Neophytos Neophytou - Google Scholar

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Mark LundstromProfessor of Electrical and Computer Engineering, Purdue UniversityVerified email at purdue.edu
Gerhard KlimeckProfessor of Electrical and Computer Engineering, Purdue UniversityVerified email at purdue.edu
Hossein KaramitaheriUniversity of KashanVerified email at kashanu.ac.ir
Mischa ThesbergInstitute for Microelectronics, TU WienVerified email at iue.tuwien.ac.at
Dmitri E. NikonovPrincipal Engineer, IntelVerified email at intel.com
Gengchiau LiangNational University of SingaporeVerified email at nus.edu.sg
Mahdi PourfathUniversity of TehranVerified email at ut.ac.ir
Abhijeet paulGraduate Student Purdue University, Device Engineer GlobalfoundriesVerified email at globalfoundries.com
Dario NarducciDepartment of Material Science, University of Milano BicoccaVerified email at unimib.it
Samuel FosterPhD Student, University of WarwickVerified email at warwick.ac.uk
Bruno LorenziMarie Skłodowska-Curie Postdoctoral Fellow @ University of Milano BicoccaVerified email at unimib.it
Vassilios VargiamidisUniversity of WarwickVerified email at warwick.ac.uk
Marisol Martin-GonzalezProfessor & Group Leader - Micro & Nanotecnology Institute - IMN-CSICVerified email at csic.es
Laura de Sousa OliveiraUniversity of WyomingVerified email at uwyo.edu
Siegfried SelberherrInstitute for Microelectronics, TU WienVerified email at TUWien.ac.at
Mathieu LuisierETH ZurichVerified email at iis.ee.ethz.ch
Jing GuoProfessor, University of FloridaVerified email at ufl.edu
Eric PolizziProfessor, University of Massachusetts, AmherstVerified email at ecs.umass.edu
rahim faezsharif university of technologyVerified email at sharif.edu
Miguel Muñoz RojoAssistant Prof.-Tenure Track, Department of Thermal and Fluid Engineering, University of TwenteVerified email at utwente.nl

Neophytos Neophytou

School of Engineering, University of Warwick

Verified email at warwick.ac.uk

electrical engineering nanotechnology


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Performance projections for ballistic graphene nanoribbon field-effect transistors G Liang, N Neophytou, DE Nikonov, MS Lundstrom IEEE Transactions on Electron Devices 54 (4), 677-682, 2007	294	2007
Bandstructure effects in silicon nanowire electron transport N Neophytou, A Paul, MS Lundstrom, G Klimeck IEEE Transactions on Electron Devices 55 (6), 1286-1297, 2008	186	2008
Ballistic graphene nanoribbon metal-oxide-semiconductor field-effect transistors: A full real-space quantum transport simulation G Liang, N Neophytou, MS Lundstrom, DE Nikonov Journal of Applied Physics 102 (5), 054307, 2007	126	2007
Simultaneous increase in electrical conductivity and Seebeck coefficient in highly boron-doped nanocrystalline Si N Neophytou, X Zianni, H Kosina, S Frabboni, B Lorenzi, D Narducci Nanotechnology 24 (20), 205402, 2013	113	2013
Atomistic simulations of low-field mobility in Si nanowires: Influence of confinement and orientation N Neophytou, H Kosina Physical Review B 84 (8), 085313, 2011	95	2011
Engineering enhanced thermoelectric properties in zigzag graphene nanoribbons H Karamitaheri, N Neophytou, M Pourfath, R Faez, H Kosina Journal of Applied Physics 111 (5), 054501, 2012	83	2012
Contact effects in graphene nanoribbon transistors G Liang, N Neophytou, MS Lundstrom, DE Nikonov Nano letters 8 (7), 1819-1824, 2008	75	2008
Effects of confinement and orientation on the thermoelectric power factor of silicon nanowires N Neophytou, H Kosina Physical Review B 83 (24), 245305, 2011	67	2011
Thermoelectrics: From history, a window to the future D Beretta, N Neophytou, JM Hodges, MG Kanatzidis, D Narducci, ... Materials Science and Engineering: R: Reports 138, 100501, 2019	64	2019
Ultra-low thermal conductivities in large-area Si-Ge nanomeshes for thermoelectric applications JA Perez-Taborda, MM Rojo, J Maiz, N Neophytou, M Martin-Gonzalez Scientific reports 6, 32778, 2016	60	2016
Performance analysis of 60-nm gate-length III–V InGaAs HEMTs: Simulations versus experiments N Neophytou, T Rakshit, MS Lundstrom IEEE Transactions on Electron Devices 56 (7), 1377-1387, 2009	58	2009
Band-structure effects on the performance of III–V ultrathin-body SOI MOSFETs Y Liu, N Neophytou, G Klimeck, MS Lundstrom IEEE transactions on electron devices 55 (5), 1116-1122, 2008	57	2008
A tight-binding study of the ballistic injection velocity for ultrathin-body SOI MOSFETs Y Liu, N Neophytou, T Low, G Klimeck, MS Lundstrom IEEE transactions on electron devices 55 (3), 866-871, 2008	57	2008
Influence of defects on nanotube transistor performance N Neophytou, D Kienle, E Polizzi, MP Anantram Applied Physics Letters 88 (24), 242106, 2006	55	2006
Bandstructure effects in silicon nanowire hole transport N Neophytou, A Paul, G Klimeck IEEE transactions on nanotechnology 7 (6), 710-719, 2008	51	2008
On the Lorenz number of multiband materials M Thesberg, H Kosina, N Neophytou Physical Review B 95 (12), 125206, 2017	48	2017
Dependence of DC characteristics of CNT MOSFETs on bandstructure models SO Koswatta, N Neophytou, D Kienle, G Fiori, MS Lundstrom IEEE Transactions on Nanotechnology 5 (4), 368-372, 2006	41	2006
Thermal conductivity of silicon nanomeshes: Effects of porosity and roughness S Wolf, N Neophytou, H Kosina Journal of Applied Physics 115 (20), 204306, 2014	39	2014
Optimizing thermoelectric power factor by means of a potential barrier N Neophytou, H Kosina Journal of Applied Physics 114 (4), 044315, 2013	39	2013
Large enhancement in hole velocity and mobility in p-type [110] and [111] silicon nanowires by cross section scaling: an atomistic analysis N Neophytou, H Kosina Nano letters 10 (12), 4913-4919, 2010	39	2010

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