Neophytos Neophytou

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Mark LundstromProfessor of Electrical and Computer Engineering, Purdue UniversityVerified email at purdue.edu
Gerhard KlimeckProfessor of Electrical and Computer Engineering, Purdue UniversityVerified email at purdue.edu
Mischa ThesbergGlobal TCAD SolutionsVerified email at globaltcad.com
Hossein KaramitaheriUniversity of KashanVerified email at kashanu.ac.ir
Dario NarducciDepartment of Material Science, University of Milano BicoccaVerified email at unimib.it
Dmitri E. NikonovPrincipal Engineer, IntelVerified email at intel.com
Gengchiau LiangNational University of SingaporeVerified email at nus.edu.sg
Mahdi PourfathUniversity of TehranVerified email at ut.ac.ir
Samuel FosterPhD Student, University of WarwickVerified email at warwick.ac.uk
Abhijeet paulGraduate Student Purdue University, Device Engineer GlobalfoundriesVerified email at globalfoundries.com
Vassilios VargiamidisUniversity of WarwickVerified email at warwick.ac.uk
Laura de Sousa OliveiraUniversity of WyomingVerified email at uwyo.edu
Bruno LorenziMarie Skłodowska-Curie Postdoctoral Fellow @ University of Milano BicoccaVerified email at unimib.it
Marisol Martin-GonzalezProfessor & Group Leader - Micro & Nanotecnology Institute - IMN-CSICVerified email at csic.es
Siegfried SelberherrInstitute for Microelectronics, TU WienVerified email at TUWien.ac.at
Jing GuoProfessor, University of FloridaVerified email at ufl.edu
rahim faezsharif university of technologyVerified email at sharif.edu
Dr. Miguel Muñoz RojoTenured permanent researcher (CSIC) & Associate Prof. (University of Twente)Verified email at csic.es
Jaime Andres Perez TabordaUniversidad Nacional de ColombiaVerified email at unal.edu.co
RASEONG KIMIntel CorporationVerified email at intel.com

Neophytos Neophytou

School of Engineering, University of Warwick

Verified email at warwick.ac.uk - Homepage

electrical engineering nanotechnology


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Performance projections for ballistic graphene nanoribbon field-effect transistors G Liang, N Neophytou, DE Nikonov, MS Lundstrom IEEE Transactions on Electron Devices 54 (4), 677-682, 2007	316	2007
Thermoelectrics: From history, a window to the future D Beretta, N Neophytou, JM Hodges, MG Kanatzidis, D Narducci, ... Materials Science and Engineering: R: Reports 138, 100501, 2019	238	2019
Bandstructure effects in silicon nanowire electron transport N Neophytou, A Paul, MS Lundstrom, G Klimeck IEEE Transactions on Electron Devices 55 (6), 1286-1297, 2008	201	2008
Ballistic graphene nanoribbon metal-oxide-semiconductor field-effect transistors: A full real-space quantum transport simulation G Liang, N Neophytou, MS Lundstrom, DE Nikonov Journal of Applied Physics 102 (5), 054307, 2007	149	2007
Simultaneous increase in electrical conductivity and Seebeck coefficient in highly boron-doped nanocrystalline Si N Neophytou, X Zianni, H Kosina, S Frabboni, B Lorenzi, D Narducci Nanotechnology 24 (20), 205402, 2013	140	2013
Atomistic simulations of low-field mobility in Si nanowires: Influence of confinement and orientation N Neophytou, H Kosina Physical Review B 84 (8), 085313, 2011	109	2011
Engineering enhanced thermoelectric properties in zigzag graphene nanoribbons H Karamitaheri, N Neophytou, M Pourfath, R Faez, H Kosina Journal of Applied Physics 111 (5), 054501, 2012	101	2012
Ultra-low thermal conductivities in large-area Si-Ge nanomeshes for thermoelectric applications JA Perez-Taborda, M Muñoz Rojo, J Maiz, N Neophytou, ... Scientific reports 6 (1), 1-10, 2016	85	2016
Contact effects in graphene nanoribbon transistors G Liang, N Neophytou, MS Lundstrom, DE Nikonov Nano letters 8 (7), 1819-1824, 2008	83	2008
Effects of confinement and orientation on the thermoelectric power factor of silicon nanowires N Neophytou, H Kosina Physical Review B 83 (24), 245305, 2011	79	2011
On the Lorenz number of multiband materials M Thesberg, H Kosina, N Neophytou Physical Review B 95 (12), 125206, 2017	78	2017
A tight-binding study of the ballistic injection velocity for ultrathin-body SOI MOSFETs Y Liu, N Neophytou, T Low, G Klimeck, MS Lundstrom IEEE transactions on electron devices 55 (3), 866-871, 2008	67	2008
Band-structure effects on the performance of III–V ultrathin-body SOI MOSFETs Y Liu, N Neophytou, G Klimeck, MS Lundstrom IEEE transactions on electron devices 55 (5), 1116-1122, 2008	65	2008
Bandstructure effects in silicon nanowire hole transport N Neophytou, A Paul, G Klimeck IEEE transactions on nanotechnology 7 (6), 710-719, 2008	61	2008
Performance analysis of 60-nm gate-length III–V InGaAs HEMTs: Simulations versus experiments N Neophytou, T Rakshit, MS Lundstrom IEEE Transactions on Electron Devices 56 (7), 1377-1387, 2009	58	2009
Influence of defects on nanotube transistor performance N Neophytou, D Kienle, E Polizzi, MP Anantram Applied Physics Letters 88 (24), 242106, 2006	58	2006
Optimizing thermoelectric power factor by means of a potential barrier N Neophytou, H Kosina Journal of Applied Physics 114 (4), 044315, 2013	55	2013
Thermal conductivity of silicon nanomeshes: Effects of porosity and roughness S Wolf, N Neophytou, H Kosina Journal of Applied Physics 115 (20), 204306, 2014	48	2014
Large enhancement in hole velocity and mobility in p-type [110] and [111] silicon nanowires by cross section scaling: an atomistic analysis N Neophytou, H Kosina Nano letters 10 (12), 4913-4919, 2010	42	2010
Dependence of DC characteristics of CNT MOSFETs on bandstructure models SO Koswatta, N Neophytou, D Kienle, G Fiori, MS Lundstrom IEEE Transactions on Nanotechnology 5 (4), 368-372, 2006	41	2006

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