m holland
m holland
TSMC Technology Inc.
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Cited by
Cited by
The fermionic hanbury brown and twiss experiment
M Henny, S Oberholzer, C Strunk, T Heinzel, K Ensslin, M Holland, ...
Science 284 (5412), 296-298, 1999
Barrier layer for FinFET channels
RK Oxland, M Van Dal, MC Holland, G Vellianitis, M Passlack
US Patent 9,214,555, 2015
In-plane gates and nanostructures fabricated by direct oxidation of semiconductor heterostructures with an atomic force microscope
R Held, T Vancura, T Heinzel, K Ensslin, M Holland, W Wegscheider
Applied Physics Letters 73 (2), 262-264, 1998
Nanolithography with an atomic force microscope for integrated fabrication of quantum electronic devices
M Wendel, S Kühn, H Lorenz, JP Kotthaus, M Holland
Applied physics letters 65 (14), 1775-1777, 1994
Semiconductor quantum point contact fabricated by lithography with an atomic force microscope
R Held, T Heinzel, P Studerus, K Ensslin, M Holland
Applied physics letters 71 (18), 2689-2691, 1997
Shot noise by quantum scattering in chaotic cavities
S Oberholzer, EV Sukhorukov, C Strunk, C Schönenberger, T Heinzel, ...
Physical review letters 86 (10), 2114, 2001
A planar Gunn diode operating above 100 GHz
A Khalid, NJ Pilgrim, GM Dunn, MC Holland, CR Stanley, IG Thayne, ...
IEEE Electron Device Letters 28 (10), 849-851, 2007
Internal structure of a Landau band induced by a lateral superlattice: a glimpse of Hofstadter's butterfly
T Schlösser, K Ensslin, JP Kotthaus, M Holland
Europhysics Letters 33 (9), 683, 1996
Coherent Population Trapping of Electron Spins in a High-Purity -Type GaAs Semiconductor
KMC Fu, C Santori, C Stanley, MC Holland, Y Yamamoto
Physical review letters 95 (18), 187405, 2005
Direct measurements of the spin gap in the two-dimensional electron gas of AlGaAs-GaAs heterojunctions
VT Dolgopolov, AA Shashkin, AV Aristov, D Schmerek, W Hansen, ...
Physical review letters 79 (4), 729, 1997
The Hanbury Brown and Twiss experiment with fermions
S Oberholzer, M Henny, C Strunk, C Schönenberger, T Heinzel, K Ensslin, ...
Physica E: Low-dimensional Systems and Nanostructures 6 (1-4), 314-317, 2000
Anisotropic piezoelectric effect in lateral surface superlattices
E Skuras, AR Long, IA Larkin, JH Davies, MC Holland
Demonstration of scaled Ge p-channel FinFETs integrated on Si
MJH Van Dal, G Vellianitis, G Doornbos, B Duriez, TM Shen, CC Wu, ...
2012 International Electron Devices Meeting, 23.5. 1-23.5. 4, 2012
50-nm T-gate metamorphic GaAs HEMTs with f/sub T/of 440 GHz and noise figure of 0.7 dB at 26 GHz
K Elgaid, H McLelland, M Holland, DAJ Moran, CR Stanley, IG Thayne
IEEE Electron Device Letters 26 (11), 784-786, 2005
Vertical gate-all-around field effect transistors and methods of forming same
MC Holland, B Duriez, M Van Dal
US Patent 9,520,466, 2016
Selective probing of ballistic electron orbits in rectangular antidot lattices
R Schuster, K Ensslin, JP Kotthaus, M Holland, C Stanley
Physical Review B 47 (11), 6843, 1993
Landau subbands generated by a lateral electrostatic superlattice-chasing the Hofstadter butterfly
T Schlösser, K Ensslin, JP Kotthaus, M Holland
Semiconductor Science and Technology 11 (11S), 1582, 1996
Ultrafast control of donor-bound electron spins with single detuned optical pulses
KMC Fu, SM Clark, C Santori, CR Stanley, MC Holland, Y Yamamoto
Nature Physics 4 (10), 780-784, 2008
Elastic strains in GaAs/AlAs quantum dots studied by high-resolution x-ray diffraction
V Holý, AA Darhuber, G Bauer, PD Wang, YP Song, CMS Torres, ...
Physical Review B 52 (11), 8348, 1995
One-dimensional electron channels in the quantum limit
H Drexler, W Hansen, S Manus, JP Kotthaus, M Holland, SP Beaumont
Physical Review B 49 (19), 14074, 1994
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