Neophytos Neophytou
Neophytos Neophytou
School of Engineering, University of Warwick
Verified email at warwick.ac.uk
Title
Cited by
Cited by
Year
Performance projections for ballistic graphene nanoribbon field-effect transistors
G Liang, N Neophytou, DE Nikonov, MS Lundstrom
IEEE Transactions on Electron Devices 54 (4), 677-682, 2007
2942007
Bandstructure effects in silicon nanowire electron transport
N Neophytou, A Paul, MS Lundstrom, G Klimeck
IEEE Transactions on Electron Devices 55 (6), 1286-1297, 2008
1862008
Ballistic graphene nanoribbon metal-oxide-semiconductor field-effect transistors: A full real-space quantum transport simulation
G Liang, N Neophytou, MS Lundstrom, DE Nikonov
Journal of Applied Physics 102 (5), 054307, 2007
1262007
Simultaneous increase in electrical conductivity and Seebeck coefficient in highly boron-doped nanocrystalline Si
N Neophytou, X Zianni, H Kosina, S Frabboni, B Lorenzi, D Narducci
Nanotechnology 24 (20), 205402, 2013
1132013
Atomistic simulations of low-field mobility in Si nanowires: Influence of confinement and orientation
N Neophytou, H Kosina
Physical Review B 84 (8), 085313, 2011
952011
Engineering enhanced thermoelectric properties in zigzag graphene nanoribbons
H Karamitaheri, N Neophytou, M Pourfath, R Faez, H Kosina
Journal of Applied Physics 111 (5), 054501, 2012
832012
Contact effects in graphene nanoribbon transistors
G Liang, N Neophytou, MS Lundstrom, DE Nikonov
Nano letters 8 (7), 1819-1824, 2008
752008
Effects of confinement and orientation on the thermoelectric power factor of silicon nanowires
N Neophytou, H Kosina
Physical Review B 83 (24), 245305, 2011
672011
Thermoelectrics: From history, a window to the future
D Beretta, N Neophytou, JM Hodges, MG Kanatzidis, D Narducci, ...
Materials Science and Engineering: R: Reports 138, 100501, 2019
642019
Ultra-low thermal conductivities in large-area Si-Ge nanomeshes for thermoelectric applications
JA Perez-Taborda, MM Rojo, J Maiz, N Neophytou, M Martin-Gonzalez
Scientific reports 6, 32778, 2016
602016
Performance analysis of 60-nm gate-length III–V InGaAs HEMTs: Simulations versus experiments
N Neophytou, T Rakshit, MS Lundstrom
IEEE Transactions on Electron Devices 56 (7), 1377-1387, 2009
582009
Band-structure effects on the performance of III–V ultrathin-body SOI MOSFETs
Y Liu, N Neophytou, G Klimeck, MS Lundstrom
IEEE transactions on electron devices 55 (5), 1116-1122, 2008
572008
A tight-binding study of the ballistic injection velocity for ultrathin-body SOI MOSFETs
Y Liu, N Neophytou, T Low, G Klimeck, MS Lundstrom
IEEE transactions on electron devices 55 (3), 866-871, 2008
572008
Influence of defects on nanotube transistor performance
N Neophytou, D Kienle, E Polizzi, MP Anantram
Applied Physics Letters 88 (24), 242106, 2006
552006
Bandstructure effects in silicon nanowire hole transport
N Neophytou, A Paul, G Klimeck
IEEE transactions on nanotechnology 7 (6), 710-719, 2008
512008
On the Lorenz number of multiband materials
M Thesberg, H Kosina, N Neophytou
Physical Review B 95 (12), 125206, 2017
482017
Dependence of DC characteristics of CNT MOSFETs on bandstructure models
SO Koswatta, N Neophytou, D Kienle, G Fiori, MS Lundstrom
IEEE Transactions on Nanotechnology 5 (4), 368-372, 2006
412006
Thermal conductivity of silicon nanomeshes: Effects of porosity and roughness
S Wolf, N Neophytou, H Kosina
Journal of Applied Physics 115 (20), 204306, 2014
392014
Optimizing thermoelectric power factor by means of a potential barrier
N Neophytou, H Kosina
Journal of Applied Physics 114 (4), 044315, 2013
392013
Large enhancement in hole velocity and mobility in p-type [110] and [111] silicon nanowires by cross section scaling: an atomistic analysis
N Neophytou, H Kosina
Nano letters 10 (12), 4913-4919, 2010
392010
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Articles 1–20