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ALESSANDRO PACCAGNELLA
ALESSANDRO PACCAGNELLA
Dipartimento di Ingegneria dell'Informazione, Università di Padova
Verified email at dei.unipd.it
Title
Cited by
Cited by
Year
Observation of a new boson at a mass of 125 GeV with the CMS experiment at the LHC
S Chatrchyan, V Khachatryan, AM Sirunyan, A Tumasyan, W Adam, ...
Physics Letters B 716 (1), 30-61, 2012
20718*2012
The large area telescope on the Fermi gamma-ray space telescope mission
WB Atwood, AA Abdo, M Ackermann, W Althouse, B Anderson, ...
The Astrophysical Journal 697 (2), 1071, 2009
50772009
The CMS experiment at the CERN LHC
S Chatrchyan, EA de Wolf, P Van Mechelen
Journal of instrumentation.-Bristol, 2006, currens 3, S08004, 2008
30612008
Fermi large area telescope first source catalog
AA Abdo, M Ackermann, M Ajello, A Allafort, E Antolini, WB Atwood, ...
The Astrophysical Journal Supplement Series 188 (2), 405, 2010
13752010
Layout techniques to enhance the radiation tolerance of standard CMOS technologies demonstrated on a pixel detector readout chip
W Snoeys, F Faccio, M Burns, M Campbell, E Cantatore, N Carrer, ...
Nuclear Instruments and Methods in Physics Research Section A: accelerators …, 2000
2412000
SVX', the new CDF silicon vertex detector
P Azzi, N Bacchetta, BA Barnett, M Bailey, F Bedeschi, D Bisello, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 1995
2221995
Fermi large area telescope observations of the Vela pulsar
AA Abdo, M Ackermann, WB Atwood, R Bagagli, L Baldini, J Ballet, ...
The Astrophysical Journal 696 (2), 1084, 2009
2212009
The on-orbit calibration of the Fermi Large Area Telescope
AA Abdo, M Ackermann, M Ajello, J Ampe, B Anderson, WB Atwood, ...
Astroparticle Physics 32 (3-4), 193-219, 2009
2182009
Radiation-induced short channel (RISCE) and narrow channel (RINCE) effects in 65 and 130 nm MOSFETs
F Faccio, S Michelis, D Cornale, A Paccagnella, S Gerardin
IEEE Transactions on Nuclear Science 62 (6), 2933-2940, 2015
2062015
Present and future non-volatile memories for space
S Gerardin, A Paccagnella
IEEE Transactions on nuclear science 57 (6), 3016-3039, 2010
2052010
Radiation induced leakage current and stress induced leakage current in ultra-thin gate oxides
M Ceschia, A Paccagnella, A Cester, A Scarpa, G Ghidini
IEEE Transactions on Nuclear Science 45 (6), 2375-2382, 1998
1941998
Ionizing radiation induced leakage current on ultra-thin gate oxides
A Scarpa, A Paccagnella, F Montera, G Ghibaudo, G Pananakakis, ...
IEEE Transactions on Nuclear Science 44 (6), 1818-1825, 1997
1871997
Identification and classification of single-event upsets in the configuration memory of SRAM-based FPGAs
M Ceschia, M Violante, MS Reorda, A Paccagnella, P Bernardi, ...
IEEE Transactions on Nuclear Science 50 (6), 2088-2094, 2003
1712003
Radiation effects in flash memories
S Gerardin, M Bagatin, A Paccagnella, K Grürmann, F Gliem, TR Oldham, ...
IEEE Transactions on Nuclear Science 60 (3), 1953-1969, 2013
1622013
Hydrated-layer formation during dissolution of complex silicate glasses and minerals
JC Petit, G Della Mea, JC Dran, MC Magonthier, PA Mando, ...
Geochimica et Cosmochimica Acta 54 (7), 1941-1955, 1990
1621990
Evaluating the effects of SEUs affecting the configuration memory of an SRAM-based FPGA
M Bellato, P Bernardi, D Bortolato, A Candelori, M Ceschia, ...
Proceedings Design, Automation and Test in Europe Conference and Exhibition …, 2004
1322004
Aspect ratio calculation in n-channel MOSFETs with a gate-enclosed layout
A Giraldo, A Paccagnella, A Minzoni
Solid-State Electronics 44 (6), 981-989, 2000
1232000
Radiation effects on floating-gate memory cells
G Cellere, P Pellati, A Chimenton, J Wyss, A Modelli, L Larcher, ...
IEEE Transactions on Nuclear Science 48 (6), 2222-2228, 2001
1112001
A new hardware/software platform and a new 1/E neutron source for soft error studies: Testing FPGAs at the ISIS facility
M Violante, L Sterpone, A Manuzzato, S Gerardin, P Rech, M Bagatin, ...
IEEE Transactions on Nuclear Science 54 (4), 1184-1189, 2007
1072007
Influence of LDD Spacers and H+Transport on the Total-Ionizing-Dose Response of 65-nm MOSFETs Irradiated to Ultrahigh Doses
F Faccio, G Borghello, E Lerario, DM Fleetwood, RD Schrimpf, H Gong, ...
IEEE Transactions on Nuclear Science 65 (1), 164-174, 2017
1062017
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