Lin Xu
Lin Xu
Verified email at hku.hk
Title
Cited by
Cited by
Year
Dirac-source field-effect transistors as energy-efficient, high-performance electronic switches
C Qiu, F Liu, L Xu, B Deng, M Xiao, J Si, L Lin, Z Zhang, J Wang, H Guo, ...
Science 361 (6400), 387-392, 2018
1192018
Aligned, high-density semiconducting carbon nanotube arrays for high-performance electronics
L Liu, J Han, L Xu, J Zhou, C Zhao, S Ding, H Shi, M Xiao, L Ding, Z Ma, ...
Science 368 (6493), 850-856, 2020
972020
Gigahertz integrated circuits based on carbon nanotube films
D Zhong, Z Zhang, L Ding, J Han, M Xiao, J Si, L Xu, C Qiu, LM Peng
Nature Electronics 1 (1), 40-45, 2018
842018
Sub 10 nm Bilayer Bi2O2Se Transistors
J Yang, R Quhe, Q Li, S Liu, L Xu, Y Pan, H Zhang, X Zhang, J Li, J Yan, ...
Advanced Electronic Materials 5 (3), 1800720, 2019
402019
Ohmic contacts between monolayer WSe2 and two-dimensional titanium carbides
Q Li, J Yang, R Quhe, Q Zhang, L Xu, Y Pan, M Lei, J Lu
Carbon 135, 125-133, 2018
282018
Excellent device performance of sub‐5‐nm monolayer tellurene transistors
J Yan, H Pang, L Xu, J Yang, R Quhe, X Zhang, Y Pan, B Shi, S Liu, L Xu, ...
Advanced Electronic Materials 5 (7), 1900226, 2019
272019
Advances in High‐Performance Carbon‐Nanotube Thin‐Film Electronics
J Si, L Xu, M Zhu, Z Zhang, LM Peng
Advanced Electronic Materials 5 (8), 1900122, 2019
162019
Sub-5 nm monolayer black phosphorene tunneling transistors
H Li, B Shi, Y Pan, J Li, L Xu, L Xu, Z Zhang, F Pan, J Lu
Nanotechnology 29 (48), 485202, 2018
162018
Lowering interface state density in carbon nanotube thin film transistors through using stacked Y2O3/HfO2 gate dielectric
L Xu, N Gao, Z Zhang, LM Peng
Applied Physics Letters 113 (8), 083105, 2018
132018
Performance Limit of Monolayer WSe2 Transistors; Significantly Outperform Their MoS2 Counterpart
X Sun, L Xu, Y Zhang, W Wang, S Liu, C Yang, Z Zhang, J Lu
ACS applied materials & interfaces 12 (18), 20633-20644, 2020
122020
Unusual Fermi‐Level Pinning and Ohmic Contact at Monolayer Bi2O2Se–Metal Interface
S Liu, L Xu, Y Pan, J Yang, J Li, X Zhang, L Xu, H Pang, J Yan, B Shi, ...
Advanced Theory and Simulations 2 (5), 1800178, 2019
122019
Computational study of ohmic contact at bilayer InSe-metal interfaces: Implications for field-effect transistors
L Xu, Y Pan, S Liu, B Shi, L Xu, J Yang, J Yan, H Pang, X Zhang, C Yang, ...
ACS Applied Nano Materials 2 (11), 6898-6908, 2019
92019
Insight into ballisticity of room-temperature carrier transport in carbon nanotube field-effect transistors
L Xu, C Qiu, C Zhao, Z Zhang, LM Peng
IEEE Transactions on Electron Devices 66 (8), 3535-3540, 2019
92019
Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment
Y Wang, S Liu, Q Li, R Quhe, C Yang, Y Guo, X Zhang, Y Pan, J Li, ...
Reports on Progress in Physics, 2021
82021
Sub-5 nm Monolayer MoS2 Transistors toward Low-Power Devices
H Zhang, B Shi, L Xu, J Yan, W Zhao, Z Zhang, Z Zhang, J Lu
ACS Applied Electronic Materials 3 (4), 1560-1571, 2021
82021
Negative capacitance tunneling field effect transistors based on monolayer arsenene, antimonene, and bismuthene
H Li, P Xu, L Xu, Z Zhang, J Lu
Semiconductor Science and Technology 34 (8), 085006, 2019
82019
Suppression of leakage current in carbon nanotube field-effect transistors
L Xu, C Qiu, L Peng, Z Zhang
Nano Research 14 (4), 976-981, 2021
72021
Radiofrequency transistors based on aligned carbon nanotube arrays
H Shi, L Ding, D Zhong, J Han, L Liu, L Xu, P Sun, H Wang, J Zhou, ...
Nature Electronics 4 (6), 405-415, 2021
62021
Sub-5-nm Monolayer Silicane Transistor: A First-Principles Quantum Transport Simulation
Y Pan, J Dai, L Xu, J Yang, X Zhang, J Yan, J Li, B Shi, S Liu, H Hu, M Wu, ...
Physical Review Applied 14 (2), 024016, 2020
62020
Planar Direction‐Dependent Interfacial Properties in Monolayer In2Se3–Metal Contacts
C Yang, X Zhang, X Sun, H Zhang, H Tang, B Shi, H Pang, L Xu, S Liu, ...
physica status solidi (b) 257 (1), 1900198, 2020
62020
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Articles 1–20