| Effect of GaN surface treatment on Al2O3/n-GaN MOS capacitors T Hossain, D Wei, JH Edgar, NY Garces, N Nepal, JK Hite, MA Mastro, ... Journal of Vacuum Science & Technology B 33 (6), 2015 | 46 | 2015 |
| Influence of atomic layer deposition temperatures on TiO2/n-Si MOS capacitor D Wei, T Hossain, NY Garces, N Nepal, HM Meyer, MJ Kirkham, CR Eddy, ... ECS Journal of Solid State Science and Technology 2 (5), N110, 2013 | 29 | 2013 |
| Insulating gallium oxide layer produced by thermal oxidation of gallium‐polar GaN T Hossain, D Wei, N Nepal, NY Garces, JK Hite, HM Meyer III, CR Eddy Jr, ... physica status solidi (c) 11 (3‐4), 565-568, 2014 | 19 | 2014 |
| Acid monolayer functionalized iron oxide nanoparticles as catalysts for carbohydrate hydrolysis M Ikenberry, L Peña, D Wei, H Wang, SH Bossmann, T Wilke, D Wang, ... Green chemistry 16 (2), 836-843, 2014 | 17 | 2014 |
| Atomic layer deposition TiO2–Al2O3 stack: An improved gate dielectric on Ga-polar GaN metal oxide semiconductor capacitors D Wei, JH Edgar, DP Briggs, ST Retterer, B Srijanto, DK Hensley, ... Journal of Vacuum Science & Technology B 32 (6), 2014 | 13 | 2014 |
| Comparison of the physical, chemical and electrical properties of ALD Al2O3 on c‐ and m‐ plane GaN D Wei, T Hossain, N Nepal, NY Garces, JK Hite, HM Meyer III, CR Eddy Jr, ... physica status solidi (c) 11 (3‐4), 898-901, 2014 | 7 | 2014 |
| A Comparison of N-Polar () GaN Surface Preparations for the Atomic Layer Deposition of Al2O3 D Wei, T Hossain, DP Briggs, JH Edgar ECS Journal of Solid State Science and Technology 3 (10), N127, 2014 | 5 | 2014 |
| Electrical characteristics of GaN and Si Based metal-oxide-semiconductor (MOS) capacitors TZ Hossain, D Wei, JH Edgar ECS Transactions 41 (3), 429, 2011 | 3 | 2011 |
| Study of high dielectric constant oxides on GaN for metal oxide semiconductor devices D Wei Kansas State University, 2014 | 1 | 2014 |
| Dry thermal oxidation of GaN with SEM, AFM and XPS characterization D Wei, JH Edgar, HM Meyer | | 2011 |
| ALD TiO2-Al2O3 stack: an improved gate dielectric on Ga-polar GaN MOSCAPs 2 D Wei, JH Edgar, DP Briggs, ST Retterer, B Srijanto, DK Hensley, ... | | |
