Giorgio Lulli
Giorgio Lulli
Senior Researcher, CNR-IMM Institute, Bologna
Verified email at bo.imm.cnr.it
TitleCited byYear
International Atomic Energy Agency intercomparison of ion beam analysis software
NP Barradas, K Arstila, G Battistig, M Bianconi, N Dytlewski, C Jeynes, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2007
902007
Radiation enhanced silicon self-diffusion and the silicon vacancy at high temperatures
H Bracht, JF Pedersen, N Zangenberg, AN Larsen, EE Haller, G Lulli, ...
Physical review letters 91 (24), 245502, 2003
762003
Solid-phase epitaxy of amorphous silicon induced by electron irradiation at room temperature
G Lulli, PG Merli, MV Antisari
Physical Review B 36 (15), 8038, 1987
761987
Ion implantation induced swelling in 6H-SiC
R Nipoti, E Albertazzi, M Bianconi, R Lotti, G Lulli, M Cervera, A Carnera
Applied physics letters 70 (25), 3425-3427, 1997
651997
Summary of “IAEA intercomparison of IBA software”
NP Barradas, K Arstila, G Battistig, M Bianconi, N Dytlewski, C Jeynes, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2008
582008
Determination of He electronic energy loss in crystalline Si by Monte-Carlo simulation of Rutherford backscattering–channeling spectra
G Lulli, E Albertazzi, M Bianconi, GG Bentini, R Nipoti, R Lotti
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2000
562000
Different methods for the determination of damage profiles in Si from RBS-channeling spectra: a comparison
E Albertazzi, M Bianconi, G Lulli, R Nipoti, M Cantiano
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1996
551996
Influence of electron-beam parameters on the radiation-induced formation of graphitic onions
G Lulli, A Parisini, G Mattei
Ultramicroscopy 60 (2), 187-194, 1995
531995
Stopping and damage parameters for Monte Carlo simulation of MeV implants in crystalline Si
G Lulli, E Albertazzi, M Bianconi, R Nipoti, M Cervera, A Carnera, ...
Journal of applied physics 82 (12), 5958-5964, 1997
421997
Low-energy recoils in crystalline silicon: Quantum simulations
M Mazzarolo, L Colombo, G Lulli, E Albertazzi
Physical Review B 63 (19), 195207, 2001
292001
Solid-phase epitaxy of implanted silicon at liquid nitrogen and room temperature induced by electron irradiation in the electron microscope
F Corticelli, G Lulli, PG Merli
Philosophical magazine letters 61 (3), 101-106, 1990
281990
The Si surface yield as a calibration standard for RBS
M Bianconi, F Abel, JC Banks, AC Font, C Cohen, BL Doyle, R Lotti, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2000
272000
Comparison of results and models of solid-phase epitaxial growth of implanted Si layers induced by electron-and ion-beam irradiation
G Lulli, PG Merli
Physical Review B 47 (21), 14023, 1993
221993
Atomistic modeling of ion channeling in Si with point defects: The role of lattice relaxation
S Balboni, E Albertazzi, M Bianconi, G Lulli
Physical Review B 66 (4), 045202, 2002
212002
On the Dynamic Annealing Mechanism in P+‐Implanted Silicon
M Berti, AV Drigo, G Lulli, PG Merli, MV Antisari
physica status solidi (a) 94 (1), 95-106, 1986
211986
MeV ion implantation induced damage in relaxed Si
A Nylandsted Larsen, C O’Raifeartaigh, RC Barklie, B Holm, F Priolo, ...
Journal of applied physics 81 (5), 2208-2218, 1997
201997
Monte Carlo simulation of ion implantation in crystalline SiC
E Albertazzi, G Lulli
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1996
181996
Solid phase epitaxy of implanted silicon by electron irradiation at room temperature
G Lulli, PG Merli, MV Antisari
MRS Online Proceedings Library Archive 100, 1988
181988
Dose rate effects on the dynamic annealing mechanism in P+ ‐implanted silicon
M Berti, AV Drigo, G Lulli, PG Merli, MV Antisari3
physica status solidi (a) 97 (1), 77-85, 1986
171986
Binary collision approximation modeling of ion-induced damage effects in crystalline 6H–SiC
G Lulli, E Albertazzi, M Bianconi, R Nipoti
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1999
161999
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