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Guangyu Liu
Guangyu Liu
KAUST, Intel, Lehigh University
Verified email at kaust.edu.sa - Homepage
Title
Cited by
Cited by
Year
Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells
H Zhao, G Liu, J Zhang, JD Poplawsky, V Dierolf, N Tansu
Optics express 19 (104), A991-A1007, 2011
6252011
20-meter underwater wireless optical communication link with 1.5 Gbps data rate
C Shen, Y Guo, HM Oubei, TK Ng, G Liu, KH Park, KT Ho, MS Alouini, ...
Optics express 24 (22), 25502-25509, 2016
3082016
High-speed colour-converting photodetector with all-inorganic CsPbBr3 perovskite nanocrystals for ultraviolet light communication
CH Kang, I Dursun, G Liu, L Sinatra, X Sun, M Kong, J Pan, P Maity, ...
Light: Science & Applications 8 (1), 94, 2019
2572019
Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes
H Zhao, G Liu, RA Arif, N Tansu
Solid-State Electronics 54 (10), 1119-1124, 2010
2322010
Nanoscale Res
LZ Liu, HL Gao, JJ Zhao, JP Lu
Lett 5, 478, 2010
209*2010
Analysis of Internal Quantum Efficiency and Current Injection Efficiency in III-Nitride Light-Emitting Diodes
H Zhao, G Liu, J Zhang, RA Arif, N Tansu
Journal of Display Technology 9 (4), 212-225, 2013
2042013
Analysis of InGaN-delta-InN quantum wells for light-emitting diodes
H Zhao, G Liu, N Tansu
Applied Physics Letters 97 (13), 2010
2002010
Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile
H Zhao, G Liu, XH Li, GS Huang, JD Poplawsky, ST Penn, V Dierolf, ...
Applied Physics Letters 95 (6), 2009
1902009
Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile
H Zhao, G Liu, XH Li, GS Huang, JD Poplawsky, ST Penn, V Dierolf, ...
Applied Physics Letters 95 (6), 2009
1892009
III-nitride photonics
N Tansu, H Zhao, G Liu, XH Li, J Zhang, H Tong, YK Ee
IEEE Photonics Journal 2 (2), 241-248, 2010
1762010
Efficiency-droop suppression by using large-bandgap AlGaInN thin barrier layers in InGaN quantum wells light-emitting diodes
G Liu, J Zhang, CK Tan, N Tansu
IEEE Photonics Journal 5 (2), 2201011, 2013
1482013
Light based underwater wireless communications
HM Oubei, C Shen, A Kammoun, E Zedini, KH Park, X Sun, G Liu, ...
Japanese Journal of applied physics 57 (8S2), 08PA06, 2018
1322018
FDTD Analysis on Extraction Efficiency of GaN Light-Emitting Diodes With Microsphere Arrays
P Zhu, G Liu, J Zhang, N Tansu
Journal of Display Technology 9 (5), 317-323, 2013
1132013
Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes
H Zhao, J Zhang, G Liu, N Tansu
Applied Physics Letters 98 (15), 2011
1132011
First-Principle Electronic Properties of Dilute-As GaNAs Alloy for Visible Light Emitters
CK Tan, J Zhang, XH Li, G Liu, BO Tayo, N Tansu
Journal of Display Technology 9 (4), 272-279, 2013
1082013
Light Extraction Efficiency Enhancement of III-Nitride Light-Emitting Diodes by Using 2-D Close-Packed TiO Microsphere Arrays
XH Li, P Zhu, G Liu, J Zhang, R Song, YK Ee, P Kumnorkaew, JF Gilchrist, ...
Journal of Display Technology 9 (5), 324-332, 2013
962013
Design and characteristics of staggered InGaN quantum-well light-emitting diodes in the green spectral regime
HP Zhao, GY Liu, XH Li, RA Arif, GS Huang, JD Poplawsky, ST Penn, ...
IET optoelectronics 3 (6), 283-295, 2009
952009
Thermoelectric properties of lattice-matched AlInN alloy grown by metal organic chemical vapor deposition
H Tong, J Zhang, G Liu, JA Herbsommer, GS Huang, N Tansu
Applied Physics Letters 97 (11), 2010
852010
Characterizations of Seebeck coefficients and thermoelectric figures of merit for AlInN alloys with various In-contents
J Zhang, H Tong, G Liu, JA Herbsommer, GS Huang, N Tansu
Journal of Applied Physics 109 (5), 2011
802011
3.2 Gigabit-per-second visible light communication link with InGaN/GaN MQW micro-photodetector
KT Ho, R Chen, G Liu, C Shen, J Holguin-Lerma, AA Al-Saggaf, TK Ng, ...
Optics express 26 (3), 3037-3045, 2018
772018
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