Shunta Harada
Shunta Harada
Verified email at nagoya-u.jp - Homepage
Title
Cited by
Cited by
Year
Thermoelectric properties and crystallographic shear structures in titanium oxides of the Magneli phases
S Harada, K Tanaka, H Inui
Journal of applied physics 108 (8), 083703, 2010
1332010
High-efficiency conversion of threading screw dislocations in 4H-SiC by solution growth
Y Yamamoto, S Harada, K Seki, A Horio, T Mitsuhashi, T Ujihara
Applied Physics Express 5 (11), 115501, 2012
692012
Improvement of Grain-Boundary Conductivity of Trivalent Cation-Doped Barium Zirconate Sintered at 1600 C by Co-doping Scandium and Yttrium
S Imashuku, T Uda, Y Nose, K Kishida, S Harada, H Inui, Y Awakura
Journal of the Electrochemical Society 155 (6), B581-B586, 2008
522008
Low-dislocation-density 4H-SiC crystal growth utilizing dislocation conversion during solution method
Y Yamamoto, S Harada, K Seki, A Horio, T Mitsuhashi, D Koike, ...
Applied Physics Express 7 (6), 065501, 2014
382014
Improvement mechanism of sputtered AlN films by high-temperature annealing
S Xiao, R Suzuki, H Miyake, S Harada, T Ujihara
Journal of Crystal Growth 502, 41-44, 2018
312018
Effect of aluminum addition on the surface step morphology of 4H–SiC grown from Si–Cr–C solution
T Mitani, N Komatsu, T Takahashi, T Kato, S Harada, T Ujihara, ...
Journal of Crystal Growth 423, 45-49, 2015
312015
Influence of solution flow on step bunching in solution growth of SiC crystals
C Zhu, S Harada, K Seki, H Zhang, H Niinomi, M Tagawa, T Ujihara
Crystal growth & design 13 (8), 3691-3696, 2013
272013
Nitrogen doping of 4H–SiC by the top-seeded solution growth technique using Si–Ti solvent
K Kusunoki, K Kamei, K Seki, S Harada, T Ujihara
Journal of crystal growth 392, 60-65, 2014
262014
Evolution of threading screw dislocation conversion during solution growth of 4H-SiC
S Harada, Y Yamamoto, K Seki, A Horio, T Mitsuhashi, M Tagawa, ...
APL Materials 1 (2), 022109, 2013
262013
Polytype transformation by replication of stacking faults formed by two-dimensional nucleation on spiral steps during SiC solution growth
S Harada, K Seki, Y Yamamoto, C Zhu, Y Yamamoto, S Arai, J Yamasaki, ...
Crystal growth & design 12 (6), 3209-3214, 2012
262012
Conversion mechanism of threading screw dislocation during SiC solution growth
T Ujihara, S Kozawa, K Seki, Y Yamamoto, S Harada
Materials Science Forum 717, 351-354, 2012
262012
Thermoelectric properties of ternary and Al-containing quaternary Ru1− xRexSiy chimney–ladder compounds
K Kishida, A Ishida, T Koyama, S Harada, NL Okamoto, K Tanaka, H Inui
Acta materialia 57 (6), 2010-2019, 2009
232009
Different behavior of threading edge dislocation conversion during the solution growth of 4H–SiC depending on the Burgers vector
S Harada, Y Yamamoto, K Seki, A Horio, M Tagawa, T Ujihara
Acta materialia 81, 284-290, 2014
212014
Polytype-selective growth of SiC by supersaturation control in solution growth
K Seki, S Kozawa, S Harada, T Ujihara, Y Takeda
Journal of crystal growth 360, 176-180, 2012
202012
Reduction of threading screw dislocation utilizing defect conversion during solution growth of 4H-SiC
S Harada, Y Yamamoto, K Seki, T Ujihara
Materials Science Forum 740, 189-192, 2013
192013
Achiral metastable crystals of sodium chlorate forming prior to chiral crystals in solution growth
H Niinomi, T Yamazaki, S Harada, T Ujihara, H Miura, Y Kimura, ...
Crystal growth & design 13 (12), 5188-5192, 2013
182013
High-speed prediction of computational fluid dynamics simulation in crystal growth
Y Tsunooka, N Kokubo, G Hatasa, S Harada, M Tagawa, T Ujihara
CrystEngComm 20 (41), 6546-6550, 2018
152018
Non-uniform electrodeposition of zinc on the (0001) plane
T Mitsuhashi, Y Ito, Y Takeuchi, S Harada, T Ujihara
Thin Solid Films 590, 207-213, 2015
152015
Emergence and Amplification of Chirality via Achiral–Chiral Polymorphic Transformation in Sodium Chlorate Solution Growth
H Niinomi, H Miura, Y Kimura, M Uwaha, H Katsuno, S Harada, T Ujihara, ...
Crystal growth & design 14 (7), 3596-3602, 2014
142014
Conversion Behavior of Threading Screw Dislocations on C Face with Different Surface Morphology During 4H-SiC Solution Growth
S Xiao, S Harada, K Murayama, M Tagawa, T Ujihara
Crystal Growth & Design 16 (11), 6436-6439, 2016
132016
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