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Lin Xu
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Aligned, high-density semiconducting carbon nanotube arrays for high-performance electronics
L Liu, J Han, L Xu, J Zhou, C Zhao, S Ding, H Shi, M Xiao, L Ding, Z Ma, ...
Science 368 (6493), 850-856, 2020
3352020
Dirac-source field-effect transistors as energy-efficient, high-performance electronic switches
C Qiu, F Liu, L Xu, B Deng, M Xiao, J Si, L Lin, Z Zhang, J Wang, H Guo, ...
Science 361 (6400), 387-392, 2018
2622018
Gigahertz integrated circuits based on carbon nanotube films
D Zhong, Z Zhang, L Ding, J Han, M Xiao, J Si, L Xu, C Qiu, LM Peng
Nature Electronics 1 (1), 40-45, 2018
1462018
Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment
Y Wang, S Liu, Q Li, R Quhe, C Yang, Y Guo, X Zhang, Y Pan, J Li, ...
Reports on Progress in Physics 84 (5), 056501, 2021
962021
Sub-10 nm two-dimensional transistors: Theory and experiment
R Quhe*, L Xu*, S Liu*, C Yang*, Y Wang, H Li, J Yang, Q Li, B Shi, Y Li, ...
Physics Reports 938, 1-72, 2021
952021
Sub 10 nm Bilayer Bi2O2Se Transistors
J Yang, R Quhe, Q Li, S Liu, L Xu, Y Pan, H Zhang, X Zhang, J Li, J Yan, ...
Advanced Electronic Materials 5 (3), 1800720, 2019
792019
Ballistic two-dimensional InSe transistors
J Jiang*, L Xu*, C Qiu, LM Peng
Nature 616 (7957), 470-475, 2023
732023
Radiofrequency transistors based on aligned carbon nanotube arrays
H Shi, L Ding, D Zhong, J Han, L Liu, L Xu, P Sun, H Wang, J Zhou, ...
Nature Electronics 4 (6), 405-415, 2021
672021
Excellent device performance of sub‐5‐nm monolayer tellurene transistors
J Yan, H Pang, L Xu, J Yang, R Quhe, X Zhang, Y Pan, B Shi, S Liu, L Xu, ...
Advanced Electronic Materials 5 (7), 1900226, 2019
662019
Sub-5 nm Monolayer MoS2 Transistors toward Low-Power Devices
H Zhang, B Shi, L Xu, J Yan, W Zhao, Z Zhang, Z Zhang, J Lu
ACS Applied Electronic Materials 3 (4), 1560-1571, 2021
582021
Ohmic contacts between monolayer WSe2 and two-dimensional titanium carbides
Q Li, J Yang, R Quhe, Q Zhang, L Xu, Y Pan, M Lei, J Lu
Carbon 135, 125-133, 2018
582018
Can carbon nanotube transistors be scaled down to the sub-5 nm gate length?
L Xu, J Yang, C Qiu, S Liu, W Zhou, Q Li, B Shi, J Ma, C Yang, J Lu, ...
ACS Applied Materials & Interfaces 13 (27), 31957-31967, 2021
412021
Sub-5-nm monolayer silicane transistor: A first-principles quantum transport simulation
Y Pan, J Dai, L Xu, J Yang, X Zhang, J Yan, J Li, B Shi, S Liu, H Hu, M Wu, ...
Physical Review Applied 14 (2), 024016, 2020
402020
Performance limit of monolayer WSe2 transistors; significantly outperform their MoS2 counterpart
X Sun*, L Xu*, Y Zhang, W Wang, S Liu, C Yang, Z Zhang, J Lu
ACS applied materials & interfaces 12 (18), 20633-20644, 2020
392020
Advances in high‐performance carbon‐nanotube thin‐film electronics
J Si, L Xu, M Zhu, Z Zhang, LM Peng
Advanced Electronic Materials 5 (8), 1900122, 2019
362019
Lowering interface state density in carbon nanotube thin film transistors through using stacked Y2O3/HfO2 gate dielectric
L Xu, N Gao, Z Zhang, LM Peng
Applied Physics Letters 113 (8), 2018
342018
Enhancement‐mode field‐effect transistors and high‐speed integrated circuits based on aligned carbon nanotube films
Y Lin, S Liang, L Xu, L Liu, Q Hu, C Fan, Y Liu, J Han, Z Zhang, LM Peng
Advanced Functional Materials 32 (11), 2104539, 2022
312022
Insight into ballisticity of room-temperature carrier transport in carbon nanotube field-effect transistors
L Xu, C Qiu, C Zhao, Z Zhang, LM Peng
IEEE Transactions on Electron Devices 66 (8), 3535-3540, 2019
282019
Performance limit of ultrathin GaAs transistors
Q Li, S Fang, S Liu, L Xu, L Xu, C Yang, J Yang, B Shi, J Ma, J Yang, ...
ACS Applied Materials & Interfaces 14 (20), 23597-23609, 2022
252022
Suppression of leakage current in carbon nanotube field-effect transistors
L Xu, C Qiu, L Peng, Z Zhang
Nano Research 14, 976-981, 2021
242021
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