wheeler
2013 IEEE 10th International Conference on Power Electronics and Drive …, 2013
42013
Functional oxide as an extreme high-k dielectric towards 4H-SiC MOSFET incorporation
S Russell, MR Jennings, TX Dai, F Li, DP Hamilton, CA Fisher, ...
Materials Science Forum 897, 155-158, 2017
32017
A 650V Hybrid-Channel SiC Trench MOSFET with Improved On-State Performance
L Zhang, T Dai, P Gammon, V Shah, P Mawby, M Antoniou
2022 IEEE Energy Conversion Congress and Exposition (ECCE), 1-6, 2022
22022
A compact trench-assisted space-modulated JTE design for high-voltage 4H-SiC devices
T Dai, L Zhang, O Vavasour, AB Renz, VA Shah, M Antoniou, PA Mawby, ...
IEEE Transactions on Electron Devices 68 (3), 1162-1167, 2021
22021
Design optimization of 1.2 kV 4H-SiC trench MOSFET
TX Dai, PM Gammon, V Shah, X Deng, MR Jennings, P Mawby
Materials Science Forum 963, 605-608, 2019
22019
Safe-operating-area of snubberless series connected silicon and SiC power devices
Z Davletzhanova, T Dai, O Alatise, JO Gonzalez, P Mawby, R Bonyadi, ...
2018 IEEE Energy Conversion Congress and Exposition (ECCE), 1875-1881, 2018
22018
Comparison of a 3.3 kV SiC Hybrid-Channel Trench MOSFET and a Planar MOSFET
L Zhang, T Dai, P Gammon, V Shah, P Mawby, M Antoniou
2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe …, 2022
12022
A Study of High Resistivity Semi-Insulating 4H-SiC Epilayers Formed via the Implantation of Germanium and Vanadium
AB Renz, OJ Vavasour, M Rommel, GWC Baker, PM Gammon, TX Dai, ...
Materials Science Forum 1062, 523-527, 2022
12022
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