| Origin of clear ferromagnetism for p-type GaN implanted with Fe+ (5 and 10at.%) Y Shon, S Lee, HC Jeon, YS Park, DY Kim, TW Kang, JS Kim, EK Kim, ... Applied physics letters 89 (8), 2006 | 23 | 2006 |
| Relevant correlation between electrical and magnetic properties for p-type InP: Zn implanted with Mn (10 at.%) JS Kim, EK Kim, Y Shon, S Lee Applied Physics Letters 93 (24), 2008 | 22 | 2008 |
| Zero-internal fields in nonpolar InGaN/GaN multi-quantum wells grown by the multi-buffer layer technique H Song, JS Kim, EK Kim, YG Seo, SM Hwang Nanotechnology 21 (13), 134026, 2010 | 17 | 2010 |
| Study on carrier trapping and emission processes in InAs/GaAs self-assembled quantum dots by varying filling pulse width during DLTS measurements JS Kim, EK Kim, JO Kim, SJ Lee, SK Noh Superlattices and Microstructures 46 (1-2), 312-317, 2009 | 14 | 2009 |
| Electrical characterization of InAs/InP self-assembled quantum dots by deep-level transient spectroscopy EK Kim, JS Kim, H Hwang, K Park, E Yoon, JH Kim, IW Park, YJ Park Japanese journal of applied physics 43 (6S), 3825, 2004 | 12 | 2004 |
| Study on the energy-band structure of an InAs/InGaAs/GaAs quantum-dot infrared photodetector structure JS Kim, EK Kim, JD Song, WJ Choi, JI Lee Journal of the Korean Physical Society 49, 2006 | 9 | 2006 |
| Electrical properties of InAs/InGaAs/GaAs quantum-dot infrared photodetectors JS Kim, EK Kim, WJ Choi, JD Song, JI Lee Japanese journal of applied physics 45 (6S), 5575, 2006 | 8 | 2006 |
| Nonpolar growth and characterization of a-plane InGaN/GaN quantum well structures with different indium compositions H Song, JS Kim, EK Kim, SH Lee, JB Kim, J Son, SM Hwang Solid-State Electronics 54 (10), 1221-1226, 2010 | 7 | 2010 |
| Field dependence of barrier heights and luminescence properties in polar and nonpolar InGaN/GaN single quantum wells H Song, JS Kim, EK Kim, SH Lee, SM Hwang Applied Physics Letters 95 (18), 2009 | 7 | 2009 |
| Energy Levels of InAs/InP Quantum Dots by Thermal Treatment. EK Kim, JS Kim, K Park, E Yoon, SK Noh Journal of the Korean Physical Society 46 (9), 117, 2005 | 7 | 2005 |
| Fabrication and characterization of quantum-dot tunneling devices with metal-oxide semiconductors JH Kim, EK Kim, MS Song, YH Kim, J Kim Journal of the Korean Physical Society 45 (9), 795-798, 2004 | 7 | 2004 |
| Electrical characterization of InAs/InP self-assembled quantum dots with InGaAs strain-relief layers JS Kim, EK Kim, H Hwang, K Park, E Yoon, IW Park, YJ Park JOURNAL-KOREAN PHYSICAL SOCIETY 45, 170-174, 2004 | 7 | 2004 |
| Energy level study of InAs/GaAs quantum dot by electrical measurements JS Kim, EK Kim, SJ Lee, SK Noh Journal of the Korean Physical Society 46 (9), 163, 2005 | 6 | 2005 |
| Structural, optical, and electrical characterizations of a quantum cascade laser structure HK Park, JS Kim, EK Kim, CH Lee, JD Song, IK Han Journal of the Korean Physical Society 45, 2004 | 6 | 2004 |
| Study on defects and confined energy level of InAs/GaAs quantum dot system JS Kim, EK Kim, SJ Lee, SK Noh Physica B: Condensed Matter 376, 877-880, 2006 | 5 | 2006 |
| InAs/AlAs quantum dots with InGaAs insertion layer: dependence of the indium composition and the thickness SK Park, J Tatebayashi, T Yang, JS Kim, EK Kim, Y Arakawa Physica E: Low-dimensional Systems and Nanostructures 26 (1-4), 138-142, 2005 | 5 | 2005 |
| Analysis of energy levels of InAs/GaAs self‐assembled quantum dots by using C –V and deep level transient spectroscopy JS Kim, EK Kim, JO Kim, SJ Lee, SK Noh physica status solidi (b) 246 (4), 808-811, 2009 | 4 | 2009 |
| Electrical properties of digital-alloy (AlxGa1-x) As/GaAs during molecular beam epitaxy growth JS Kim, EK Kim, JD Song, JI Lee Journal of the Korean Physical Society 50 (6), 1912-1915, 2007 | 4 | 2007 |
| Energy levels of InAs/InP QD system with GaAs and InGaAs insertion layers by CV and DLTS methods JS Kim, EK Kim, K Park, E Yoon, IW Park, YJ Park Journal of the Korean Physical Society 45, 2004 | 4 | 2004 |
| Reduction of defects in GaN on reactive ion beam treated sapphire by annealing D Byun, J Jhin, S Cho, J Kim, SJ Lee, CH Hong, G Kim, WK Choi physica status solidi (b) 228 (1), 315-318, 2001 | 4 | 2001 |
