| Localized charge carriers in graphene nanodevices D Bischoff, A Varlet, P Simonet, M Eich, HC Overweg, T Ihn, K Ensslin Applied Physics Reviews 2 (3), 2015 | 110 | 2015 |
| Fabry-Pérot interference in gapped bilayer graphene with broken anti-Klein tunneling A Varlet, MH Liu, V Krueckl, D Bischoff, P Simonet, K Watanabe, ... Physical review letters 113 (11), 116601, 2014 | 103 | 2014 |
| Anomalous sequence of quantum Hall liquids revealing a tunable Lifshitz transition in bilayer graphene A Varlet, D Bischoff, P Simonet, K Watanabe, T Taniguchi, T Ihn, K Ensslin, ... Physical review letters 113 (11), 116602, 2014 | 93 | 2014 |
| Raman spectroscopy on etched graphene nanoribbons D Bischoff, J Güttinger, S Dröscher, T Ihn, K Ensslin, C Stampfer Journal of Applied Physics 109 (7), 2011 | 81 | 2011 |
| Measurement back-action in stacked graphene quantum dots D Bischoff, M Eich, O Zilberberg, C Rössler, T Ihn, K Ensslin Nano letters 15 (9), 6003-6008, 2015 | 58 | 2015 |
| Characterizing wave functions in graphene nanodevices: Electronic transport through ultrashort graphene constrictions on a boron nitride substrate D Bischoff, F Libisch, J Burgdörfer, T Ihn, K Ensslin Physical Review B 90 (11), 115405, 2014 | 57 | 2014 |
| Reactive-ion-etched graphene nanoribbons on a hexagonal boron nitride substrate D Bischoff, T Krähenmann, S Dröscher, MA Gruner, C Barraud, T Ihn, ... Applied Physics Letters 101 (20), 2012 | 57 | 2012 |
| Ultrasmooth metallic foils for growth of high quality graphene by chemical vapor deposition P Procházka, J Mach, D Bischoff, Z Lišková, P Dvořák, M Vaňatka, ... Nanotechnology 25 (18), 185601, 2014 | 56 | 2014 |
| Tunable Fermi surface topology and Lifshitz transition in bilayer graphene A Varlet, M Mucha-Kruczyński, D Bischoff, P Simonet, T Taniguchi, ... Synthetic Metals 210, 19-31, 2015 | 44 | 2015 |
| Scanning gate microscopy on a graphene nanoribbon N Pascher, D Bischoff, T Ihn, K Ensslin Applied Physics Letters 101 (6), 2012 | 40 | 2012 |
| Fast detection of single-charge tunneling to a graphene quantum dot in a multi-level regime T Müller, J Güttinger, D Bischoff, S Hellmüller, K Ensslin, T Ihn Applied physics letters 101 (1), 2012 | 35 | 2012 |
| Band gap and broken chirality in single‐layer and bilayer graphene A Varlet, MH Liu, D Bischoff, P Simonet, T Taniguchi, K Watanabe, ... physica status solidi (RRL)–Rapid Research Letters 10 (1), 46-57, 2016 | 27 | 2016 |
| Electronic triple-dot transport through a bilayer graphene island with ultrasmall constrictions D Bischoff, A Varlet, P Simonet, T Ihn, K Ensslin New Journal of Physics 15 (8), 083029, 2013 | 25 | 2013 |
| Graphene nanoribbons: relevance of etching process P Simonet, D Bischoff, A Moser, T Ihn, K Ensslin Journal of Applied Physics 117 (18), 2015 | 21 | 2015 |
| Graphene nano-heterostructures for quantum devices D Bischoff, M Eich, A Varlet, P Simonet, HC Overweg, K Ensslin, T Ihn Materials Today 19 (7), 375-381, 2016 | 18 | 2016 |
| Measuring the local quantum capacitance of graphene using a strongly coupled graphene nanoribbon D Bischoff, M Eich, A Varlet, P Simonet, T Ihn, K Ensslin Physical Review B 91 (11), 115441, 2015 | 16 | 2015 |
| The importance of edges in reactive ion etched graphene nanodevices D Bischoff, P Simonet, A Varlet, HC Overweg, M Eich, T Ihn, K Ensslin physica status solidi (RRL)–Rapid Research Letters 10 (1), 68-74, 2016 | 14 | 2016 |
| Wavelength multiplexing: WDM and DWDM systems D Bischoff Essay, February 4, 2009 | 7 | 2009 |
| Noise Variance Estimation for MIMO-OFDM Testbed D Bischoff Department of Information and Electrical Engineering, ETH, Zurich Winter Session, 2008 | 6* | 2008 |
| Graphene nanoribbons with wings D Bischoff, M Eich, F Libisch, T Ihn, K Ensslin Applied Physics Letters 107 (20), 2015 | 3 | 2015 |
