| Isotype Heterojunction Solar Cells Using n-Type Sb2Se3 Thin Films TDC Hobson, LJ Phillips, OS Hutter, H Shiel, JEN Swallow, CN Savory, ... Chemistry of Materials 32 (6), 2621-2630, 2020 | 103 | 2020 |
| Transition from electron accumulation to depletion at β-Ga2O3 surfaces: The role of hydrogen and the charge neutrality level JEN Swallow, JB Varley, LAH Jones, JT Gibbon, LFJ Piper, VR Dhanak, ... APL Materials 7 (2), 2019 | 88 | 2019 |
| Resonant Ta Doping for Enhanced Mobility in Transparent Conducting SnO2 BAD Williamson, TJ Featherstone, SS Sathasivam, JEN Swallow, H Shiel, ... Chemistry of Materials 32 (5), 1964-1973, 2020 | 78 | 2020 |
| Natural Band Alignments and Band Offsets of Sb2Se3 Solar Cells H Shiel, OS Hutter, LJ Phillips, JEN Swallow, LAH Jones, TJ Featherstone, ... ACS Applied Energy Materials 3 (12), 11617-11626, 2020 | 73 | 2020 |
| A CO2‐Tolerant Perovskite Oxide with High Oxide Ion and Electronic Conductivity M Li, H Niu, J Druce, H Téllez, T Ishihara, JA Kilner, H Gasparyan, ... Advanced Materials 32 (4), 1905200, 2020 | 71 | 2020 |
| Influence of Polymorphism on the Electronic Structure of Ga2O3 JEN Swallow, C Vorwerk, P Mazzolini, P Vogt, O Bierwagen, A Karg, ... Chemistry of Materials 32 (19), 8460-8470, 2020 | 64 | 2020 |
| Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition JW Roberts, PR Chalker, B Ding, RA Oliver, JT Gibbon, LAH Jones, ... Journal of Crystal Growth 528, 125254, 2019 | 55 | 2019 |
| Modular Design via Multiple Anion Chemistry of the High Mobility van der Waals Semiconductor Bi4O4SeCl2 QD Gibson, TD Manning, M Zanella, T Zhao, PAE Murgatroyd, ... Journal of the American Chemical Society 142 (2), 847-856, 2019 | 45 | 2019 |
| Tackling Disorder in -Ga O LE Ratcliff, T Oshima, F Nippert, BM Janzen, E Kluth, R Goldhahn, ... Advanced Materials 34 (37), 2204217, 2022 | 37 | 2022 |
| Evidence of a second-order Peierls-driven metal-insulator transition in crystalline MJ Wahila, G Paez, CN Singh, A Regoutz, S Sallis, MJ Zuba, J Rana, ... Physical Review Materials 3 (7), 074602, 2019 | 35 | 2019 |
| Band alignment of Sb2O3 and Sb2Se3 H Shiel, TDC Hobson, OS Hutter, LJ Phillips, MJ Smiles, LAH Jones, ... Journal of Applied Physics 129 (23), 2021 | 28 | 2021 |
| Sb 5s 2 lone pairs and band alignment of Sb 2 Se 3: a photoemission and density functional theory study CH Don, H Shiel, TDC Hobson, CN Savory, JEN Swallow, MJ Smiles, ... Journal of Materials Chemistry C 8 (36), 12615-12622, 2020 | 28 | 2020 |
| Na 2 Fe 2 OS 2, a new earth abundant oxysulphide cathode material for Na-ion batteries J Gamon, AJ Perez, LAH Jones, M Zanella, LM Daniels, RE Morris, ... Journal of Materials Chemistry A 8 (39), 20553-20569, 2020 | 25 | 2020 |
| Ge 4s 2 lone pairs and band alignments in GeS and GeSe for photovoltaics MJ Smiles, JM Skelton, H Shiel, LAH Jones, JEN Swallow, HJ Edwards, ... Journal of Materials Chemistry A 9 (39), 22440-22452, 2021 | 24 | 2021 |
| Band alignments at Ga2O3 heterojunction interfaces with Si and Ge JT Gibbon, L Jones, JW Roberts, M Althobaiti, PR Chalker, IZ Mitrovic, ... AIP Advances 8 (6), 2018 | 24 | 2018 |
| Effect of metal doping in Bi2WO6 micro-flowers for enhanced photoelectrochemical water splitting S Bera, S Samajdar, S Pal, PS Das, LAH Jones, H Finch, VR Dhanak, ... Ceramics International 48 (23), 35814-35824, 2022 | 22 | 2022 |
| Band Alignments, Electronic Structure, and Core-Level Spectra of Bulk Molybdenum Dichalcogenides (MoS2, MoSe2, and MoTe2) LAH Jones, Z Xing, JEN Swallow, H Shiel, TJ Featherstone, MJ Smiles, ... The Journal of Physical Chemistry C 126 (49), 21022-21033, 2022 | 20 | 2022 |
| Sn lone pairs and the electronic structure of tin sulphides: A photoreflectance, high-energy photoemission, and theoretical investigation LAH Jones, WM Linhart, N Fleck, JEN Swallow, PAE Murgatroyd, H Shiel, ... Physical Review Materials 4 (7), 074602, 2020 | 19 | 2020 |
| P-type conductivity in Sn-doped Sb2Se3 TDC Hobson, H Shiel, CN Savory, JEN Swallow, LAH Jones, ... Journal of Physics: Energy 4 (4), 045006, 2022 | 17 | 2022 |
| Investigation of Tm2O3 as a gate dielectric for Ge MOS devices L Žurauskaitė, L Jones, VR Dhanak, IZ Mitrovic, PE Hellström, M Östling ECS Transactions 86 (7), 67, 2018 | 15 | 2018 |
